參考文獻 |
[1] I. Bahl and P. Bhartia, “Microwave Solid State Circuit Design,” Second Edition, Wiley-Interscience, 2003.
[2] J. F. White, “High frequency techniques – An introduction to RF and Microwave Engineering,” IEEE Press, 2004.
[3] C. Bowick, “RF Circuit Design,” Indiana/H. W. Sams, 1982.
[4] B. Razavi, “Design of Analog CMOS Integrated Circuits,” McGraw-Hill, 2001.
[5] R. Gilmore, L. Besser, “Practical RF Circuit Design for Modern Wireless Systems: Vol. II - Active Circuits and Systems,” Artech House, 2003.
[6] G. D. Vendelin, A. M. Pavio, and U. L. Rohde, ”Microwave circuit design using linear and nonlinear techniques,” New York/John Wiley & Sons, 1990.
[7] G. Gonzalez, “Microwave Transistor Amplifiers: Analysis and Design,” Upper Saddle River, N.J Prentice Hall, 1997.
[8] Simons and Rainee, “Coplanar waveguide circuits, components, and systems,” John Wiley & Sons, 2001.
[9] X. Chen, J. Liu, J. Wang, “Ka-band AlGaAs/InGaAs PHEMT monolithic low-noise amplifier,” Millimeter Wave and Far Infrared Science and Technology Proc. 4th International Conference on , 12-15 , Aug. 1996.
[10] H.S. Chou, C.C. Liu, T.H. Chen, “Ka-band monolithic GaAs PHEMT low noise and driver amplifiers,” Microwave Conference, Asia-Pacific, APMC 2001,
vol. 1 , 3-6, Dec. 2001
[11] J. S. Yuk, B. G. Choi, C. S. Park, “Device and circuit optimization of PHEMT MMIC LNA for low power consumption,” Microwave Conference, Asia-Pacific APMC 2001. vol. 1, 3-6, Dec. 2001
[12] Y. Sun, J. Borngraber, F. Herzel, and W. Winkler, ”A fully integrated 60 GHz LNA in SiGe:C BiCMOS technology,” Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the, pp. 14-17, 9-11 Oct. 2005.
[13] S. Handa, E. Suematsu, H. Tanaka, Y. Motouchi, M. Yagura, A. Yamada, and H. Sato, “60GHz-band low noise amplifier and power amplifier using InGaP/GaAs HBT technology,” Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 25th Annual Technical Digest IEEE, pp. 227-230, 2003.
[14] K. Fujii, M. Adamski, P. Bianco, D. Gunyan, J. Hall, R. Kishimura, C. Lesko, M. Schefer, S. Hessel, H. Morkner, and A. Niedzwiecki, “A 60GHz MMIC Chipset for 1-Gbith Wireless Links,” Microwave Symposium Digest, IEEE MTT-S International, vol. 3, pp. 1725-1728, 2-7 June 2002.
[15] Y. Mimino, K. Nakamura, Y. Hasegawa, Y. Aoki, S. Kuroda, and T. Tokumitsu, “A 60 GHz millimeter-wave MMIC chipset for broadband wireless access system front-end,” Microwave Symposium Digest, IEEE MTT-S International, vol. 3, pp. 1721-1724, 2-7 June 2002.
[16] K. Nishikawa, B. Piernas, K. Kamogawa, T. Nakagawa, and K. Araki, “Compact LNA and VCO 3-D MMICs using commercial GaAs PHEMT technology for V-band single-chip TRX MMIC,” Microwave Symposium Digest, IEEE MTT-S International, vol. 3, pp. 1717-1720, 2-7 June 2002.
[17] J. B. Beyer, S. N. Prasad, R. C. Becker, J. E. Nordman, and G..K. Hohenwarter, “MESFET Distributed Amplifier Design Guidelines,” IEEE Trans. Microwave Theory Tech., vol. 32, no. 3, pp. 268-275, Mar. 1984.
[18] S. N. Prasad, J. B. Beyer, and I. S. Chang, “Power-bandwidth considerations in the design of MESFET distributed amplifiers,” IEEE Trans. Microwave Theory Tech., vol. 36, no. 7, pp. 1117-1123, July. 1988.
[19] B. Y. Banyamin and M. Berwick, “The gain advantages of four cascaded single stage distributed amplifier configurations,” IEEE MTT-S Int. Microwave Symp. Dig., Boston, MA, pp. 1325-1328, June 11-16, 2000.
[20] J. P. Rooney, R. Parry, I. Hunter, R.D. Pollard, “A filter synthesis technique applied to the design of multistage broadband microwave amplifiers,” Microwave Symposium Digest, 2002 IEEE MTT-S International Volume 3, 2-7 Page(s):1915 – 1918, June 2002
[21] K. L. Deng, T. W. Huang, H. Wang, “Design and analysis of novel high-gain and broad-band GaAs pHEMT MMIC distributed amplifiers with traveling-wave gain stages,” IEEE Trans. Microwave Theory and Tech., vol. 51, no. 11,
pp. 2188-2196, Nov. 2003.
