模板式電路和二維元件模擬器之開發

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姓名

洪國欽(Guo-Chin Hong) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

模板式電路和二維元件模擬器之開發
(Development of Template Circuit and 2D Device Simulator)

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摘要(中)

本論文是主要開發兩套模板式模擬器,第一個是模擬器叫做是模板式暫態電路模擬器,我們簡稱它為TR_CKT,它是包含許多基本的電路元件,所以使用者可以用這些電路元件來做電路相關應用。第二個模擬器是模板式暫態元件模擬器,我們簡稱它為TR_DEV2D,它的主要原理是用Poisson’’s方程式和電子電洞連續方程式去組成等效電路,所以它可以用來模擬二維半導體元件和混階之應用。我們對這兩套模擬器開發了輸入語法,使用者可以把想要模擬的電路應用,二維元件,或混階元件和電路應用寫在輸入檔去做模擬。

摘要(英)

In this thesis, we develop two template simulators. First simulator is the template transient circuit simulator (TR_CKT). It includes many circuit elements. The user can use TR_CKT for circuit application. Second simulator is the template transient device simulator (TR_DEV2D). The principle of the TR_DEV2D is to formulate Poisson’s and continuity equations into the equivalent-circuit model. It can be used to simulate the semiconductor device and mixed-level application. We have developed the format of input files for the two simulators. The user can follow the input files for circuit simulation, 2D device simulation, and the mixed-level device and circuit simulation.

關鍵字(中)

★ 模板式
★ 二維元件

關鍵字(英)

★ template
★ 2d device

論文目次

1. Introduction....1
2. Development of Template Transient Circuit Simulator..........3
2.1 Introduction to TR_CKT........3
2.2 TR_CKT statement format........ 4
2.3 MOSFET I-V comparison between the packaged and the unpackaged versions..........6
2.4 MOSFET C-V comparison between the packaged and the unpackaged versions...........8
2.5 Circuit applications.............13
3. Development of Template Transient Device Simulator.........................23
3.1 Introduction to TR_DEV2D............23
3.2 2-D equivalent circuit model for TR_DEV2D....24
3.3 TR_DEV2D statement format............27
3.4 Comparison between the packaged and the unpackaged versions...........28
3.5 2D device applications............31
3.6 Mixed-level applications...........36
4. Conclusion..........................40
List of reference....................41

參考文獻

[1] L. Nagel, “SPICE2: A computer program to simulate semiconductor circuits,” Electron. Res. Lab., Univ. California at Berkeley, Berkeley, UCB/ERL M520, 1975.
[2] MEDICI: Two-Dimensional Semiconductor Simulation Program. Palo Alto, CA: Technology Modeling ASSOCIATES, 1993.
[3] Y.-M. Sun, “Levelized Incomplete LU Factorization and Its application to Quasi-Static MOSFET C-V Simulation,” M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 2001.
[4] G.. Massobrio, and P. Antognetti, “Semiconductor Device Modeling with SPICE,” McGraw-Hill Company, Inc.,1993.
[5] N. Weste, and K. Eshraghian, “Principles of CMOS VLSI Design,” Addison-Wesl-
ey Publishing Company, Inc, 1993.
[6] B. Razavi, “Design of Analog CMOS Integrated Circuits,” the McGraw-Hill Company, Inc., 2001.
[7] R. Jacob Baker, “CMOS Circuit Design, Layout, and Simulation,” Wiley- Intersci-
ence, Inc, 2005.
[8] C.-L. Teng, “An equivalent circuit approach to mixed-level device and circuit simulation,” M. S. Thesis, Institute of EE, National Central University, Taiwan, Republic of China, Jun. 1997.
[9] A. Sedra, and K. Smith, “Microelectronic Circuit,” Oxford University, Inc 2004

指導教授

蔡曜聰(Yao-Tsung Tsai)

審核日期

2006-6-22

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