參考文獻 |
[1] H. Morkoc, S. Strite, G.-B. Gao, M.-E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994)
[2] S.-Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 2014 (1998)
[3] M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996)
[4] Y.-F. Wu, B.-P. Keller, P. Fini, S. Keller, T.-J. Jenkins, L.-T. Kehias, S.-P. Denbaars, and U. -K. Mishra, IEEE Electron Device Lett. 19, 50 (1998)
[5] U.-K. Mishra, L.-S. Thomas, E. Kazior, and Y.-F. Wu , IEEE vol.96, pp. 2 ,(2008).
[6] O. Ambacher, Journal of Physics Vol.31, pp.2653-710 ,(1998).
[7] J.-S. Foresi and T.-D. Moustakas, Appl. Phys. Lett. 82, 2859 (1993)
[8] M.-E. Lin, Z. Ma, F.-Y. Huang, Z.-F. Fan, L.-H. Allen, and H. Morkoc, Appl. Phys. Lett. 64, 1003 (1994)
[9] S. Ruvimov, Z. Lilliental-Weber, J. Washburn, K.-J. Duxstad, E.-E. Haller, Z.-F. Fan, S.-N. Mohammad, W. Kim, O. Aktas, A.-E. Botchkarev, and H. Morkoc¸, Appl. Phys. Lett. 69, 2582 (1996)
[10] B.-P. Luther, S.-E. Mohney, T.-N. Jackson, M. Asif Khan, Q. Chen, and J.-W. Yang, Appl. Phys. Lett. 70, 57 (1997)
[11] D.-F. Wang, F. Shiwei, C. Lu, A. Motayed, M. Jah, and S.-N. Mohammad, J. Appl. Phys., 89, 6214 (2001)
[12] V. Kumar, L. Zhou, D. Selvanathan, and I. Adesida, J. Appl. Phys., 92, 1712 (2002)
[13] Z. Fan, S.-N. Mohammad, W. Kim, O. Aktas, A.-E. Botchkarev, and H. Morkoc¸ Appl. Phys. Lett. 68 , 1672 (1996)
[14 ] M. Zhao, R. L. Jiang, P. Chen, D. J. Xi, H. Q. Yu, B. Shen, R. Zhang, Y. Shi, S. L. Gu,and Y. D. Zheng, Appl. Phys. Lett., 79, 218 (2001)
[15] B. Luo, F. Ren, R.-C. Fitch, J.-K. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, A. G. Baca, R.-D. Briggs, D. Gotthold, R. Birkhahn, B. Peres, and S. J. Pearton, Appl. Phys. Lett. 82, 3910 (2003).
[16] F. Braun, Annal. Phys. Chem. 153, 556 (1874)
[17] W. Schottky, Naturwissenschaften 26, 843 (1938)
[18] H. Morkoc, Nitride Semiconductors and Devices, Springer, pp.196 (1999)
[19] R. Williams, Modern GaAs Processing Methods, Artech House, Boston London, pp.235 (1990)
[20] 陳銘勝,” 氮化鎵發光二極體製程技術之研究”,中央大學電機所碩士班論文,(2004).
[21] R. Gaska, A. Osinsky, J.-W. Yang, and M.-S. Shur, IEEE Electron Device Letters, vol.19, pp. 3, (1998).
[22] J.-W. Johnson, J. Gao, K. Lucht, J. Williamson, Nitronex Corporation, NC 27606.
[23] C.-J Tun, C.-H. Kuo, Y.-K. Fu, C. W. Kuo, C.J. Pan, and G. C. Chi, Appl. Phys. Lett. 90, 212109 (2007).
[24] 鄭紹章,” 氮化鋁鎵/氮化鎵高電子遷移率電晶體製作於矽基板與藍寶石基板之特性比較與應用電路”,中央大學電機所碩士班論文,(2008).
[25] Y. Han, S. Xue,T. Wu, Z.Wu, W. Guo, Y. Luo , Journal of Vacuum Science & Technology ,vol. 22, pp. 407-412,(2004).
[26] N. Chaturvedi, U. Zeimer, J. Würfl and G. Tränkle, Semicond. Science Technology, vol.21, pp. 175-179, (2006).
[27] M.-E. Lin, Z. Ma, F.-Y. Huang, Z.-F. Fan, L.-H. Allen, Appl. Phys. Lett, vol.64, pp.21,(1994)
[28] N. Miura, T. Nanjo , M. Suita , T. Oishi , Y. Abe , T. Ozeki , H. Ishikawa, T. Jimbo, Solid-State Electronics, vol.48, pp.689–695,(2004).
[29] L.-S. Yu, D.-J. Qiao, Q.-J. Xing, and S.-S. Lau, Applied Physics Letters, vol 73, (1998).
[30] 林若璇,” 氮化鎵基材漏電流行為與材料品質之奈米尺度研究”,中央大學電機所碩士班論文,(2008).
[31] 汪建民,” 材料分析”,初版(1998).
[32] D. Selvanathan, F.-M. Mohammed, A. Tesfayesus and I. Adesida, J. Vac. Sci. Technol. B 22, 5 (2004)
[33] F. Roccaforte, F. lucolano, F. Giannazzo, A. Alberti, and V. Raineri, J. Appl. Phys. 100, 123706 (2006).
[34] T. Ohki, M. Kanamura, T. Takahashi, T. Kikkawa, K. Joshin, and N. Hara, Phys. Status Solidi C 2, 2529 (2005).
[35] N.-A. Papanicolaou, A. Edwards and M.-V. Rao, J. Mittereder and W.-T. Anderson, J. Appl. Phys. 87, 380 (2000).
[36] K.-P. Hsueh, K.-C. Chiang, Y.-M. Hsin, and C.-J. Wang, Appl. Phys. Lett. 89, 191122 (2006).
[37] S. Ruvimov, Z. Liliental-Weber, J. Washburn, K.-J. Duxstad, E.-E. Haller, Z.-F. Fan, S.-N. Mohammed, W. Kim, A.-E. Botchkarev, and H. Morkoc, Appl. Phys. Lett. 69, 1556 (1996).
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