參考文獻 |
[1] Y. Nishi, "Challenges and opportunities for future non-volatile memory technology", Current Applied Physics, vol. 11, pp. E101-E103, Mar 2011.
[2] J.-M. Sallese, "Principles of the 1T Dynamic Access Memory Concept on SOI", MOS Modeling and Parameter Extraction Group Meeting, 2007.
[3] 余昭倫, "綜觀新時代記憶體-相變化記憶體," 2006.
[4] 葉林秀、李佳謀、徐明豐等, "磁阻式隨機存取記憶體技術的發展─現在與未來," 物理雙月刊 廿六卷四期, 2004.
[5] 呂正傑、詹世雄, "鐵電記憶體簡介," NDL 奈米通訊, vol. 第五卷第四期.
[6] R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges", Advanced Materials, vol. 21, pp. 2632-+, Jul 13 2009.
[7] J. Van Houdt, "Charge-based nonvolatile memory: Near the end of the roadmap? ", Current Applied Physics, vol. 11, pp. e21-e24, 2011.
[8] B. Gao, L. Liu, X. Liu, and J. Kang, "Resistive switching characteristics in HfOx layer by using current sweep mode", Microelectronic Engineering, vol. 94, pp. 14-17, 2012.
[9] B. Chen, B. Gao, S. W. Sheng, L. F. Liu, X. Y. Liu, Y. S. Chen, Y. Wang, R. Q. Han, B. Yu, and J. F. Kang ",A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors," Electron Device Letters, IEEE, vol. 32, pp. 282-284, 2011.
[10] R. Waser and M. Aono, "Nanoionics-based resistive switching memories", Nat Mater, vol. 6, pp. 833-840, 2007.
[11] Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, P. C. Chiang, W. S. Chen, F. T. Chen, C. H. Lien, and M. J. Tsai, "Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity", in Electron Devices Meeting (IEDM), 2009 IEEE International, 2009, pp. 1-4.
[12] Y. Hirose and H. Hirose, "Polarity-Dependent Memory Switching and Behavior of Ag Dendrite in Ag-Photodoped Amorphous As2S3 Films", Journal of Applied Physics, vol. 47, pp. 2767-2772, 1976.
[13] N. Raghavan, K. L. Pey, W. Liu, X. Wu, X. Li, and M. Bosman, "Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM", Microelectronic Engineering, vol. 88, pp. 1124-1128, 2011.
[14] R. Bez and A. Pirovano, "Non-volatile memory technologies: emerging concepts and new materials", Materials Science in Semiconductor Processing, vol. 7, pp. 349-355, Aug-Dec 2004.
[15] T. Baiatu, R. Waser, and K.-H. Härdtl, "dc Electrical Degradation of Perovskite-Type Titanates: III, A Model of the Mechanism", Journal of the American Ceramic Society, vol. 73, pp. 1663-1673, 1990.
[16] J. Park, S. Jung, J. Lee, W. Lee, S. Kim, J. Shin, and H. Hwang, "Resistive switching characteristics of ultra-thin TiOx", Microelectronic Engineering, vol. 88, pp. 1136-1139, 2011.
[17] R. Hallock, "The hows and whys of SSDs", tech-articles, 2008
[18] M. J. Lee, C. B. Lee, S. Kim, H. Yin, J. Park, S. E. Ahn, B. S. Kang, K. H. Kim, G. Stefanovich, I. Song, S. W. Kim, J. H. Lee, S. J. Chung, Y. H. Kim, C. S. Lee, J. B. Park, I. G. Baek, C. J. Kim, and Y. Park, "Stack Friendly All-Oxide 3D RRAM using GaInZnO Peripheral TFT realized over Glass Substrates", Ieee International Electron Devices Meeting 2008, Technical Digest, pp. 85-88, 2008.
[19] H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M. J. Tsai, "Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM", in Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 2008, pp. 1-4.
