含撞擊游離模型的模板式二維元件模擬器之開發

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姓名

張博舜(Po-Shun Chang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

含撞擊游離模型的模板式二維元件模擬器之開發
(Developmentof 2D template device simulator including impact-ionization models)

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摘要(中)

本論文主要是開發一個模板式二維元件模擬器，包含了撞擊游離的電路模型。它以模板式的輸入語言為基礎，模板式的輸入語言可以幫助使用者更容易去編寫輸入檔案。因為撞擊游離電路模型在元件模擬實相當的耗費時間而且撞擊游離機制是電場的強烈函數，所以我們利用了兩個方法去模擬撞擊游離電流，期望能找一個比較好的方法去節省模擬所需要的時間。在二極體的模擬中，我們發現在電壓反偏時，電流會有階梯狀的現象，我們將會討論它的成因和如何改善這個現象。最後，我們應用II_Dev2D去模擬BJT和SCR並學習這些元件的工作原理。

摘要(英)

In this thesis, we develop a template 2D device simulator, which included impact-ionization circuit model. It is based on the template input file. The template input language can help user write input file easier. Because the impact-ionization circuit model spends much time on the device simulation and the impact-ionization mechanism is a strong function of electric field. So we use two methods to model the impact-ionization current and hope to find a good way to save simulation time. In the PN diode simulation, we found the staircase current in small reverse bias. We discuss the cause of the staircase current and improve this phenomenon. Finally, we apply II_Dev2D to simulate the BJT and the SCR and study the operation concepts of these applications.

關鍵字(中)

★ 撞擊游離
★ 模板式

關鍵字(英)

★ template
★ impact-ionization

論文目次

1.Introduction .......................................................1
2.Modeling the impact-ionization current for device simulation ......3
2.1 2D Equivalent Circuit Model .....................................3
2.2 Impact-Ionization generation mechanism ..........................7
2.3 Impact-ionization circuit model .................................9
2.3.1 The non-uniform method ......................................10
2.3.2 The uniform method .........................................11
2.4 The comparison of the non-uniform method and the uniform method ...13
3. Development of template 2D device simulator .....................16
3.1 Introduction to II_Dev2D ......................................16
3.2 Development of input file for II_Dev2D ..........................20
3.3 The staircase current of the PN diode ..........................25
3.4 Comparison between the packaged and the original versions ......27
4. Applications of II_Dev2D simulation ..............................31
4.1 The bipolar transistor simulation ..........................31
4.2 The thyristor SCR simulation .................................36
5. Conclusion .......................................................43
References ..................................44

參考文獻

[1] D. A. Neamen, Semiconductor Physics And Devices, Chapter 8, McGraw-Hill, 2003.
[2] C. L. Teng, “An equivalent circuit approach to mixed-level device and circuit simulation,” M. S. Thesis, institute of EE, National central University, Taiwan, Republic of China, Jun. 1997.
[3] M. Shur, Introduction to Electronic Devices, Chapter 3, John Wiley & Sons Inc..1996.
[4] E. S. Yang, Microelectronic Device, Chapter 5, McGraw-Hill, 1988.
[5] S. Selberherr, Analysis and Simulation of Semiconductor Device, Chapter 4, Springer-Vwelag Wiem, 1984.
[6] C. C. Chang, “Verification of 1D BJT numerical simulation and its application to mixed-level device and circuit simulation,” M. S. Thesis, institute of EE, National central University, Taiwan, Republic of China, Jun. 2001.
[7] H. C. Casey, Devices For Integrated Circuit, Chapter 4, John Wiley & Sons Inc..1999.
[8] D. A. Neamen, Semiconductor Physics And Devices, Chapter 15, McGraw-Hill, 2003.
[9] S. J. Li, “An equivalent circuit of Impact-Ionization and its Applications on Semiconductor Devices,” M. S. Thesis, institute of EE, National central University, Taiwan, Republic of China, Jun. 2002.
[10] Z. Lisik and M. Turowski, “Two-dimensional simulation of thyristor transient states from conduction to forward blocking,” IEE Proceedings G, vol. 138, no. 5, pp.575-561, Oct. 1991.

指導教授

蔡曜聰(Yao-Tsung Tsai)

審核日期

2006-6-22

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