鋯鈦酸鉛壓電式微重量感測器

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姓名

謝東廷(Dung-ting Shie) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

鋯鈦酸鉛壓電式微重量感測器
(Development of PZT Piezoelectric Sensor for Microbalance)

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摘要(中)

本研究使用溶膠凝膠法(sol-gel method)製備鋯鈦酸鉛(PZT)壓電感
測晶片。利用鋯鈦酸鉛薄膜的壓電特性，經由外加電壓使壓電薄膜產生振動，作為微重量感測元件。X-Ray 繞射實驗顯示出壓電薄膜擁有單一鈣鈦礦晶格結構，並藉由直流量測及高頻交流阻抗量測，來分析壓電感測晶片電流密度、極化特性及共振特性。本研究進而藉由微製程技術使晶片微小化，提升晶片感測的靈敏度，並將感測系統加以整合，成為高靈敏度及穩定的微重量感測系統，未來將提供在大腸桿菌之重量感測，加以應用於食品及生物醫學感測領域。

摘要(英)

In this research, microbalance devices were developed with
piezoelectric material to measure biomass based on change of resonant frequency. The sensor structure consists of a square piezoelectric PZT thin film. The Pb1.2(Zr0.52Ti0.48)O3 (PZT) thin film was prepared on Pt/Ti/SiO2/Si surface by sol-gel coating method. We designed different sizes of working area (50 × 50 μm2, 100 × 100μm2, 250 × 250μm2, 400 × 400μm2) and verified piezoelectric properties of these PZT devices. The crystallization and microstructure of the PZT thin films were characterized by X-ray diffraction and scanning electron microscopy (SEM). In this result, the PZT thin film annealed at 700℃ for 50 min showed single-phase perovskite peaks. SEM micrograph revealed that the PZT film with thickness of about 600 nm has uniform microstructure without any cracks. In the electrical properties, the leakage current density rose as the piezoelectric working areas increased. The C-V property exhibited complete butterfly patterns, whose symmetry increased with increasing piezoelectric working areas. Besides, the tunability at 250 × 250μm2 working area was maximum, hence it has excellent piezoelectric characteristic. Further, we used potassium hydroxide (KOH) wet etching technique to reduce the backside thickness.This device has great potential for biomolecular detection.

關鍵字(中)

★ 壓電感測器
★ 鋯鈦酸鉛

關鍵字(英)

★ Piezoelectric
★ PZT

論文目次

中文摘要 I
Abstract II
致謝 III
目錄 IV
第一章前言 1
1-1 生物感測器介紹 1
1-2 石英晶體微天平(QCM)介紹 2
1-2-1 壓電特性介紹 2
1-2-2 石英晶體介紹 3
1-2-3石英晶體微天平(QCM)原理 6
1-3 鋯鈦酸鉛PZT鐵電材料 8
1-3-1 鐵電特性介紹 8
1-3-2 鋯鈦酸鉛(PZT)鐵電材料介紹 12
1-3-3 鋯鈦酸鉛(PZT)鐵電材料應用 16
1-4 共振電路介紹 17
1-4-1 並聯諧振電路 17
1-4-2 串聯諧振電路 19
1-4-3 震盪電路 21
1-4-3-1 LC 震盪原理 21
1-4-3-2 CMOS 反相器振盪電路 23
第二章研究背景 25
2-1 研究動機 25
2-2 研究目標 26
第三章壓電感測器製作 27
3-1 壓電感測器製作 27
3-1-1感測晶片結構 27
3-1-2 感測晶片光罩設計 28
3-1-2 感測晶片製作 30
3-1-2-1 基板的選取與處理 30
3-1-2-2 下電極製作 31
3-1-2-3 壓電薄膜PZT備製 32
3-1-2-4 上電極製作 34
3-1-2-5 感測晶片製程參數表 37
3-1-3 晶片製作流程圖 40
3-2 矽基板背部蝕刻製作 42
3-2-1 矽基板背部蝕刻光罩設計 43
3-2-2 晶片背部蝕刻製作 44
3-2-2-1 矽基板背部蝕刻製作 44
3-2-2-2 背部蝕刻製程參數表 46
3-2-2-3 背部蝕刻製作流程圖 47
3-3 微流道設計 48
3-4 阻抗量測特性 50
3-5 共振電路介紹 51
3-5-1 甚高頻(VHF)考畢茲型振盪電路 51
第四章實驗結果與討論 53
4-1 壓電感測晶片之備製 53
4-1-1 壓電薄膜表面形貌分析 56
4-1-1-1 PZT薄膜厚度 57
4-1-2 壓電薄膜晶格結構分析 58
4-1-2-1 熱分解條件對PZT薄膜之影響 62
4-1-2-2 高溫退火對PZT薄膜之影響 65
4-1-2-3 確定PZT薄膜製程條件 72
4-2 未蝕刻壓電感測器電性分析 73
4-2-1 漏電流特性量測分析 73
4-2-2 電容－電壓量測分析 77
4-2-3 阻抗量測分析 85
4-3 壓電感測器背部蝕刻製作與阻抗量測分析 91
4-3-1 壓電感測晶片背部蝕刻製作 91
4-3-1-1 矽基板背部蝕刻製作 91
4-3-1-2 晶片表面二氧化氮去除 95
4-3-2 蝕刻後壓電感測晶片阻抗量測分析 101
4-4 壓電感測系統實現 103
4-4-1 共振電路 103
4-5感測應用結果分析 105
4-5-1壓電感測系統整合 105
第五章結論 110
參考文獻 112

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指導教授

蔡章仁(Jang-zern Tsai)

審核日期

2009-8-26

推文