參考文獻 |
[1] E. Oliva , F. Dimroth and A. W. Bett “GaAs Converters for High Power Densities of Laser Illumination” Prog. Photovolt: Res. Appl. 2008; 16:289–295
[2]Laser-focus-world volume-42 issue-1 Photonic power delivery: Photonic power conversion delivers power via laser beams.
[3] J. Schubert, E. Oliva, F. Dimroth, W. Guter, R. Loeckenhoff, and A. W. Bett “High-Voltage GaAs Photovoltaic Laser Power Converters” IEEE Trans. Electron Devices, Vol. 56, No. 2, February 2009
[4]S. J.Wojtczuk, Spire Corporation, Bedford, MA 01730 USA “Long-Wavelength Laser Power Converters For Optical Fibers”26th PVSC; Sept. 30-0ct. 3,1997; Anaheim, CA
[5]C. L. Schow, F. E. Doany, C. Tsang, N. Ruiz, D. Kuchta, C. Patel, R. Horton, J. Knickerbocker, and J. Kash “300-Gb/s, 24-Channel Full-Duplex, 850-nm, CMOS-Based Optical Transceivers,” in Proc. OFC 2008 , pp. OMK5, San Diego, CA, Feb., 2008.
[6] N. Savage, “Linking with Light,” IEEE Spectrum, vol. 39, issue 8, Aug. 2002.
[7] H. A. Haus, “Waves and Fields in Optoelectronics,” 1984
[8] S. M. Sze, “Physics of Semiconductor devices,” John Wiley & Sons, 2nd Edition.
[9]acade.must.edu.tw/upfiles/ADUpload/c23_downmul1327094307.pdf
[10] D. A. Neamen “Semiconductor physics & Devices Basic Principle,” second edition
[11] w3.cyu.edu.tw/swchu/投影片檔/半導體第三章.ppt
[12]H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi,“High-Speed and High-Output InP–InGaAs Unitraveling-Carrier Photodiodes,” IEEE J. Quantum Electron., vol. 10, pp. 709–727, July/August 2004.
[13]N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, “InP-InGaA Uni-Traveling-Carrier Photodiode With Improved 3-dB Bandwidth of Over 150GHz,” IEEE Photon. Technol. Lett., vol. 10, pp. 412-414, Mar. 1998.
[14] J.-W. Shi, F.-M. Kuo, C.-S. Yang, S.-S. Lo, and C.-L. Pan, “Dynamic analysis of cascade laser power converters for simultaneous high-speed data detection and
optical-to-electrical dc power generation,” IEEE Trans. Electron Devices, vol. 58, no. 7, pp. 2049–2056, Jul. 2011.
[15]X. Li, N. Li, S. Demiguel, J.C. Campbell, D. A. Tulchinsky, and K. J. Williams,“A comparison of front and backside-illuminated high-saturation power partially depleted absorber photodetectors,” IEEE J. of Quantum Elec.,vol. 40,no. 9, pp.1321–1325, 2004
[16] Y. S. Wu, and J.W. Shi, “Dynamic Analysis of High-Power and High-Speed Near-Ballistic Unitraveling Carrier Photodiodes at W-Band," IEEE Photon. Technol. Lett., vol. 20, pp. 1160-1162, July. 2008
[17] Y. S. Wu, J.W. Shi, and P. H. Chiu “Analytical Modeling of a High-Performance Near-Ballistic Uni-Traveling-Carrier Photodiode at a 1.55μm Wavelength,” IEEE Photon. Technol. Lett., vol. 18, pp. 938-940, Apr. 2006.
[18] Laurent Vivien, Andreas Polzer, Delphine Marris-Morini, Johann Osmond, Jean Michel Hartmann, Paul Crozat,Eric Cassan, Christophe Kopp, Horst Zimmermann, Jean Marc Fédéli,"Zero-bias 40Gbit/s germanium waveguide photodetector on silicon" Opt. Express 20(2), 1096-1101(2012)
|