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姓名 李孟勳(Meng-syun Li) 查詢紙本館藏 畢業系所 電機工程學系 論文名稱 梯形網格之矩形轉換與圓柱型MOSFET應用
(Rectangular Transform of Trapezoidal Mesh and Its Application to Cylindrical MOSFETs)相關論文 檔案 [Endnote RIS 格式]
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摘要(中) 在這篇論文中,我們利用圓柱座標轉換,將原本使用的矩形網格轉換成梯形網格,由於使用梯形網格分析圓弧接面相較於使用矩形網格來的精準迅速,所以我們採用梯形網格為基礎,進行pn二極體的模擬。接著,使用梯形網格模擬一般接面二極體,並且找出與使用矩形網格模擬得到的特性符合的條件。然後使用這個梯形網格去模擬gate all around MOSFET,探討半徑對於臨限電壓的影響,最後將模擬值與一般矩形理論公式的臨限電壓做個比較。
摘要(英) In this thesis, we use the trapezoidal elements in cylindrical coordinate system because the trapezoidal elements is fast and symmetric. We use the trapezoidal elements to analyze and simulate the circular pn junction. First, we simulate the circular pn junction by trapezoidal elements, and find out the conditions to make the trapezoidal elements have the capability to obtain the same result with the rectangular elements. Then, we simulate the gate all around MOSFET by trapezoidal elements to discuss the relation between the radius and the threshold voltage. Finally, we compare the simulated value and the rectangular formula of threshold voltage.
關鍵字(中) ★ 圓柱座標
★ 梯形網格
★ 臨限電壓關鍵字(英) ★ Cylindrical
★ MOSFET
★ Trapezoidal論文目次 摘要 i
Abstract ii
目錄 iii
圖目錄 iv
表目錄 vi
第一章 簡介 1
第二章 矩形網格與梯形網格之比較 3
2-1. 直角坐標下矩形網格的分析 3
2-2. 梯形網格結構定義 7
第三章 梯形網格變形為矩形網格之探討 13
3-1. 原點挖空應用於二極體 13
3-2. 挖空半徑與角度的討論 17
3-3. 梯形網格二極體與矩形網格二極體之比較 20
第四章 梯形網路應用於二維圓柱MOSFET 25
4-1 圓柱型MOSFET的結構 25
4-2 半徑與臨限電壓的關係 27
第五章 結論 37
參考文獻 39
參考文獻 [1] Y. S. Tso, "Analysis and simulation cylindrical coordinates of curved PN junction properties," Electrical Engineering Natl. Central Univ, Chung-Li city, Taiwan, R.O.C., 2010.
[2] D. K.Cheng, Field and wave electromagnetics, 2nd ed.: Addison-Wesley Publishing Company , Inc., 1989.
[3] J. Y. Peng, "Current Characteristic and Electric-field Analysis in 2-D SOI Semiconductor Devise Simulation," Electrical Engineering Natl. Central Univ, Chung-Li city, Taiwan, R.O.C., 2008.
[4] D. A. Neamen, Semiconductor physics and devices 3rd ed.: McGraw-Hill Companies, 2003.
[5] J. He, et al., "Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET," Solid-State Electronics, vol. 54, pp. 806-808, Aug 2010.
[6] J. He, et al., "Equivalent function transformation: a semi-empirical analytical method for predicting the breakdown characteristics of cylindrical- and spherical-abrupt PN junctions," Solid-State Electronics, vol. 44, pp. 2171-2176, Dec 2000.
[7] B. Iniguez, et al., "Two-dimensional analytical threshold voltage roll-off and subthreshold swing models for undoped cylindrical gate all around MOSFET," Solid-State Electronics, vol. 50, pp. 805-812, May 2006.
[8] K. Castellani-Coulie, et al., "Investigation of 30 nm gate-all-around MOSFET sensitivity to heavy ions: A 3-D simulation study," Ieee Transactions on Nuclear Science, vol. 53, pp. 1950-1958, Aug 2006.
[9] S. M. Sze, Physics of Semiconductor Devices: John Wiley & Sons Inc., 2006.
[10] H. C. Casey, Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors: John Wiley & Sons, , 1998.
指導教授 蔡曜聰(Yao-Tsung Tsai) 審核日期 2011-7-5 推文 plurk
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