利用CBD法製備銅摻雜之硫系列光觸媒材料研究

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郭俊麟(Chun-Lin Kuo) 查詢紙本館藏

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機械工程學系

論文名稱

利用CBD法製備銅摻雜之硫系列光觸媒材料研究
(The Synthesis of Cu-Doped Photocatalyst Materials by Chemical Bath Deposition)

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摘要(中)

本研究利用化學水浴法(Chemical Bath Deposition； CBD)進行可見光光觸媒薄膜之製備，以ITO(Indium–Tin-Oxide)導電玻璃為基材，利用此種製程於基材表面先形成一層AgInS光觸媒薄膜，再利用氯化銅進行銅金屬摻雜。而本研究著重於提升半導體薄膜的光敏化效果，試著改變反應溶液pH值與反應時間之鍍膜參數，並將試片置於真空管狀爐中以300 oC燒結1小時。材料分析部分以X-ray繞射儀(XRD)判別薄膜的晶型結構，利用掃描式電子顯微鏡(SEM)來觀察薄膜表面形貌與元素之半定量分析；並利用電化學量測儀以三極式之方式量測光電流，探討光觸媒的成分組成對光電流之影響。

摘要(英)

The visible-active Photocatalyst thin film of AgInS was deposition on ITO glass and doping Cu by CuCl2 solution by chemical bath deposition (CBD).
The research conditions was change the ph value and reaction time and anneal time of the reaction solution and elevation photo-active of the photocatalyst.
The material structure analysis by XRD and element analysis by scanning electron microscope (SEM) ；The photocurrent measurement by potentiostat and discussion the element compose by photocurrent effect of photocatalyst.

關鍵字(中)

★ 薄膜
★ 光觸媒
★ 化學水浴法

關鍵字(英)

★ Chemical Bath Deposition
★ Photocatalyst
★ CBD
★ Thin film

論文目次

中文摘要………………………………………………………………....I
Abstract…………………………………………………………...……...II
致謝………………………………………………………......................III
表目錄………………………………………………………………….VII
圖目錄 …………………………………………………………….…VIII
符號說明……………………………………………………………..…XI
第一章緒論………………………………..............................................1
1.1 前言………………………………………………………......… 1
1.2 太陽能產氫原理…………….…………………………………..3
1.3 光觸媒發展歷史………………………………………………...6
1.4 文獻回顧………………………………………………………...7
1.4.1 薄膜之製備………………………………………………..7
1.4.2 化學水浴法原理…………………………………………..8
1.4.3 以化學水浴法製備半導體薄膜之文獻回顧……………11
1.4.3.1 Cu2S半導體薄膜文獻回顧……………………....11
1.4.3.2 AgInS半導體薄膜文獻回顧…………………….12
1.5 研究目的……………………………………………………….13
第二章實驗部分 …………………………………………………......14
2.1 實驗參數設定及流程…………….………………………....…14
2.2 實驗藥品材料與實驗裝置.........................................................14
2.2.1 實驗藥品............................................................................14
2.2.1.1 化學水浴法中AgInS之薄膜材料.......................14
2.2.1.2 硫系列薄膜摻雜金屬離子之藥品.......................16
2.2.1.3 電性分析時所使用之電解質溶液.......................17
2.2.2 實驗基材............................................................................17
2.2.3 實驗設備............................................................................17
2.2.4 實驗步驟............................................................................18
2.2.4.1 基材清洗...............................................................18
2.2.4.2 鍍液調配...............................................................19
2.2.4.3 鍍液反應流程.......................................................20
2.3 試片完成後處理……………………………………………….22
2.4 薄膜物性量測分析…………………………………………….22
2.4.1 XRD(X-ray 繞射儀)……………………………………...22
2.4.2 SEM(掃描式電子顯微鏡)………………………………..23
2.4.3 EDS(能量散布質譜儀)…………………………………...24
2.4.4 UV-visible…………………………………………………24
2.4.5 Hall Effect Measurement………………………………….25
2.5 薄膜之電性分析.........................................................................26
2.6 薄膜厚度分析………………………………………………….27第三章結果與討論……………………………………………………28
3.1.1 金屬離子濃度比例對薄膜之影響..........................................29
3.1.2 燒結溫度不同對於薄膜之影響..............................................31
3.1.3 鍍膜層數不同對於薄膜之影響..............................................32
3.1.4 銅摻雜量多寡對薄膜之影響..................................................33
3.1.5 銅離子溶液之pH值對於薄膜之影響.....................................34
第四章結論與未來展望........................................................................36
4.1 結論.............................................................................................36
4.2 未來展望.....................................................................................37
參考文獻..................................................................................................38

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指導教授

洪勵吾(Lih-Wu Hourng)

審核日期

2008-7-21

推文