交流白光非晶碳氫薄膜發光二極體之光電特性改善

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：90

、訪客IP：3.12.36.45

姓名

王子綱(Tzu-Kang Wang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

交流白光非晶碳氫薄膜發光二極體之光電特性改善
(Improvement of Optoelectronic Characteristics of a-C:H Alternating-Current White Thin-film Light-Emitting Diodes)

相關論文

★ 金屬-半導體-金屬光偵測器的特性	★ 非晶質氮化矽氫基薄膜發光二極體與有機發光二極體的光電特性
★ 具非晶質n-i-p-n層之氧化多孔矽發光二極體的光電特性	★ 低漏電流與高崩潰電壓大面積矽偵測器製程之研究
★ 具自行對準凹陷電極1x4矽質金屬-半導體-金屬光偵測器陣列的特性	★ 非晶矽射極異質雙載子電晶體與有機發光二極體的特性
★ 吸光區累崩區分離的累崩光二極體	★ 蕭特基源/汲極接觸的反堆疊型非晶質矽化鍺薄膜電晶體
★ 矽晶圓上具有隔離氧化層非晶質薄膜發光二極體之光電特性	★ 具非晶異質接面及溝渠式電極之矽質金屬-半導體-金屬光偵測器的暗電流特性
★ 非晶矽/晶質矽異質接面矽基金屬-半導體-金屬光檢測器與具非晶質無機電子/電洞注入層高分子發光二極體之研究	★ 具非晶質矽合金類量子井極薄障層之高靈敏度平面矽基金屬–半導體–金屬光檢測器
★ 具蕭特基源/汲極的上閘極型非晶矽鍺與多晶矽薄膜電晶體	★ 大面積矽偵測器的製程改良與元件設計
★ 具組成梯度能隙非晶質矽合金電子注入層與電洞緩衝層的高分子發光二極體	★ 非晶質吸光區與累增區分離之類超晶格累崩光二極體

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

[檢視]

[下載]

本電子論文使用權限為同意立即開放。
已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。
請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。

摘要(中)

本研究的主要目的是改善交流白光非晶質薄膜發光二極體的特性。先前的研究已成功地運用一層很薄的本質非晶碳氫做為發光層，且利用PECVD系統在位氫電漿處理發光層薄膜，提高薄膜中的氫含量並且修補其中懸鍵來提高元件發光效率。在本研究中，主要是藉由調整發光層的厚度及在外部電極與i-a-C:H層之間加入i-a-Ge:H, i-a-SiGe:H, i-a-Si:H, and i-a-SiC:H 層來降低外部電極與非晶矽半導體間的接面電阻。實驗結果顯示，不同的膜厚與結構會明顯地影響元件發光效率。同時，我們也對元件光電特性做一系列量測，包括發光亮度、發光頻譜以及交流頻率響應等等。量測結果顯示，固定頻率下，不同大小的電壓值幾乎不會改變元件發光波段，但是在固定的交流電壓下，隨著頻率的增加卻會導致發光頻譜出現紅移的現象，而且我們也發現當薄膜發光二極體被操作在特定頻率範圍時可有效提昇元件的發光亮度。

摘要(英)

The main purpose of this study is to improve the optoelectronic characteristics of the previously reported alternating-current (AC) white amorphous thin-film light-emitting diodes, which have been fabricated with i-a-C:H luminescent layer treated with in-situ H2-plasma. The device optoelectronic characteristics had been successfully improved with the adjustment of i-a-C:H luminescent layer thickness and the insertion of i-a-Ge:H, i-a-SiGe:H, i-a-Si:H, and i-a-SiC:H layers between the external electrode and i-a-C:H layer to lower the contact resistances between the external electrode and amorphous semiconductor. A series of measurements including device brightness, electroluminescence (EL) spectrum, and frequency response had been taken to investigate the device characteristics. The results showed that the peak wavelength of device EL spectrum was almost independent of the applied-voltage. However, the EL spectrum would be red-shifted with the increasing AC frequency.

關鍵字(中)

★ 光電特性
★ 發光二極體
★ 非晶碳氫
★ 薄膜
★ 白光
★ 交流

關鍵字(英)

★ optoelectronic characteristics
★ light-emitting diodes
★ alternating-current
★ a-C:H
★ white
★ thin-film

論文目次

Table Captions…………………………………………Ⅲ
Figure Captions………………………………………Ⅳ
Chapter 1 INTRODUCTION…………………………………1
Chapter 2 EXPERIMENTAL PROCEDURES………3
2.1 Preparations of Various Thin-Films………3
2.1.1 Deposition System………………………3
2.1.2 Depositions of a-Ge:H, a-SiGe:H, a-Si:H, a-SiC:H and a-C:HFilms………………………3
2.2 Device Synopsis…………………………………6
2.3 Device Fabrication………………………………9
2.4 Measurement Techniques…………………………16
2.4.1 Optical Bandgap of Amorphous Film……………………16
2.4.2 EL Intensity and Brightness……………………………16
2.4.3 EL Spectrum and Frequency Response…………………16
2.4.4 Brightness Under Alternating-Current Operation……17
2.4.5 Electrical Circuit of Output Buffer…………………17
Chapter 3 RESULTS AND DISCUSSION……………23
3.1 Improvement of device optoelectronic properties……23
3.1.1 Device 1: Effects of the i-a-C:H layer thickness..23
3.1.2 Measurements of device 1 AC Response…………………26
3.1.3 Device 2: Effects of GG and CG layers………………32
3.1.4 Measurements of device 2 AC Response………………34
Chapter4 CONCLUSION……………………………………49
REFERENCES……………………………………………………52

