850nm光波段次兆赫波高功率、高效能光電發射器

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姓名

邱治恒(Chih-Heng Chiu) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

850nm光波段次兆赫波高功率、高效能光電發射器
(High power and high efficiency Sub-THz Photonic-Transmitters at 850nm wavelength)

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摘要(中)

在本論文的研究中我們證實了一個理想的光電發射器，他是整合了低溫成長砷化鎵(LTG-GaAs)為基準的分離式傳輸複合光二極體(STR-PD)和一個槽孔式的微波天線。而利用超快速飛秒光脈衝以及連續波光訊號的照射下，我們的元件幅射出依個強而有利的電脈衝訊號(最大功率4.5mW)而不需要使用Si-lens。而且由傅立葉轉換紅外光譜儀(FTIR)量測之頻譜可以明顯的發現，在我們所設計的槽孔式天線共振頻率為500GHz 的地方我們有最大的功率為300W，與傳統的LTG-GaAs 基準的光電發射器相比，我們的元件在高外部電場(>50kV/cm)操作下時THz 功率並不會出現飽和的限制。

摘要(英)

We demonstrate a novel photonic transmitter, which is composed of a low-temperature-grown GaAs (LTG-GaAs) based separated-transportrecombination photodiode (STR-PD) and a micromachined slot antenna. Under femto-second optical pulse illumination and Continuous-Wave(CW) illumination, this device radiates strong electrical pulses (4.5mW peak power) without the use of a Si-lens. It can be observed in the Fourier Transform Infrared Spectrometer (FTIR) spectrum of radiated pulses that a significant resonance, with a peak power of approximately 300W peak power, occurs at 500GHz, which corresponds to the designed resonant frequency of the slot antenna. The saturation problem related to the output THz power that occurs with the traditional LTG-GaAs based photonic-transmitters when operated under high external applied electrical fields (>50kV/cm) has been eliminated by the use of our device.

關鍵字(中)

★ 次兆赫波
★ 分離式傳輸復合行波式光二極體
★ 天線

關鍵字(英)

★ antenna
★ STR-PD
★ Sub-THz

論文目次

目錄
摘要 I
Abstract II
致謝 III
目錄 V
圖目錄 VIII
表目錄 XII
第一章簡介 1
1-1 850nm光波段的光通訊系統 2
1-2兆赫波的應用 5
1-3論文架構 7
第二章光檢測器原理與天線結構 9
2-1光二體簡介 9
2-2行波式光二極體原理 11
2-2-1行波式光二極體等效電路 11
2-2-2行波式光二極體頻寬限制 13
2-3傳統的PIN與低溫成長砷化鎵光二極體之磊晶結構原理與問題 17
2-4分離式傳輸復合行波式光二極體 20
2-5吸光層最佳化設計之單載子傳輸行波式光二極體 23
2-6簡略介紹天線結構 27
第三章主動及被動元件之設計製作 29
3-1 光檢測器設計模擬 29
3-2 光檢測器磊晶設計 34
3-3 側向注入光電發射器製作流程 36
3-3-1曝光顯影製程 36
3-3-2 N-contact金屬化製程 37
3-3-2主動區蝕刻 38
3-3-3 P-contact金屬化製程 39
3-3-4快速熱回火 40
3-3-5元件區蝕刻 40
3-3-6平坦化與絕緣 41
3-3-7金屬導線連接線 42
3-3-8試片研磨與背蝕刻 43
3-3-8元件切割 44
3-4 垂直注入光電轉換器製作流程 46
3-4-1 P-contact金屬化製程 46
3-4-2 主動區蝕刻及N-contact金屬化製程 47
3-4-3快速熱回火及元件區蝕刻 47
3-4-4平坦化與絕緣 48
3-4-5金屬導線連接線 48
3-4-6試片研磨、背蝕刻以及元件切割 49
3-4-7被動元件的金屬化製程 50
3-4-8電路保護及電鍍區定義 51
3-4-9導電層製程 52
3-4-10電鍍製程 52
3-4-11 Flip-chip bound製成 54
第四章量測討論 60
4-1 DC量測 60
4-2 量測系統 61
4-2-1 pulse量測系統 61
4-2-2 CW量測系統 63
4-3量測結果與討論 67
4-3-1 Pulse量測結果分析及說明 67
4-3-2 Continuous-Wave(CW)量測結果分析及說明 70
4-3-2 Pulse量測以及CW量測結果比較 72
第五章結論 76
5-1 總結 76
5-2 未來方向 76
參考資料 77

參考文獻

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指導教授

許晉瑋(Jin-Wei Shi)

審核日期

2007-7-23

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