[20] V. Jousseaume, A. Fantini, J. F. Nodin, C. Guedj, A. Persico, J. Buckley, S. Tirano, P. Lorenzi, R. Vignon, H. Feldis, S. Minoret, H. Grampeix, A. Roule, S. Favier, E. Martinez, P. Calka, N. Rochat, G. Auvert, J. P. Barnes, P. Gonon, C. Vallée, L. Perniola, and B. De Salvo, "Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs", Solid-State Electronics, vol. 58, pp. 62-67, 2011.
[21] A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, "Reproducible switching effect in thin oxide films for memory applications", Applied Physics Letters, vol. 77, pp. 139-141, 2000.
[22] R. Waser, "Resistive non-volatile memory devices ", Microelectronic Engineering, vol. 86, pp. 1925-1928, 2009.
[23] 柯志忠, "以原子層沉積製程成長氧化物薄膜與金屬奈米顆粒及其應用"
[24] K. L. Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, and W. H. Lin, "Dielectric breakdown induced epitaxy in ultrathin gate oxide - a reliability concern", in Electron Devices Meeting, 2002. IEDM ’’02. International, 2002, pp. 163-166.
[25] C. H. Tung, K. L. Pey, W. H. Lin, and M. K. Radhakrishnan, "Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs", Electron Device Letters, IEEE, vol. 23, pp. 526-528, 2002.
[26] H. Zhang, L. Liu, B. Gao, Y. Qiu, X. Liu, J. Lu, R. Han, J. Kang, and B. Yu, "Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach", Applied Physics Letters, vol. 98, pp. 042105-042105-3, 2011.
[27] B. Gao, H. W. Zhang, S. Yu, B. Sun, L. F. Liu, X. Y. Liu, Y. Wang, R. Q. Han, J. F. Kang, B. Yu, and Y. Y. Wang, "Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology", in VLSI Technology, 2009 Symposium on, 2009, pp. 30-31.
[28] T. A. L. Selvarajoo, R. Ranjan, P. Kin-Leong, T. Lei-Jun, T. Chih Hang, and L. Wenhe, "Dielectric-breakdown-induced epitaxy: a universal breakdown defect in ultrathin gate dielectrics", Device and Materials Reliability, IEEE Transactions on, vol. 5, pp. 190-197, 2005.
[29] L. Goux, J. G. Lisoni, W. Xin Peng, M. Jurczak, and D. J. Wouters, "Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells", Electron Devices, IEEE Transactions on, vol. 56, pp. 2363-2368, 2009.
[30] H. ChiaHua, H. Cho-Lun, C. Chun-Chi, L. Jan-Tsai, W. Cheng-San, H. Chien-Chao, H. Chenming, and Y. Fu-Liang, "9nm half-pitch functional resistive memory cell with A programming current using thermally oxidized sub-stoichiometric WOx film", in Electron Devices Meeting (IEDM), 2010 IEEE International, 2010, pp. 19.1.1-19.1.4.
[31] T. Yuan Heng, H. Chia-En, C. H. Kuo, Y. D. Chih, and L. Chrong Jung, "High density and ultra small cell size of Contact ReRAM (CR-RAM) in 90nm CMOS logic technology and circuits", in Electron Devices Meeting (IEDM), 2009 IEEE International, 2009, pp. 1-4.
[32] D. S. Jeong, H. Schroeder, and R. Waser, "Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt/TiO2/Pt Stack", Electrochemical and Solid-State Letters, vol. 10, pp. G51-G53, 2007.
[33] S. Lee, H. Kim, J. Park, and K. Yong, "Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films", Journal of Applied Physics, vol. 108, pp. 076101-3, 2010.
[34] K.-L. Lin, T.-H. Hou, J. Shieh, J.-H. Lin, C.-T. Chou, and Y.-J. Lee, "Electrode dependence of filament formation in HfO2 resistive-switching memory", Journal of Applied Physics, vol. 109, pp. 084104-7, 2011.
[35] T.-H. Hou, K.-L. Lin, J. Shieh, J.-H. Lin, C.-T. Chou, and Y.-J. Lee, "Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory", Applied Physics Letters, vol. 98, pp. 103511-103511-3, 2011.
|