| 摘要(英) |
The guided-wave silicon optical bench (GW-SiOB) with inertial sensing element is proposed in this thesis. The working principle of the module as below: the external inertial force causes the membrane of inertial sensing element with vibration, and this vibration let the mass element, which is on the membrane, with relative vibration displacement. The relative vibration displacement of mass element lets optical waveguide with variation optical flux, and the optical flux of waveguide is monitored by silicon optical bench to analyze the external inertial force.
The polymer material is utilized to fabricate the waveguide with air trench on GW-SiOB, and the mass element of silicon based inertial sensing element is inserted into the air trench. The silicon based inertial sensing element and GW-SiOB are fabricated by semiconductor process, and the flip-chip assembly is used to assemble the silicon based inertial sensing element, vertical-cavity surface-emitting Laser (VCSEL), and photodiode (PD) on the GW-SiOB. An optical inertial sensing module achieved is through above process.
The PD of optical inertial sensing module without inertial sensing element received the optical current of 0.12 mA and the optical coupling efficiency of the module with -9.49 dB. The assembly insertion loss of inertial sensing element is -2.18 dB, and compared to simulation result of -1.99 dB with error value in 9%.
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| 參考文獻 |
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