參考文獻 |
[1] B.J. Baliga, “Trends in power semiconductor devices,” IEEE Trans, Electron Device, vol. 43, pp. 1717-1713, Nov. 1996.
[2] T. P. Chow and R. Tyagi, “Wide bandgap compound semiconductors for superior high-voltage unipolar power devices,” IEEE Trans, Electron Device, vol. 41, 1481-1483, Aug. 1994.
[3] M. Trivedi and K. Shenai, “Performance evaluation of high-power wide bandgap semiconductor rectifiers,” J. Appl, phys., vol. 85, pp. 6889-6897, May 1999.
[4] N.Q. Zhnag, S. Keller, G. Parish, S. Heilman, S.P. DenBaars and U.K. Mishra, “High breakdown GaN HEMT with overlapping gate structure,” IEEE Electron Device Lett, vol. 21, pp. 421-423, 2000.
[5] B. J. Baliga, "Power semiconductor device figure of merit for high-frequency
applications," IEEE Electron Device Letters, vol. 10, pp. 455-57, 198
[6] M.S. Shur and M.A. Kahn, “Wide Band Gap Semiconductors. Good Results and Great Expections”, in the Proceedings of 23d International Symposium on GaAs and Related Compounds, St. Petersburg, Russia, Sep. 22-28, 1996, Institute Phys. Conferrence Series, No.155, Chapter 2, pp. 25-32, M.S. Shur and R. Suris, Editors, IOP Publishing, London 1997.
[7] F. A. Ponce, “Group III Nitride Semiconductor Compounds Physics and Applications”, pp.123-133, 1998.
[8] B.J. Baliga, “Trends in power semiconductor devices,” IEEE Trans, Electron Device, vol. 43, pp. 1717-1713, Nov. 1996.
[9] O.Ambacher et al., ”Two-dimension electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” Jorunal of Applied Physics, Vol 85, Num 6,(3222), 1999.
[10] B. J. Baliga, "Semiconductors for high-voltage, vertical channel FET's," J.Appl. Phys., vol. 53, pp. 1759-64, 1982.
[11] J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBars, J. S. Speck, and U. K.Mishra, "Polarization effects, surface states, and the source of electrons inAlGaN/GaN heterostructure field effect transistors," Applied Physics Letters,vol. 77, pp. 250-2, 2000.
[12] I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Polarizationinduced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy," Journal of Applied Physics, vol. 86, pp. 4520-4526, 1999.
[13] I. P. Smorchkova, L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy," Journal of Applied Physics, vol. 90, pp. 5196-201, 2001.
[14] S. Keller, G. Parish, P. T. Fini, S. Heikman, C.-H. Chen, N. Zhang, S. P. DenBaars, U. K. Mishra, and Y.-F. Wu, "Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures," J. Appl. Phys., vol. 86, pp. 5850-57, 1999.
[15] O. Ambacher, "Growth and applications of group III-nitrides," Journal of Physics D (Applied Physics), vol. 31, pp. 2653-2710, 1998.
[16] L. Shen, S. Heikman, B. Moran, R. Coffie, N.-Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. DenBaars, and U. K. Mishra, "AlGaN/AlN/GaN high-power microwave HEMT," IEEE Electron Device Letters, vol. 22, pp. 457-9, 2001.
[17] S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN," Applied Physics Letters, vol. 78, 2001.
[18] Bhapkar, U.V., and Sur,. M.S., “Monte Carlo calculation of velocity-field characteristics of wurtzite GaN,” J.Appl. Phys., vol. 82, 1997.
[19] A. Chini, D. Buttari, R. Coffie, and U.K. Mishra, “12W/mm power density AlGaN/GaN HEMTs on sapphire substrate,” Electronics Letters, Vol. 40, No. 1, 2004.
[20] 林正國, “異質結構高速移導率電晶體模擬、製作與大訊號模型之建立,” 2001中央大學電機所碩士班論文
[21] P. E. Riley, S. S. Peng, L. Fang, “Plasma etching of Aluminum for ULSI circuits”, Solid State Tech., pp.47, 1993
[22] S. K. Ghandhi, “VLSI Fabrication Principles,” pp.635, 1994.
[23] 林柏辰, “氮化鋁鎵/氮化鎵高電子移導率場效電晶體之製作與應用,” 2005中央大學電機所碩士班論文
[24] Z. Z. Bandic, P. M. Bridger and T. C. Canali, “High voltage (450V) GaN Schottky rectifiers,” Applied Physics Letters, vol. 74, 1999 |