圖案化藍寶石基板之濕式蝕刻

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姓名

吳麗雲(Li-Yun Wu) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

圖案化藍寶石基板之濕式蝕刻
(Wet etching of patterned sapphire substrates)

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摘要(中)

摘要
本論文主要探討使用化學濕式蝕刻法來蝕刻藍寶石（sapphire）基板，其優點在於其製程簡單、成本低廉、且蝕刻速度快，雖然藍寶石基板具有極佳物理及化學穩定性，不易和化學溶液起反應，但是本研究已成功的蝕刻藍寶石基板，且找到最佳之化學溶液配比，不僅蝕刻速率快且表面品質佳。影響藍寶石基板的蝕刻速率有化學溶液配比、溫度、遮罩圖案方向、藍寶石基板之晶格方向等因素，本文分別探討不同參數對蝕刻速率及表面品質之影響，並且定義出蝕刻的機制。在圖案化藍寶石基板上成長氮化鎵發光二極體結構後，結果顯示，氮化鎵磊晶薄膜品質有明顯提升。在光學特性方面：使用圖案化藍寶石基板成長之氮化鎵薄膜，和沒有製作圖案化藍寶石基板比較：發光效率也提升不少，證實圖案化藍寶石基板除了幫助磊晶品質改善之外，基板上之規則圖案破壞了活性層產生之光線的全反射現象，可以有效提高LED 的發光效率。

摘要(英)

Abstract
In this study, we employed a chemical wet etching method in building the trench pattern on the sapphire substrates. Compared to dry etching,
wet etching had several advantages, such as simpler process, higher etching rate and throughput, and the cost is much lower. Sapphires had excellent physical and chemical stability, and it’s hard to react with the
chemical solutions. Here we had already succeeded in etching the sapphire substrates, and finding out the suitable chemical solutions and working temperature to obtain the optimal etching rate and surface quality.
We also discussed the relationship between etching morphology and sapphire orientations.
GaN light-emitting diodes were deposited on pattern and non-pattern sapphire substrates to reveal the thin film quality and optical performance. Experimental results show the treading dislocation density of epitaxy
layer was decreased obviously. A further Photoluminescence（PL）was measured and peak intensity was found to enlarge substantially for
the LED sample on the pattern sapphire. This could attribute to the reduction of dislocation density, and the multiple scattering of the
emission light at the GaN/patterned sapphire interface changes the angle of propagation of the confined light.

論文目次

目錄頁次
摘要············································I
英文摘要······································· II
致謝·········································· III
目錄··········································· IV
圖表目錄····································· VIII
第一章、序論·····································1
1.1 前言······································1
1.2 材料簡介··································5
1.2.1 氧化鋁單晶······························5
1.2.2 藍寶石基板與氮化鎵磊晶薄膜結構··········5
1.2.3 貫穿式差排形成機制與影響················7
1.3 藍寶石之蝕刻技術························· 12
1.3.1 乾式蝕刻技術··························· 12
1.3.2 濕式蝕刻技術··························· 13
1.3.3 製作圖案化藍寶石之目的··················15
1.4 光學理論基礎······························15
1.5 文獻回顧··································17
1.5.1 藍寶石蝕刻之相關文獻··················· 17
1.5.2 圖案化藍寶石基板之相關文獻············· 18
1.6 研究動機與目的····························20
第二章、實驗方法與檢測························21
2.1 實驗設備··································21
2.1.1 電漿輔助化學化學氣相沉積系統··········· 21
2.1.光罩對準曝光機··························· 22
2.1.3 高密度電漿蝕刻系統······················22
2.1.4 自動控制型高溫加熱爐·········· 23
2.2 實驗流程································· 25
2.3 圖案化藍寶石基板之製作····················30
2.3.1 遮罩材料之選擇························· 30
2.3.2 製作二氧化矽遮罩層····················· 30
2.3.3 藍寶石之濕式蝕刻······················· 31
2.4 材料檢測··································32
2.4.1 掃描式電子顯微鏡······················· 32
2.4.2 原子力顯微鏡分析技術··················· 33
2.4.3 光激發光光譜分析······················· 34
第三章結果與討論··············· 38
3.1 濕式蝕刻之機制····························38
3.2 濕式蝕刻製程參數與蝕刻速率之關係··········39
3.2.1 蝕刻液濃度配比對蝕刻速率的影響··········46
3.2.2 最高藍寶石蝕刻製程條件··················48
3.2.3 藍寶石蝕刻速率與二氧化矽之選擇比········48
3.3 圖案化藍寶石基板對磊晶品質及發光效率之影響57
第四章結論···················61
參考文獻······································63

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指導教授

陳志臣(J. C. Chen)

審核日期

2006-7-8

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