Ka頻段低功耗低雜訊放大器之設計與實現

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：87

、訪客IP：3.144.17.45

姓名

吳尚儒(Shang-Ju Wu) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

Ka頻段低功耗低雜訊放大器之設計與實現
(Design and Implementation of Ka-Band Low Power Consumption Low Noise Amplifier)

相關論文

★ 應用於筆記型電腦數位電視單極天線之研製	★ 應用於數位機上盒與纜線數據機之電纜多媒體傳輸標準多工濾波器
★ 印刷共面波導饋入式多頻帶與超寬頻天線設計	★ 微波存取全球互通頻段前向匯入式功率放大器與高效率Class F類功率放大器暨壓控振盪器電路之研製
★ 應用於矽基功率放大器與混頻器之傳輸線型變壓器研究	★ 應用於V-頻段射頻收發機前端電路之低功耗源極注入式混頻器之研製
★ 應用積體電路上方後製程與整合被動元件於互補式金氧半導體製程之系統封裝研究	★ 應用fT-倍頻電路架構於毫米波壓控振盪器與注入鎖定除頻器之研製
★ 應用傳輸線型變壓器於X/K–Ka/V頻段全積體整合之寬頻互補式金氧半導體功率放大器研製	★ 應用於K / V 頻段低功耗混頻器之研製
★ 應用於K/V頻段之低功耗CMOS低雜訊放大器之研究	★ 應用於5-GHz CMOS射頻前端電路之低電壓自偏壓式混頻器與高線性化功率放大器之研製
★ 應用於 K 頻段射頻接收機之寬頻低功耗 CMOS 低雜訊放大器之研製	★ 應用磁耦合變壓器於K頻段之低功耗互補式金氧半導體壓控振盪器研製
★ 應用於K頻段之單向化全積體整合功率放大器與應用於V頻段之寬頻功率放大器研製	★ 應用於C/X頻段全積體整合之互補式金氧半導體寬頻低功耗降頻器與寬頻功率混頻器之研製

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

[檢視]

[下載]

本電子論文使用權限為同意立即開放。
已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。
請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。

摘要(中)

本論文主要研究內容為Ka頻段射頻毫米波前端電路-低雜訊放大器之設計，所設計的晶片是利用TSMC 0.18 ?m CMOS製程研製。低雜訊放大器使用兩級疊接式架構來實現，前級針對低雜訊做匹配，後級則是以取得高增益為目標。電路在設計時加入一個串聯電感在共源極和共閘極電晶體之間來提高電晶體的fT值，進而使電路整體增益增加，雜訊減少。
所設計之晶片其量測結果如下，當總功率消耗為4.56 mW時，Ka頻段低雜訊放大器增益在29.1 GHz達到11.24 dB，雜訊指數為8.09 dB，輸入和輸出反射損耗在28 GHz皆大於7.1 dB。輸入1-dB壓縮點和三階截斷點在29 GHz分別為-25 dBm和-16 dBm。當總直流功耗為7.95 mW時，在29.4 GHz得到的小信號增益為16.5 dB，最小雜訊指數在28 GHz為6.92 dB，輸入和輸出反射損耗在28 GHz分別為5.35 dB和11.7 dB。晶片面積為0.66 × 0.93 mm2。

摘要(英)

The subject of paper is to present the low noise amplifier of RF front-end circuits for Ka-band receiver being implemented on TSMC 0.18-μm CMOS technology. The low noise amplifier is implemented by a cascoding two stages. The first stage is designed for low noise performance while the second stage is matched for high gain. The circuit design by adding a series inductor between the CS and CG transistors to improve the transistors’ fT for increasing the circuit’s overall gain, and reducing the noise figure (NF).
The measured results of the designed circuit are illustrated as follows: when the total DC power consumption is 4.56 mW, the Ka-band LNA achieve a gain of 11.24 dB at 29.1 GHz, noise figure of 8.09 dB, and the input/output return losses are more than 7.1 dB at 28 GHz. The input 1-dB power gain compression point (P1dB) and the input third-order interception point (IIP3) at 29 GHz occur at -25 dBm and -16 dBm, respectively. When the total DC power consumption is 7.95 mW, the obtained small signal gain is 16.5 dB at 29.4 GHz and minimum NF of 6.92 dB at 28 GHz. The input/output return losses are 5.35 dB and 11.7 dB at 28 GHz. The occupied chip area is 0.66 × 0.93 mm2.