[22] F. Ellinger, “26–42 GHz SOI CMOS low noise amplifier,” IEEE J. Solid-State Circuits, vol. 39, no. 3, pp. 522-528, Mar. 2004.
[23] X. Guan and A. Hajimiri, “A 24-GHz CMOS front end,” IEEE J. Solid-State Circuits, vol. 39, no. 2, pp. 368–373, Feb. 2004.
[24] K.-W. Yu, Y.-L. Lu, D.-C. Chang, V. Liang, and M. F. Chang, “K-Band using 0.18um CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 14, no. 3, pp. 106-108, Mar. 2004.
[25] A. Masud, H. Zirath, M. Ferndahl, and H.-O. Vickes, “90-nm CMOS MMIC amplifier,” in RFIC Symp. Dig., pp. 971-974, 2004.
[26] Y. Mimino, M. Hirata, K. Nakamura, K. Sakamoto, Y. Aoki, and S. Kuroda, “High gain-density K-band P-HEMT LNA MMIC for LMDS and satellite communication,” in IEEE MTT-S Int. Dig.., vol. 1, pp. 17-20, Jun. 2000.
[27] H.-M. Hsu, J.-Y. Chang, J.-G. Su, C.-C. Tsai, S.-C. Wong, C. W. Chen, K. R. Peng, S. P. Ma, C. H. Chen, T. H. Yeh, C. H. Lin, Y. C. Sun, and C. Y. Chang, “A 0.18-um foundry RF CMOS technology with 70-GHz fT for single chip system solutions,” in IEEE MTT-S Int. Dig., pp.1869-1872, 2001.
[28] D. K. Shaeffer and T. H. Lee, “A 1.5-V, 1.5-GHz CMOS low noise amplifier,” IEEE J. Solid-State Circuits, vol. 32, no. 5, pp. 745-759, May 1997.
[29] Kärkkäinen, M., Varonen, M., Kangaslahti, P., Halonen, K. “Integrated Amplifier Circuits for 60 GHz Broadband Telecommunication,” Proc. Analog Integrated Circuits and Signal, vol. 42, no. 1, pp. 37-46, Netherlands, Jan. 2005.
[30] Sonnet. (2004) High frequency electromagnetic software. [Online]. Available: http://www.sonnetusa.com
[31] K.K. Moez and M.I. Elmasry, “Design of CMOS distributed amplifiers for maximum bandwidth,” Microelectronics, ICM Proceedings. The 16th International Conference on pp. 317-319, 6-8 Dec. 2004
[32] M.-D. Tsai, K.-L. Deng, H. Wang, C.-H. Chen, C.-S. Chang, and J.G.J. Chern, “A miniature 25-GHz 9-dB CMOS cascaded single-stage distributed amplifier,” Microwave and Wireless Components Letters, IEEE, vol. 14, no. 12, pp. 554-556, Dec. 2004.
[33] R.E. Amaya, N.G. Tarr, and C. Plett, “A 27 GHz fully integrated CMOS distributed amplifier using coplanar waveguides,” Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. IEEE, pp. 193-196, 6-8 June 2004.
[34] L.-H. Lu, T.-Y. Chen, and Y.-J. Lin, “A 32-GHz non-uniform distributed amplifier in 0.18-um CMOS,” Microwave and Wireless Components Letters, IEEE, vol. 15, no. 11, pp. 745-747, Nov. 2005.
[35] M. S. Heins, C. F. Campbell, M. Y. Kao, M. E. Muir, and J. M. Carroll, “A GaAs MHEMT distributed amplifier with 300-GHz gain-bandwidth product for 40-Gb/s optical applications,” IEEE MTT-S Int. Microwave Symp. Dig., vol. 2, pp. 1061-1064, June 2002.
[36] H. Shigematsu, N. Yoshida, M. Sato, T. Hirose, and Y. Watanabe, “45-GHz distributed amplifier with a linear 6-Vp-p output for a 40-Gb/s LiNbO modulator driver circuit,” IEEE Int. GaAs Symp. Dig., vol. 1, pp. 137-140, June 2001.
[37] M. S. Heins, J. M. Carroll, M. Y. Kao, C.F. Steinbeiser, T.R. Landon, C.F. Campbell, “An ultra-wideband GaAs pHEMT driver amplifier for fiber optic communications at 40 Gb/s and beyond,” Optical Fiber Communication Conference and Exhibit, pp. 273-274, 17-22 Mar 2002. |