|| Quay, R.; Tessmann, A.; Kiefer, R.; Maroldt, S.; Haupt, C.; Nowotny, U.; Weber, R.; Massler, H.; Schwantuschke, D.; Seelmann-Eggebert, M.; Leuther, A.; Mikulla, M.; Ambacher, O., “Dual-Gate GaN MMICs for MM-Wave Operation,” IEEE|
Microwave and Wireless Components Letters, Vol. 21, No. 2, February 2011.
 Narasimhamurthy, K.C.; Paily, R.; "Performance Comparison of Single- and Dual-Gate Carbon-Nanotube Thin-Film Field-Effect Transistors," IEEE Transactions on Electron Devices, Vol. 58, No. 7, July 2011.
 Hong-Yeh Chang; Kung-Hao Liang; "A 0.18 um Dual-Gate CMOS Device Modeling and Applications for RF Cascode Circuits," IEEE TRANSACTIONS ON Microwave Theory and Techniques, Vol. 59, No. 1, January 2011.
 Fujimoto, R.; Kojima, K.; Otaka, S.; "A 7-GHz 1.8-dB NF CMOS Low-Noise Amplifier," IEEE Journal of Solid-State Circuits, Vol. 37, No. 7, July 2002.
 林昀; "電子學" 鼎茂出版 2003.
 Behzad Razavi; "Design of Analog CMOS Integrated Circuits," McGraw-Hill, International Edition 2001.
 Bouhana, E.; Scheer, P.; Boret, S.; Gloria, D.; Dambrine, G.; Minondo, M.; Jaouen, H.; "Analysis and modeling of substrate impedance network in RF CMOS," IEEE
International Conference on Microelectronic Test Structures, 2006.
 F. Curp. Srinivasan, P. Magnone, E. Simoen, C. Pace, D. Misra, and C. Claeys, "Impact of Interfacial Layer on the Low-Frequency Noise(1/f) Behavior of MOSFETs With Advanced Gate Stacks," IEEE Electron Device Letters, Vol. 27, NO. 8, August, 2006.
 M. G. Peters and J. I. Dijkhuis, "Random telegraph signals and 1/f noise in a silicon quantum dot," Journal of Applied Physics, Vol. 86, NO. 3, August, 1999.
 Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, and Tadahior Ohmi, "Relation Between the Mobility, 1/f Noise, and Channel Direction in MOSFETs Fabricated on (100) and (110) Silicon-Oriented Wafers," IEEE Transactions on
Electron Devices, Vol. 57, NO.7, July, 2010.
 Ostling, Mikael .et all .“Low-frequency Noise in Advanced MOS Devices”, springer, 2007
 Kwok K Hung, Ping K.Ko, Chen ming Hu, Yiu C.Cheng.“A Unified Model for the Flicker Noise in Metal Oxide-Semiconductor Field- Effect Transistors”, IEEE Transaction on Electron Device, VOL. 37, pp. 654-665, 1900
 Maisurah, S.; Wong Sew Kin; Kung, F.; See Jin Hui; "0.18 μ m CMOS Low Noise Amplifier for 3-5GHz Ultra-Wideband System," International Symposium on Integrated Circuits, 2007.
 Lu Huang; Lisong Feng; Fujiang Lin; "A 0.18 μm CMOS 3–5GHz switched gain low noise amplifier for UWB system," IEEE International Symposium on Radio-Frequency Integration Technology, 2009.
 Meaamar, A.; Boon Chirn Chye; Do Man Anh; Yeo Kiat Seng; "A 3–8 GHz Low-Noise CMOS Amplifier," IEEE Microwave and Wireless Components Letters, Vol. 19, No. 4, April 2009.
 Sapone, G.; Palmisano, G.; "A 3–10-GHz Low-Power CMOS Low-Noise Amplifier for UWB Communication," IEEE Transactions on Microwave Theory and Techniques, Vol. 59, No. 3, March 2011.
 Bonghyuk Park; Seungsik Lee; Sangsung Choi; Songcheol Hong; "A 12-GHz Fully Integrated Cascode CMOS LC VCO With Q-Enhancement Circuit," IEEE Microwave and Wireless Components Letters, Vol. 18, No. 2, February 2008.
 Siprak, D.; Tiebout, M.; Zanolla, N.; Baumgartner, P.; Fiegna, C.; "Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias," IEEE Journal of Solid-State Circuits, Vol. 44, No. 7, July 2009
 Jonghae Kim; Plouchart, J.-O.; Zamdmer, N.; Trzcinski, R.; Kun Wu; Gross, B.J.; Moon Kim; "A 44GHz differentially tuned VCO with 4GHz tuning range in 0.12 μm SOI CMOS," IEEE International Solid-State Circuits Conference, 2005.
 Donghyun Baek; Taeksang Song; Euisik Yoon; Songcheol Hong; "8-GHz CMOS quadrature VCO using transformer-based LC tank," IEEE Microwave and Wireless Components Letters, Vol. 13, No. 10, October 2003
 Sangsoo Ko; Jeong-Geun Kim; Taeksang Song; Euisik Yoon; Songcheol Hong; "20 GHz integrated CMOS frequency sources with a quadrature VCO using transformers," IEEE Radio Frequency Integrated Circuits Symposium, 2004.
 Nam-Jin Oh; Sang-Gug Lee; "11-GHz CMOS differential VCO with back-gate transformer feedback," IEEE Microwave and Wireless Components Letters, Vol. 15, No. 11, November 2005.
 C. W. Kuo, C. C. Hsiao, C. C. Ho, and Y. J. Chan, “Scalable large-signal model of 0.18 μm CMOS process for RF power predictions,”Solid State Electron., vol. 47, pp. 77–81, 2002.