以化學浴沉積法製備不同結構氧化鋅光電極薄膜之研究

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葉嘉珉(Chia-min Yeh) 查詢紙本館藏

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論文名稱

以化學浴沉積法製備不同結構氧化鋅光電極薄膜之研究
(The fabrication of Zinc Oxide photoelectrode thin film with different structures by chemical bath deposition)

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摘要(中)

本研究利用化學水浴沉積法於ITO導電玻璃上製備氧化鋅薄膜，應用於光電化學產氫系統中做為光電極；藉由改變錯合劑種類與濃度，製備出不同形貌的氧化鋅薄膜，比較各種形貌之薄膜光吸收及光電特性表現後，接著進一步討論沉積溫度、沉積層數及熱處理溫度等製程參數對薄膜所造成的影響，同時也逐步提升薄膜之光電特性表現。
實驗中發現，不同錯合劑種類與濃度會生成不同的氧化鋅結晶形貌，當錯合劑為氨水，濃度0.4M及0.8M為顆粒狀結構，而濃度1.2M及1.6M則為花瓣狀結構；錯合劑改為六亞甲基四胺皆呈現六角柱狀結構，而錯合劑使用三乙醇胺則為顆粒狀結構，比較後發現錯合劑為濃度4%之三乙醇胺所製備出的顆粒狀薄膜有較佳的光吸收及光電特性。接著逐步改變鍍浴溫度、鍍膜層數與熱處理溫度等參數，實驗結果顯示，在鍍浴溫度50℃、鍍膜層數5層、熱處理溫度400℃時有較佳的光暗電流密度差值，相較於其他類似製程之文獻已獲得不錯之提升，無施加偏壓下其值可達0.32mA⁄cm^2 ，且相對於硫化物系列材料而言，本研究之氧化鋅光電極有較佳的長時間穩定性。

摘要(英)

In this study, zinc oxide thin films are deposited on ITO conductive glass substrates with chemical bath deposition (CBD) method. It can be used as the photoelectrode in photoelectrochemical water-splitting to produce hydrogen.
By changing different types and concentrations of complexing agent to form zinc oxide thin film, the various crystal structures are obtained, including particles, hexagonal cylinder, and flower-like structures. It is found that using 4% triethanolamine (TEA) as complexing agent, the particles structure can has better optical and photoelectrochemical properties, if 4% triethanolamine (TEA) is used as complexing agent
The impact of temperature of bath, number of deposition layers, and temperature of annealing on the properties of films are then be investigated. Results showed that current density difference between light and dark conditions is largest when the parameters are as following: 50℃ of bath temperature, 5 deposition layers, 400℃ of annealing temperature. The current density difference between light and dark conditions is 0.322mA⁄cm^2 without applying bias voltage. Films made in this thesis have better performance than those made in similar process before.

關鍵字(中)

★ 氧化鋅
★ 化學水浴沉積法
★ 錯合劑
★ 光電極

關鍵字(英)

★ Zinc Oxide
★ Chemical Bath Deposition
★ Complexing A

論文目次

摘要 I
Abstract II
致謝 III
目錄 IV
表目錄 VII
圖目錄 VIII
第一章緒論　　　　　　　　　　　　　　　　　　　　　　　　1
1-1 前言 1
1-2 各種製氫方式 3
1-3 光電化學產氫原理 4
1-4 化學水浴沉積法(Chemical Bath Deposition，CBD) 6
1-4-1 化學水浴沉積法基本反應機制 8
1-4-2 化學水浴沉積法沉積氧化物之反應機制 9
1-4-3 薄膜沉積成長機制 10
1-4-4 薄膜成長與溶解度之關係 11
1-5 文獻回顧 14
1-5-1 光電化學產氫及光觸媒文獻回顧 14
1-5-2 化學水浴沉積法文獻回顧 16
1-5-3 化學水浴沉積法沉積氧化鋅文獻回顧 18
1-6 研究目的 21
第二章研究方法與實驗步驟　　　　　　　　　　　　　　　　22
2-1 實驗流程及參數設定 22
2-2 實驗裝置及材料 22
2-2-1 實驗基材 22
2-2-2 實驗藥品 23
2-2-3 實驗設備 24
2-3 實驗步驟 25
2-3-1 基材前處理 25
2-3-2 反應溶液配置與鍍膜方法 26
2-3-3 鍍膜完成之試片後處理 28
2-3-4 電極封裝 28
2-4 薄膜物性量測分析 29
2-4-1 UV-Visible(紫外∕可見光光譜儀) 29
2-4-2 XRD(X-ray Diffraction，X光粉末繞射儀) 30
2-4-3 SEM(Scanning electron microscope，掃描式電子顯微鏡) 31
2-4-4 光電化學特性(光暗電流密度)量測 31
第三章結果與討論　　　　　　　　　　　　　　　　　　　　33
3-1 不同錯合劑與濃度對薄膜的影響 33
3-1-1 錯合劑為〖NH〗_3 33
3-1-2 錯合劑為C_6 H_12 N_4 36
3-1-3 錯合劑為TEA 39
3-2 不同錯合劑之最佳濃度參數比較 42
3-3 不同鍍浴溫度對薄膜的影響 43
3-4 不同鍍膜層數對薄膜的影響 45
3-5 不同熱處理溫度對薄膜的影響 48
3-6 穩定性測試 50
第四章結論與未來展望　　　　　　　　　　　　　　　　　　51
4-1 結論 51
4-2 未來展望 53
參考文獻　　　　　　　　　　　　　　　　　　　　　　　　　54

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指導教授

洪勵吾(Lih-wu Hourng)

審核日期

2012-7-10

推文