熱化學氣相沉積法製備橫向奈米碳管之研究

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何萬青(Wan-Ching Ho) 查詢紙本館藏

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論文名稱

熱化學氣相沉積法製備橫向奈米碳管之研究
(Properties of lateral carbon nanotube grown by thermal CVD)

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摘要(中)

摘要
實驗利用常壓熱化學氣相沉積(Thermal Chemical Vapor Deposition, Thermal CVD)成長橫向奈米碳管。配合I-line 微影技術，及金屬層蝕刻定義元件形狀。利用單因子實驗，設定不同操作參數，如製程溫度、乙烯在碳源中比例、甲烷流量、製程時間、不同載流氣體種類等，而得到數量、形貌、品質優良橫向奈米碳管，並結合微影
定義合成元件結構。並利用拉曼散射光譜(Raman Spectroscopy)分析，判定奈米碳管石墨化程度好壞。橫向奈米碳管元件利用I-V 電性量測分析，探討元件電性穩定性。並透過公式推算，計算元件電阻。由於元件成長橫向奈米碳管之催化劑為鎳金屬層，亦藉由本實驗設計結構，計算鎳金屬層和橫向奈米碳管之接觸電阻問題。
奈米碳管之物理特性廣受各界的期待，但由於成長定位方式，及製程相容之不成熟，故奈米碳管之應用產品仍在實驗階段。本次實驗成功利用不同製程參數，控制橫向奈米碳管的成長數量及品質。利用兼容IC 製程，配合微影定義元件形狀，傳統成長奈米碳管技術成長橫向奈米碳管。也由設計的元件結構合成橫向奈米碳管橋建元件，整
合元件之品質與穩定，對未來奈米碳管之定位與應用盡一分心力。

關鍵字(中)

★ 接觸電阻
★ 拉曼散射光譜
★ 熱化學氣相沉積法
★ 奈米碳管

關鍵字(英)

★ contact resistance
★ Raman Spectroscopy
★ Thermal CVD
★ carbon nanotube

論文目次

目錄
摘要……………………………………………………………………..Ⅰ
目錄……………………………………………………………………..Ⅱ
表目錄…………………………………………………………………..Ⅳ
圖目錄…………………………………………………………………..Ⅴ
第一章緒論…………………………………………………………..1
1.1 前言………………………………………………………….1
1.2 研究動機………………………………………..………….4
第二章奈米碳管之簡介..……………………………………………6
2.1 奈米碳管之製備方法…………………………………….. 6
2.2 熱化學沉積法……………………………………………..10
2.3 奈米碳管的排列結構及電性……………………………..13
第三章實驗方法………………………...………………………..16
3.1 利用熱裂解化學氣相沉積法成長奈米碳管……………..16
3.2 橫向奈米碳管之成長…………………………………....20
3.3 整合橫向奈米碳管到元件製作…………………………..22
3.4 拉曼散射……………………………….………………...24
3.5 橫向成長奈米碳管元件之電性量測….………………...26
3.6 實驗儀器簡介……………………………………………..29
第四章實驗結果與討論…………………………………………33
4.1 奈米碳管的結構分析與鑑定…..………………………..33
4.2 橫向結構與成長橫向奈米碳管…………………………..35
4.3 成長目標………………………………….……………...38
4.4 實驗參數對橫向奈米碳管石墨化的影響及電性分析....40
4.5 不同乙烯在碳源中比例的影響….……………………...43
4.6 不同甲烷流量之影響………….………………………...53
4.7 利用氮氣為載氣之影響………….……….……………..58
4.8 利用微波電漿化學氣相沉積成長橫向奈米碳管..……..69
第五章結論………………………………………………………75
參考文獻………………………………………………………………76

參考文獻

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指導教授

黃豐元(Fuang-Yuan Huang)

審核日期

2005-7-4

推文