單晶積體化之高速、低耗能850nm波段面射型雷射和光檢測器的應用

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徐天慶(Tien-Ching Hsu) 查詢紙本館藏

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論文名稱

單晶積體化之高速、低耗能850nm波段面射型雷射和光檢測器的應用
(High-Speed, Low-Power-Consumption, 850nm VCSEL and Monolithic Integrated PD Module for The Application of Optical Interconnect)

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★ 具有大面積且在高靈敏度、低暗電流操作下具有頻寬增強效應的10 Gbit/sec平面式 InAlAs 累增崩潰光二極體	★ 應用串接式技術達到超高飽和電流-頻寬乘積(7500mA-GHz,75mA,100GHz)的近彈道傳輸光偵測器
★ 利用鋅擴散方式在半絕緣(GaAs)基板上製作可室溫操作、高速且低漏電流的InAs光檢測器	★ 應用超寬頻光子傳送混波器達到遠距分佈及調變的20Gbit/s無誤碼無線振幅偏移調變資料傳輸於W-頻帶
★ 具有同時高速資料傳輸及產生直流電功率的砷化鎵/磷化銦鎵的雷射功率轉換器	★ 超高速(>1Gb/s)可見光發光二極體應用於塑膠光纖通訊及內部載子動力學的研究
★ 具有超低耗能,傳輸資料量比值在850nm波段超高速(40 Gb/s)面射型雷射	★ 超高速(~300GHz)光偵測器的製造與其在毫米波生物晶片上的應用
★ 超高速覆晶式(>300GHz)高功率(~mW)光偵測器製作與量測	★ 具有單空間模態,低發散角,高功率的鋅擴散二維850nm面射型雷射陣列
★ 應用於850到1550 nm波長光連結且具有高速,高效率和大面積的p-i-n光偵測器	★ 應用於中距離(2km)至短距離光連結知單模態、高速、高輸出光功率的850nm波段面射型雷射
★ 應用在光連接具有高可靠度高速(>25Gbit/sec) 850光波段的垂直共振腔雷射	★ 具有高可靠度/高功率輸出與直流到次兆赫茲 (≧300GHz)操作頻寬的超高速光偵測器和其覆晶式封裝設計與分析

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摘要(中)

我們證明了在砷化鎵/砷化鋁鎵（GaAs/AlGaAs）的基板上，完成了高速單戴子傳輸光檢測器和使用鋅擴散的面射型雷射的積體化整合，面射型雷射有很高的資料傳輸與功率消耗的比值(2.4Gbps/mW)，而單載子傳輸光檢測器可在無外加偏壓下操作，如此一來可應用在雙向傳輸的光連結技術上。積體化的單戴子傳輸光檢測器量子效率可以達到46.7%，也有很高的3dB 頻寬(13Gbit/s），且從低到高的光電流(0.1 to 0.4mA)，都可以打開10Gbit/s的眼圖，不需要額外的驅動電路。而積體化的面射型雷射也可以通過10Gbit/s的眼圖，在很低的操作電流下(3mA)，而且只需要很低的交流調變的高頻訊號(0.25Vp-p驅動)就可以打開眼圖。

摘要(英)

We demonstrate the monolithic integration of high-speed GaAs/AlGaAs based uni-traveling carrier photodiode (UTC-PDs) with Zn-diffusion vertical-cavity surface-emitting lasers (VCSELs) both with very-high data-rate/power-consumption ratio for the application to bi-directional optical interconnect Under zero-bias operation, the integrated UTC-PD exhibits reasonable external efficiency (46.7%), wide 3-dB bandwidth (13GHz) and 10Gbit/sec eye-opening from low to high output photocurrents (0.1 to 0.4mA) without integrating with any active integrated circuits (ICs). Regarding with the integrated Zn-diffusion VCSEL, it can achieve 10Gbit/sec eye-opening under a pre-bias current as small as 3mA and a very-small radio-frequency (RF) driving voltage （0.25Vp-p driving-voltage）. The data-rate/power-consumption ratio of the VCSEL is extremely-high, as much as 2.4Gbps/mW.

關鍵字(中)

★ 光檢測器
★ 面射型雷射

關鍵字(英)

★ PD
★ 850nm VCSEL

論文目次

目錄
摘要 I
Abstract II
致謝 III
目錄 V
圖目錄 VIII
表目錄 XIII
第一章序論 1
1-1 多媒體時代 1
1-2 光連結應用 1
1-3 面射型雷射簡介 5
1-4 光檢測器簡介 7
1-5 單晶積體化VCSEL和單載子傳輸光偵測器 7
第二章理論 8
2-1 VCSEL製程基本理論 8
2-1-1. 鋅擴散於DBR 8
2-1-2. VCSEL的選擇性水氧化理論 11
2-1-3. 發散角 14
2-2 無外加偏壓的UTC光二極體之原理介紹 16
2-2-1 傳統的PIN光二極體之缺點 16
2-2-2單載子傳輸光二極體簡介 18
2-2-3無外加偏壓之單載子傳輸光二極體簡介 18
第三章實驗 21
3-1 磊晶結構 21
3-2 VCSEL和UTC-PD 24
3-3 鋅擴散製程 25
3-4 水氣氧化 28
3-5 製作電極以及金屬回火(Annealing) 30
3-6 平坦化及製作金屬接線 35
第四章量測結果與討論 39
4-1 VCSEL量測系統 39
4-1-1 電流對電壓(I-V)的量測 39
4-1-2 光功率對電流(L-I)之量 39
4-1-3 頻譜(Spectrum) 之量測系統 40
4-1-4 頻寬(Bandwidth)之量測系統 40
4-1-5 眼圖(Eye pattern)之量測系統 41
4-2 VCSEL量測結果 41
4-2-1 電流對電壓（I-V）曲線 41
4-2-2 輸出光功率對電流（L-I）曲線 42
4-2-3 光頻譜(Optical spectra)圖 44
4-2-4 頻寬(Bandwidth) 和D係數（D-factor） 44
4-2-5 S11、S21參數模擬 47
4-2-6 K參數(K parameter) 50
4-2-7 眼圖(eye pattern)量測 52
4-3 UTC-PD量測系統 53
4-3-1 電流對電壓(I-V)的量測 53
4-3-2 頻寬(Bandwidth)之量測系統 54
4-3-3 眼圖(Eye pattern)之量測系統 55
4-4 UTC-PD量測結果 56
4-4-1 電流對電壓（I-V）曲線 56
4-4-2 頻寬(Bandwidth) 之量測結果 57
4-4-3 S11、S21參數模擬 58
4-4-4 眼圖(Eye pattern)之量測結果 62
第五章結論與未來研究 63
參考文獻 64

參考文獻

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指導教授

許晉瑋(Jin-Wei Shi)

審核日期

2009-7-10

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