以反應性射頻磁控濺鍍搭配HMDSO電漿聚合鍍製氧化矽摻碳薄膜阻障層之研究

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魏敬倫(Chin-Lun Wei) 查詢紙本館藏

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光電科學與工程學系

論文名稱

以反應性射頻磁控濺鍍搭配HMDSO電漿聚合鍍製氧化矽摻碳薄膜阻障層之研究
(Investigation of SiOx:C barrier films deposited by RF reactive magnetron sputtering coupled with HMDSO/O2 plasma polymerization)

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摘要(中)

軟性電子產業於近期內崛起，其輕薄、可撓可攜、大面積之優點使其被廣泛應用於顯示器、照明、能源及生醫等領域中，並在未來十年內大幅改變人類生活型態。然而，當有機軟性元件被製作於塑膠基板上，許多材料及製程上的挑戰臨到。其中，有機半導體對水氣、氧氣十分敏感，其電性受氣體影響而迅速衰退，此乃可撓式有機發光二極體難以順利發展的原因之一。為提升有機元件壽命，製備極低水氣穿透率(WVTR)(<10^-6 g/m^2/day)及柔軟性佳之薄膜阻障層為首要之務。本研究使用射頻磁控濺鍍搭配有機單體HMDSO於PET基板上沉積氧化矽摻碳薄膜阻障層。磁控濺鍍槍、矽靶材及通入之氬氣、氧氣在2*10^-2 torr腔體壓力下以高密度電漿進行濺鍍，同時打斷HMDSO單體鍵結，與其共同反應聚合沉積高緻密性薄膜。一般HMDSO電漿聚合製程中，薄膜內籠狀矽氧結構多於線狀矽氧結構；而本鍍膜系統中，矽靶逸出之矽原子少數與氧結合，多數與碳結合，形成較多線狀結構，因而沉積出孔洞性少且化學性質接近聚合物之薄膜。實驗以100W射頻能量、10sccm氧氣、30sccm氬氣及4sccm HMDSO成功鍍製一緻密性高、孔洞性低、光穿透率高於90%、膜厚50nm的薄膜阻障層，其水氣穿透率可達7.6*10^-2 g/m^2/day，約為目前以HMDSO製備氧化矽單層膜之WVTR最佳值0.3 g/m^2/day 的1/4。相信未來可用此有機無機材料混合方式沉積氧化矽多層膜，並符合有機元件阻水及可撓需求，以應用於OLED封裝產業。

摘要(英)

The recent rise of flexible electronics industry aiming to deliver lightweight, flexible, portable and large-area products has been extensively applied in the fields of display, lighting and biomedical engineering and will be the next-generation lifestyle-changing electronic devices. However, many material and process-related challenges appear when flexible organic components are fabricated on polymer substrate. Among the challenges, moisture permeation could degrade and reduce the performance and durability of organic flexible organic light-emitting diode (OLED), making it difficult to be developed. In order to achieve OELD’s lifetime of thousands of hours, water vapor transmittance rate (WVTR) must be below <10^-6 g/m^2/day. In this study, magnetron sputtering and hexamethyldisiloxane (HMDSO) were used to deposit SiO2:C barrier film on PET substrate. In high-density plasma produced by magnetron sputtering gun, oxygen, silicon atoms and fragmented HMDSO were mixed together under 2*10^-3 torr to deposit dense films. During PECVD process, there were more cage silicon-oxide structures than linear silicon-oxide structures. By contraries, in our system, most escaping silicon atoms from target connected with carbon atoms instead of oxygen atoms, resulting in a polymer-like film with large amount of linear structure. 100 W RF power, 10sccm O2, 30sccm Ar and 4 sccm HMDSO were applied to deposit a 50-nm-thick film with low porosity and high transmittance above 90%. WVTR of the film reached the value of 7.6*10^-2 g/m^2/day, which is 4 times lower than the best WVTR value, 0.3 g/m^2/day, of films deposited by PECVD-HMDSO system. It is believed that by combining organic and inorganic process, multilayer could meet OLED barrier requirement and will be used in OLED encapsulation industry in future.

關鍵字(中)

★ 射頻磁控濺鍍
★ 電漿聚合
★ HMDSO
★ 薄膜阻障層
★ 氧化矽
★ 軟性電子

關鍵字(英)

★ Reactive magnetron sputtering
★ Plasma Polymerization
★ HMDSO
★ Barrier films
★ Silicon oxide
★ Flexible electronics

論文目次

摘要......................I

Abstract................II

致謝....................III

總目錄....................V

圖目錄.................VIII

表目錄...................XI

第一章緒論...............1

1-1 前言.................1

1-2 研究內容..............4

第二章基礎理論與文獻回顧....6

2-1 反應性磁控濺鍍法........6

2-1-1 電漿基本原理.........6

2-1-2 濺鍍原理............8

2-1-3 磁控濺鍍...........13

2-1-4 反應性濺鍍..........14

2-2 電漿輔助化學氣相沉積.....15

2-2-1 電漿聚合............15

2-2-2 HMDSO碎裂反應.......18

2-3 氣體阻障層..............21

2-3-1 氣體穿透理論..........21

2-3-2 氣體阻障層製備與方法回顧.30

第三章實驗方法與儀器原理.......37

3-1 實驗方法.................37

3-1-1 實驗流程..............37

3-1-2 鍍膜設備..............38

3-1-3 實驗步驟..............42

3-2 量測儀器原理..............44

3-2-1 可見光近紅外光光譜儀.....44

3-2-2 掃描式電子顯微鏡........45

3-2-3 傅立葉轉換紅外線光譜儀...46

3-2-4 X射線光電子能譜儀.......47

3-2-5 Mocon水氣透過率量測儀...48

第四章結果與討論..............51

4-1 以矽靶材濺鍍搭配不同流量之HMDSO製備SiOx:C薄膜.....51

4-1-1 鍍率與光學穿透率分析.........................53

4-1-2 FTIR分析..................................56

4-1-3 XPS分析原子百分比及碳矽鍵結比例分析............63

4-2 以鈦靶材濺鍍搭配不同流量之HMDSO製備TiOx:C薄膜......72

4-2-1 光學穿透率分析..............................72

4-2-2 FTIR分析..................................72

4-2-3 XPS分析原子百分比及有機無機比例分析............74

4-3 於PET基材上鍍製氣體阻障層SiOx:C薄膜..............80

4-3-1 光學穿透率分析..............................80

4-3-2 不同HMDSO流量摻雜對水氣透過率(WVTR)之影響......82

4-3-3 不同膜厚對水氣穿透率(WVTR)之影響..............86

第五章結論.......................................89

參考文獻...........................................91

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指導教授

李正中、郭倩丞
(Cheng-Chung Lee、Chien-Cheng Kuo)

審核日期

2012-10-8

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