超高速(>40GHz)低驅動電壓(<2V)雙空乏區消逝波波導行波式致電吸收調制器

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姓名

蕭安成(An-Cheng Shiao) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

超高速(>40GHz)低驅動電壓(<2V)雙空乏區消逝波波導行波式致電吸收調制器
(Evanescently-Coupled Dual-Depletion-Region Traveling-Wave Electroabsorption Modulator with High-Speed(>40GHz) and Low-Driving-Voltage(<2V) Performance)

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摘要(中)

在現今高速的光通信系統中，高速的(>10Gbits/sec) 光電調制器為通信系統中非常關鍵性的一部分。而為了達到高速，元件的電容必須縮小，根據的公式，為了縮小電容，主動區的面積必須縮小(2μm×75μm)，但一再縮小主動區，會遇到以下問題：光偶合損耗(coupling loss)變大、不易於準確劈裂以及難於量測。現在普遍的解決的方法有以再磊晶( re-growth )的方式去製作被動的光波導來增加元件的總長度等，但再磊晶等方法是一種較為複雜的製程。所以我們設計了一種在主動區前加上一個經由設計後的消逝波波導管，它可以將光從波導管中導波至主動區，讓我們直接縮短主動區長度而不會縮短元件總長度，因此不會遇到因縮小主動區時所遇到的問題。而量子井以及雙空乏區的設計，也同時改善了元件對極化的敏感度以及高速與驅動電壓間的扺觸。
實驗結果驗證，我們元件的設計結構確實降低了驅動電壓 (V20dB=1.65V)，在穿透係數(S21)的量測中f3dB~60GHz，而電-光響應頻寬大於45 GHz 的表現，經計算後的FOM大於27.19，與近年來光調制器的FOM相比，我們元件的FOM得到極大的改善。

摘要(英)

We demonstrate a novel structure of traveling-wave electro-absorption modulator (EAM) at a 1.55um wavelength. By incorporating the epi-layer structure of Dual-Depletion-Region Electro-Absorption Modulator (DDR EAM) with an evanescently-coupled optical waveguide and the traveling-wave electrodes, the demonstrated device can achieve low electrical return loss (-20dB at ~60GHz), wide 3-dB bandwidth (60GHz) of electrical transmission loss, wide electrical-to-optical (EO) bandwidth (45GHz), and low 20dB driving-voltage (V20dB, 1.65V) with extremely low polarization dependency. This new structure can not only achieve excellent figures-of-merit but release the burden imposed on downscaling the core width or length of high-speed/low driving-voltage EAM without using epitaxial re-growth or ion-implantation techniques to isolate the active and passive regions.

關鍵字(中)

★ 致電吸收調制器
★ 調制器

關鍵字(英)

★ electroabsorption modulator
★ modulator

論文目次

目錄. . . . . . . . . . . . . . . . . . . . . . . . . . Ⅰ
圖目錄. . . . . . . . . . . . . . . . . . . . . . . . .Ⅲ
表目錄. . . . . . . . . . . . . . . . . . . . . . . . .Ⅵ
第一章、導論

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指導教授

許晉瑋(J.-W. Shi)

審核日期

2007-1-2

推文