參考文獻

[1] R. J. Xie, N. Hirosaki, M. Mitomo, K. Takahashi, and K. Sakuma, “Highly efficient white-light-emitting diodes fabricated with short-wavelength yellow oxynitride phosphors,” Appl. Phys. Lett., Vol. 88, pp. 101104-1-101104-3, 2006.
[2] T. Ma, J. Xu, J. Du, W. Li, X. Huang, and K. Chen, “Full color light emission from amorphous SiCx:H with organic-inorganic structures,” J. Appl. Phys., Vol. 88, pp. 6408-6412, 2000.
[3] Y. Z. Wang, D. D. Gebler, L. B. Lin, J. W. Blatchford, S. W. jessen, H. L. Wang, and A. J. Epstein, “Alternating-current light-emitting devices based on conjugated polymers,” Appl. Phys. Lett., Vol. 68, pp. 894-896, 1996.
[4] R. Österbacka, A. J. Pal, K.-M. Källman, and H. Stubb, “Frequency response of molecularly thin alternating current light-emitting diodes,” J. Appl. Phys., Vol. 83, pp. 1748-1752, 1998.
[5] A. J. Pal, R. Österbacka, K.-M. Källman, and H. Stubb, “High-frequency response of polymeric light-emitting diodes,” Appl. Phys. Lett., Vol. 70, pp. 2022-2024, 1997.
[6] T. R. Yu,“Design and fabrication of a-C:H and a-SiN:H alternating-current white thin-film light-emitting diodes,”M. S. Thesis, NCU, Taiwan, R.O.C.,2006.
[7] R. H. Yeh, T. R. Yu, S. Y. Lo, and J. W. Hong,“Alternating-current white thin light-emitting diodes based on hydrogenated amorphous carbon layer”IEEE Photo. Technol. Lett., Vol. 18, No. 22, 2006.
[8] C. Casiraghi, A. C. Ferrari, and J. Robertson, “Raman spectroscopy of hydrogenated amorphous carbons,” Phys. Rev. B, Vol. 72, pp. 085401-1-085401-14, 2005.
[9] J. Xu, J. Mei, X. Huang, W. Li, Z. Li, X. Li, and K. Chen, “The change of photoluminescence characteristics of amorphous carbon films due to hydrogen dilution,” J. Non-Cryst. Solids, Vol. 338-340, pp. 481-485, 2004.
[10] M. Koos, M. Veres, M. Füle, and I. Pocsik, “Ultraviolet photoluminescence and its relation to atomic bonding properties of hydrogenated amorphous carbon,” Diamond Relat. Mater., Vol. 11, pp. 53-58, 2002.
[11] J. Robertson, “Photoluminescence mechanism in amorphous hydrogenated carbon,” Diamond Relat. Mater., Vol. 5, pp. 457-460, 1996.
[12] S. B. Kim and J. F. Wager, “Electroluminescence in diamond-like carbon films,” Appl. Phys. Lett., Vol. 53, pp. 1880-1881, 1988.
[13] R. Reyes, C. Legnani, P. M. Ribeiro Pinto, M. Cremona, P. J. G. de Araújo, and C. A. Achete, “Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films,” Appl. Phys. Lett., Vol. 82, pp. 4017-4019, 2003.
[14] D. Kruangam, T. Endo, M. Deguchi, W. Guang-Pu, H. Okamoto, and Y. Hamakawa, “Amorphous Silicon-Carbide Thin-Film Light Emitting Diode,” Opto. Dev. and Technol., Vol. 1, No. 1, pp. 67-84, 1986.
[15] Y. A. Chen, C. F. Chiou, W. C. Tsay, L. H. Laih, J. W. Hong, and C. Y. Chang,“ Optoelectronic characteristics of a-SiC:H-Based p-i-n thin-film light-emitting diodes with low-resistance and high-reflectance N+-a-SiCGe:H layer,”IEEE Trans. Electronic Devices, Vol.44, No.9, pp.1360-1366, 1997
[16] J. Y. Chen, “The Effect of graded-gap and barrier layer structure on the electroluminescence properties of a-SiC:H p-i-n thin-film light emitting diode,” M. S. Thesis, NCU, Taiwan, R.O.C., 1992.
[17] D. Kruangam, T. Endo, M. Deguchi, W. Guang-Pu, H. Okamoto, and Y. Hamakawa, “Amorphous silicon-carbide thin-film light emitting diode,” Optoelectronics Devices and Technologies, Vol. 1, No. 1, pp. 67-84, 1986.
[18] C. C. Wu, C. I. Wu, J. C. Sturm, and A. Kahn, “Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices,” Appl. Phys. Lett., Vol. 70, pp. 1348-1350, 1997.
[19] J. W. Lee and K. S. Lim, “In situ hydrogenation of visible a-SiC:H-based p-i-n type thin-film light-emitting diodes using the photochemical vapour deposition method,” Semicond. Sci. Technol., Vol. 11, pp. 597-600, 1996.
[20] J. W. Lee and K. S. Lim, “Dramatic improvement of performance of visible hydrogenated amorphous silicon carbide based p-i-n thin-film light-emitting diodes by two-step hydrogenation,” Appl. Phys. Lett., Vol. 69, pp.547-549, 1996.
[21] J. Tauc, Amorphous and Liquid Semiconductors, chap. 5, Plenum Press, pp. 175, 1974.
[22] J. Kanicki, “Amorphous and Microcrystalline Semiconductor Devices Volume Ⅱ : Materials and Device Physics,” Chap.5, Artech House, 1992.
[23] G. H. Chen, “Design and fabrication of alternating current a-SiC:H thin-film light-emitting diodes,”M. S. Thesis, NCU, Taiwan, R.O.C., 2005.

指導教授

洪志旺(Jyh-Wong Hong)

審核日期

2007-7-19

推文