高功率高效率放大器與振盪器研製

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姓名

李文賓(Wen-Ping Li) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

高功率高效率放大器與振盪器研製
(Design of High Power and High Efficiency Power Amplifier and Power Oscillator)

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摘要(中)

本論文主要討論運用於微波高功率高效率放大器及振盪器設計，使用橫向擴散金氧半場效應電晶體(LDMOS)元件及0.15 µm假晶式高速電子遷移率電晶體(PHEMT) 積體電路製程來實現。高功率電路最主要設計重點在於它的效率，如果效率低，將會產生過多的熱能使得系統溫度過高及消耗額外的直流功率，E類功率放大器的設計公式已經相當成熟，擁有高效率及架構簡單的優點，相當適合用於高功率高效率放大器及振盪器電路設計。
第一章為整篇論文之緒論，討論高功率高效率電路的發展現況及電晶體製作技術發展，第二章利用E類功率放大器設計公式製作應用於100 MHz之10與150 W功率放大器設計，其效率可達75%以上。第三章則進一步結合E類功率放大器的設計方法並結合回授網路，實現出高功率高效率之100 MHz 150及 300 W之功率振盪器，效率最高可達83%，距載波中心頻率(Offset Frequency)10 kHz，其相位雜訊分別可達-113.4 及-117.21 dBc/Hz。第四章則進一步利用放大器結合回授網路設計方法製作出全積體化高功率高效率功率振盪器，並利用於0.15 µm假晶式高速電子遷移率電晶體 (PHEMT) 製程設計出2.4及24 GHz之功率振盪器，2.4 GHz振盪器最大射頻功率輸出可達約27 dBm，最大效率可達48%，24 GHz振盪器最大效率可達23 dBm效率達15%。

摘要(英)

This thesis emphasizes on high power high efficiency power amplifiers and power oscillators for microwave and millimeter-wave (MMW) applications. The circuits are designed and fabricated using laterally diffused metal oxide semiconductor (LDMOS) transistors and a 0.15 µm PHEMT technology. The dc-to-RF efficiency is an important specification for the high power circuits. If the efficiency is not high enough, the heating and dc power consumption both increase. The design equation of the class-E power amplifier is reliable. The class-E topology is appropriate for the high power high efficiency power amplifier and power oscillator because it has high efficiency characteristic and simple topology.
An introduction for the development of high power high efficiency circuits and transistor technologies are given in Chapter 1. In Chapter 2, using the class-E topology is adopted to design a 10 W and a 150 W power amplifiers at 100 MHz. The power amplifiers exhibit a maximum efficiency of higher than 75%. In Chapter 3, 100 MHz 150 and 300 W power oscillators have been presented by combining the topology of the class-E power amplifier structure and the feedback networks. The power oscillators exhibit a peak efficiency of 83%. The phase noises at 10 kHz offset of the 150 and 300-W power oscillators are -113.4 and -117.2 dBc/Hz, respectively. In Chapter 4, 2.4 and 24-GHz power oscillators are designed using a 0.15 µm PHEMT technology. The 2.4 GHz power oscillator achieves a maximum output power of 27 dBm and a maximum efficiency 52%. The 24-GHz power oscillator achieves a maximum output power of 23 dBm and a maximum efficiency 15%.

關鍵字(中)

★ E類功率放大器
★ LDMOS
★ 高功率高效率振盪器與放大器

關鍵字(英)

★ LDMOS
★ high power high efficiency oscillator and ampl
★ class E power amplifier

論文目次

摘要 I
Abstract II
致謝 III
目錄 V
圖目錄 VII
表目錄 XII
第一章緒論 1
1.1研究動機及背景 1
1.2相關研究與發展 1
1.3論文架構 2
第二章高功率高效率功率放大器 4
2.1 簡介 4
2.2功率電晶體的現況 4
2.3 E類功率放大器原理 6
2.4 100 MHz 10 W功率放大器研製 10
2.4.1介紹 10
2.4.2電路設計 10
2.4.3 100 MHz 10 W的功率放大器模擬與量測結果 12
2.5 100 MHz 150 W功率放大器研製 15
2.5.1介紹 15
2.4.2 100 MHz 150 W的功率放大器模擬與量測結果 17
2.6 結論 23
第三章混成式電路高功率與高效率振盪器 25
3.1簡介 25
3.2 100 MHz 150 W高功率高效率振盪器研製 27
3.2.1介紹 27
3.2.2 100 MHz 150 W的功率振盪器電路設計 27
3.2.3 100 MHz 150 W的功率振盪器模擬與量測結果 39
3.3 100 MHz 300 W高功率高效率振盪器研製 46
3.3.1介紹 46
3.3.2 100 MHz 300 W的功率振盪器電路設計 47
3.3.3 100 MHz 300 W的功率振盪器模擬與量測結果 53
3.4 結論 60
第四章單晶微波積體電路高功率與高效率振盪器 61
4.1簡介 61
4.2 2.4 GHz高功率高效率振盪器研製 62
4.2.1介紹 62
4.2.2 2.4 GHz功率振盪器電路設計 62
4.2.3 2.4 GHz功率振盪器模擬與量測結果 69
4.2.4 實驗結果討論 75
4.3 24 GHz高功率高效率振盪器研製 77
4.3.1介紹 77
4.3.2 24 GHz功率振盪器電路設計 77
4.3.3 24 GHz功率振盪器模擬與量測結果 80
4.3.4 實驗結果討論 86
4.4 使用穩懋E/D-mode製作之高功率高效率功率振盪器 88
4.4.1介紹 88
4.4.2 使用穩懋E/D-mode製作之功率振盪器模擬與量測結果 89
4.4.3實驗結果討論 93
4.5 結論 94
第五章結論 95
參考文獻 97
附錄一各個電路的元件參考值 102

參考文獻

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指導教授

張鴻埜(Hong-Yeh Chang)

審核日期

2011-8-28

推文