350nm波長光能量輔助矽晶表面光電平滑化

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姓名

陳秉翔(Bing-Siang Chen) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

350nm波長光能量輔助矽晶表面光電平滑化
(350nm Wavelength of Light-Energy-Assisted Photoelectric Silicon Surface Smoothing)

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★ 矽/石英晶圓鍵合之研究	★ 奈米尺度薄膜轉移技術
★ 光能切離矽薄膜之研究	★ 氮矽基鍵合之研究

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摘要(中)

Smart-Cut®技術在SOI 薄膜轉移製程上已被普遍應用，但轉移時氫離子聚合所造成之損傷，至使轉移層上方形成一層粉碎層，且轉移後之單晶矽薄膜的品質，會對後續元件之製作及效能產生影響，因此通常需要在多一道化學機械研磨(CMP)拋光的程序來將此粉碎層移除。
CMP 程序對於粉碎層移除後，使薄膜的均勻度及厚度產生變化，不易達到奈米等級精準度的要求。故為製作奈米等級的單晶矽層SOI 材料，本研究主要目的在於利用蝕刻的方式，透過腐蝕製程，藉由比較不同結晶矽間的腐蝕速率比，來去除此一粉碎層損傷區域，同時達到表面平滑化的效果。
以稀釋之氫氟酸加上雙氧水所調配之蝕刻液，蝕刻粉碎層與轉移單晶矽層會因腐蝕速率差異可作為腐蝕停止層之用。且本實驗發現若同時添加350nm 波長之紫外光(Ultraviolet)照射，能輔助加速蝕刻反應的進行，進而增加粉碎層移除速率，且有效降低矽晶表面粗糙度，達到矽單晶轉移薄膜層表面平滑化之效果。

摘要(英)

Smart-Cut® SOI technology in the layer transfer process has been widelyapplied, but the hydrogen ion implantation causes the injury to make a lattice-defect smash region formed at the top surface. The transfer of single-crystal silicon film quality has an impact on the follow-up components of the production and performance. Therefore, usually needs an extra chemical mechanical polishing (CMP) process to remove the smash region.
CMP process removing the smash region may cause of film uniformity and thickness of the changes, but is difficult to achieve nanometer scale accurate requirements. Therefore, for the production of nano-scale of single-crystal silicon layer SOI materials, the main purpose of this study is using an etching approach. Through the etching process, with different etch-rate with vary crystalline structure, the smash region will be etched out to achieve the effect of smoothing the surface at the same time.
The etching fluid is hydrofluoric acid with hydrogen peroxide diluted. For etching the smash region and the transfer film of the single crystal silicon layer, the different etch-rate is used for keeping complete silicon layer without change. And if added 350 nm wavelength of UV (Ultraviolet) radiation at the same time, etching can be enhanced, thereby increasing the removal rate, to effectively reduce the silicon surface roughness, and then to achieve the effect of single-crystal silicon thin film transfer surface smoothing.

關鍵字(中)

★ 表面平滑化
★ 光能量
★ 矽晶

關鍵字(英)

★ Light-Energy
★ Silicon Surface Smoothing

論文目次

中文摘要………………………………………………………………………..I
英文摘要………………………………………………………………………..II
誌謝…………………………………………………………………………….III
目錄…………………………………………………………………………… IV
圖目錄………………………………………………………………………….VI
表目錄………………………………………………………………………….IX
一、緒論 .......................................................................................................... 1
1.1 研究背景 ..................................................................................................... 1
1.2 研究動機 ..................................................................................................... 2
二、 SOI 薄膜轉移技術及機制 ....................................................................... 4
2.1 氫在矽中的行為 .......................................................................................... 4
2.2 Smart-Cut®薄膜轉移製程及薄化處理和後續平滑化 .............................. 5
2.3 離子佈值之通道效應 ................................................................................. 6
2.4 多晶矽(Poly-Silicon)遮蔽犧牲層 ............................................................... 7
2.4.1 利用多晶矽犧牲層製作超薄SOI ........................................................... 7
2.4.2 多晶矽遮蔽層對表面粗糙度之影響 ...................................................... 7
2.5 現有之單晶奈米絕緣層矽薄膜之平滑技術 ............................................. 8
2.6 蝕刻機制 ..................................................................................................... 9
2.6.1 非等向性濕式蝕刻 ................................................................................ 10
2.6.2 等向性濕式蝕刻 .................................................................................... 11
2.7 紫外光照射對矽晶圓之應用 ................................................................... 11
三、實驗方法與步驟 ..................................................................................... 27
3.1 實驗流程 ................................................................................................... 27
3.1.1 晶圓準備及清洗 .................................................................................... 27
3.1.2 氧化層生成及多晶矽沉積 .................................................................... 27
3.1.3 離子佈植 ................................................................................................ 28
3.1.4 多晶矽蝕刻移除 .................................................................................... 28
3.1.5 晶圓鍵合 ................................................................................................ 28
3.1.6 薄膜轉移 ............................................................................................... 29
3.1.7 SOI 薄膜表面平坦：粉碎層蝕刻 ......................................................... 29
四、實驗結果與討論 ..................................................................................... 34
4.1 多晶矽與二氧化矽之腐蝕速率比較 ....................................................... 34
4.1.1 多晶矽腐蝕情況 ...................................................................................... 34
4.1.2 二氧化矽腐蝕情況 ................................................................................. 35
4.2 SOI 薄膜粉碎層蝕刻及表面平滑化情形 .................................................. 35
4.2.1 蝕刻液無添加紫外光照射之蝕刻情形 ................................................... 35
4.2.2 蝕刻液添加紫外光照射之蝕刻情形 ....................................................... 36
4.3 討論 .............................................................................................................. 37
五、結論 ............................................................................................................. 58
參考文獻 ............................................................................................................. 60

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指導教授

李天錫(Tien-Hsi Lee)

審核日期

2008-6-24

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