關鍵字(中)

★ Ka頻段
★ 低雜訊放大器

關鍵字(英)

★ Ka-band
★ low noise amplifier

論文目次

Chinese Abstract I
Abstract II
Acknowledgement III
Table of Contents V
List of Figures VII
List of Tables IX
Chapter 1 1
Introduction 1
1.1 The Microwave circuits research background 1
1.2 Motivation 2
1.3 Achievements 4
1.4 Thesis Organization 4
Chapter 2 6
Principles of Low Noise Amplifier Design 6
2.1 Introduction 6
2.2 Transistor Modeling 7
2.3 Source of Noise 9
2.3.1 Thermal Noise 10
2.3.2 Shot Noise 11
2.3.3 Flicker Noise 12
2.4 Important Parameters of the LNA 12
2.5 Impedance Matching 18
Chapter 3 19
Ka-Band Low Noise Amplifier 19
3.1 Introduction 19
3.2 Circuit Structure 19
3.3 Design Flow 23
3.4 Layout Consideration 24
3.5 Simulated and Measured Results 26
3.6 Summary 37
Chapter 4 38
Conclusion 38
4.1 Conclusion 38
4.2 Future Work 39
References 40

參考文獻

[1] IEEE 802.16.2-2001, “IEEE recommended practice for local and metropolitan area networks–coexistence of fixed broadband wireless access systems,” Sep. 2001.
[2] C. H. Doan, S. Emami, A. M. Niknejad, and R. W. Brodersen, “Millimeter-wave CMOS design”, IEEE J. Solid-state Circuits, vol. 40, pp. 144-155, Jan. 2005.
[3] T. Manku, “Microwave CMOS-device physics and design”, IEEE J.
Solid-State Circuits, vol. 34, pp. 277-285, March 1999.
[4] H. T. Friis, “Noise figure of radio receivers,” Proceedings on IRE, vol. 32, no. 7, pp. 419-422, July 1944.
[5] B. Razavi, “RF Microelectronics, Prentice Hall”, Upper Saddle River, 1998.
[6] J. Rollett, “Stability and power gain invariants of linear two ports”, IRE Transactions on Circuit Theory, CT-9, pp. 29-32, March 1962.
[7] T. Yao, M. Q. Gordon, K. K. W. Tang, K. H. K. Yau, M.-T. Yang, P. Schvan, and S. P. Voinigescu, “Algorithmic design of CMOS LNAs and PAs for 60-GHz radio”, IEEE Journal of Solid-State Circuits, vol. 42, no. 5, May 2007.
[8] D. K. Shaeffer and T. H. Lee, “A 1.5-V, 1.5 GHz CMOS low-noise amplifier,” IEEE J. of Solid-State Circuits, vol. 32, no. 5, pp. 745-759, May 1997.
[9] X. Guan and A. Hajimiri, “A 24-GHz CMOS front end”, IEEE J. Solid-State Circuits, vol. 39, no. 2, pp. 368-373, Feb. 2004.
[10] K.-W. Yu, Y.-L. Lu, D.-C. Chang, V. Liang, and M. F. Chang, “K-band low-noise amplifiers using 0.18 µm CMOS technology”, IEEE Microwave Wireless Component Letter, vol. 14, no. 3, pp. 106-108, March 2004.
[11] S.-C. Shin, M.-D. Tsai, R.-C. Liu, K.-Y. Lin, and H. Wang, “A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 µm CMOS technology”, IEEE Microwave Wireless Component Letter, vol. 15, no. 7, pp. 448-450, July 2005.
[12] S.-H. Yen and Y.-S. Lin, “Ka-band low noise amplifier using standard 0.18 ?m CMOS technology”, Electronics Letters, vol. 42, no.16, August 2006.
[13] B. Afshar and A. M. Niknejad, “X/Ku band CMOS LNA design techniques”, Proceedings of CICC, pp. 389-392, 2006.
[14] M. A. T. Sanduleanu, G. Zhang, and J. R. Long, “31-34GHz low noise
amplifier with on-chip microstrip lines and inter-stage matching in 90-
nm baseline CMOS”, Proceedings of RFIC, pp. 143-146, 2006.
[15] E. Adabi, B. Heydari, M. Bohsali, and A. M. Niknejad, “30 GHz CMOS low noise amplifier”, Proceedings of RFIC, pp. 625-628, 2007.
[16] Y.-L. Wei, S.-H. Hsu, and J.-D. Jin, “A low-power low-noise amplifier for K-band applications”, IEEE Microwave Wireless Component Letter, vol. 19, no. 2, Feb. 2009.
[17] Sheng-Chi Chen, “Implementation of RF Receiver Front-End Circuits for Ka-Band Applications,” Master thesis, National Central University, 2008.
[18] Kai-Yun Lin, “Implementation of Ka-Band and V-Band Low Noise Amplifier and Broadband Amplifier,” Master thesis, National Central University, 2006.
[19] Hsing-Lung Tu, “The Study on Wireless Transceiver Front-end Circuits and Related Passive Device,” Master thesis, National Central University, 2005.
[20] Wen-Yuan Liu, “Analysis, Design, and Realization of Ka band Low Noise Amplifier and Coplanar Waveguide Lowpass Filter,” Master thesis, National Central University, 2004.

指導教授

邱煥凱(Hwann-Kaeo Chiou)

審核日期

2010-1-11

推文