以磷化銦為基材橫向接面紅外光白光二極體

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姓名

洪梓健(Tzu-Jien Hung) 查詢紙本館藏

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電機工程學系

論文名稱

以磷化銦為基材橫向接面紅外光白光二極體
(InP Based Transverse Junction Light-Emitting-Diodes for White-LightGeneration at Infrared Wavelengths)

相關論文

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★ 具有大面積且在高靈敏度、低暗電流操作下具有頻寬增強效應的10 Gbit/sec平面式 InAlAs 累增崩潰光二極體	★ 應用串接式技術達到超高飽和電流-頻寬乘積(7500mA-GHz,75mA,100GHz)的近彈道傳輸光偵測器
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★ 具有同時高速資料傳輸及產生直流電功率的砷化鎵/磷化銦鎵的雷射功率轉換器	★ 超高速(>1Gb/s)可見光發光二極體應用於塑膠光纖通訊及內部載子動力學的研究
★ 具有超低耗能,傳輸資料量比值在850nm波段超高速(40 Gb/s)面射型雷射	★ 超高速(~300GHz)光偵測器的製造與其在毫米波生物晶片上的應用
★ 超高速覆晶式(>300GHz)高功率(~mW)光偵測器製作與量測	★ 具有單空間模態,低發散角,高功率的鋅擴散二維850nm面射型雷射陣列
★ 應用於850到1550 nm波長光連結且具有高速,高效率和大面積的p-i-n光偵測器	★ 應用於中距離(2km)至短距離光連結知單模態、高速、高輸出光功率的850nm波段面射型雷射
★ 應用在光連接具有高可靠度高速(>25Gbit/sec) 850光波段的垂直共振腔雷射	★ 具有高可靠度/高功率輸出與直流到次兆赫茲 (≧300GHz)操作頻寬的超高速光偵測器和其覆晶式封裝設計與分析

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摘要(中)

吾人製作出橫向接面紅外光白光二極體，其橫向接面結構由鋅擴散來達成，發光波長由主動層之量子井設計決定，由於橫向P-N接面使得主動層中，所有量子井發光功率可以有相近的能量，以製作出每一個波長強度相同，及極寬的3db頻寬~580nm，吾人由最佳條件550℃-40分鐘鋅擴散，完成一元件且得到光譜半高寬為580nm在驅動電流為60mA，波長從1042nm ~1622nm的發光二極體。

摘要(英)

We demonstrate a novel structure of light-emitting-diodes (LEDs) at infrared wavelengths for broadening their optical bandwidth performance. By incorporating the transverse p-n junction with multiple-quantum-wells (MQWs), which have different center wavelengths, the problems of non-uniform carrier distribution in the MQWs of traditional LEDs with vertical p-n junction can be totally eliminated. Tremendous wide 3-dB optical bandwidth (~580nm, 1042nm~1622nm) under 60mA injected current has been demonstrated.

關鍵字(中)

★ 橫向接面二極體
★ 鋅擴散
★ 多重量子井

關鍵字(英)

★ MQW
★ zinc diffision
★ Transverse Junction diode

論文目次

目錄
Abstract . . . . . . . . . . . . . . . . . . . . . . . . . Ⅰ
摘要. . . . . . . . . . . . . . . . . . . . . . . . . . . Ⅱ
致謝. . . . . . . . . . . . . . . . . . . . . . . . . . . Ⅲ
目錄 . . . . . . . . . . . . . . . . . . . . . . . . . . . .Ⅳ
圖目錄 . . . . . . . . . . . . . . . . . . . . . . . . . .. Ⅵ
表目錄 . . . . . . . . . . . . . . . . . . . . . . . . . Ⅷ
第一章、簡介. . . . . . . . . . . . . . . . . . . . . . . . .1
? 1.1寬頻光源應用於醫學方面-光學同調斷層掃描(Optical Coherent Tomography ,OCT) . . . . . . . . . . . . . . . . .3
? 1.2寬頻光源應用於光纖通訊-半導體光放大器(Semiconductor optical amplifier SOA) . . . . . . . . . . . . . . . . . .6
第二章、理論. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
? 2.1使用橫向接面二極體的目的. . . . . . . . . . . . . . . . .10
? 2.2擴散理論(substitution & interstitial mechanism) . . . . . .15
? 2.3量子井設計. . . . . . . . . . . . . . . . . . . . .16
第三章、元件製程. . . . . . . . . . . . . . . . . . . . . .21
? 3.1 元件製作概說. . . . . . . . . . . . . . . . . . . .21
? 3.2 製作程序. . . . . . . . . . . . . . . . . . . . . . . . . .24
第四章、量測結果與分析. . . . . . . . . . . . . . . . . . . .31
? 4.1前導性實驗結果. . . . . . . . . . . . . . . . . . . .32
? 4.2不同擴散溫度下的元件特性. . . . . . . . . . . . . . 36
? 4.3不同擴散時間的元件特性. . . . . . . . . . . . . . . . . . .41
第五章、結論. . . . . . . . . . . . . . . . . . . . . . . . . . . . .47
參考文獻. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .48
附錄A 量子井模擬程式. . . . . . . . . . . . . . . . . . . .53
著作列表. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55

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指導教授

許晉瑋(Jin-Wei Shi)

審核日期

2006-7-16

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