以奈米異質磊晶術在矽基板上成長的半極性氮化銦鎵量子井

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姓名

徐瑞偉(Jui-wei Hsu) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

以奈米異質磊晶術在矽基板上成長的半極性氮化銦鎵量子井
(Bottom-up nanoheteroepitaxy of semipolar InGaN quantum on Si substrates)

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摘要(中)

本篇研究提出利用氧化鋅奈米柱結構列陣來克服矽基板與氮化鎵材料的熱膨脹問題與晶格匹配問題，我們藉由成功生長直徑150nm、長400nm具方向性、均勻性一致的氧化鋅奈米異質結構列陣，以致做到氮化鎵生長在矽基板技術，由於氧化鋅與氮化鎵的晶格與熱膨脹係數相當且為奈米柱列陣結構，能有效減少氮化鎵磊晶層應力累積與線差排的發生，且氧化鋅具有可化學蝕刻的特性，對於氮化鎵磊晶層的後續加工處理有很大的幫助，除此之外為了達到增加電子、電動復合的效果，我們利用金屬有機化學氣相沉積法在氮化鎵磊晶層表面成長出半極性奈米角錐結構的氮化銦鎵/氮化鎵多重量子井，藉此可降低量子史塔克效應對發光效率的影響。同時，我們也發現氧化鋅中的鋅原子擴散至氮化鎵內，會讓氮化鎵轉變成P型半導體，可進一步製成P-side down 結構LED提升半極性量子井的IQE，由我們的模擬結果可知藉由P-side down 結構可降低Spillover current ratio到0.1以下，且可大幅提升IQE到0.7 ，增加發光效率。

摘要(英)

this paper proposes the use of ZnO nanorods structure to overcome the mismatch of thermal expansion and the atomic lattice between Si and GaN. We have successfully grown diameter 150nm,and 400nm length of zinc oxide nano-rods array that can achieve GaN on Si , ZnO not only exhibits the lattice constant and thermal expansion coefficient similar to GaN, the oxide alloy can also be easily etched in chemical solutions, which greatly saves the subsequent processing cost. In order to increase internal quantum efficiency (IQE) of the emitter grown on Si, we grew semi-polar nano-pyramidal InGaN/GaN multiple quantum wells with uniquely developed conditions. Further, it is found that the GaN grown on ZnO/Si exhibits p-type behaviors, which is due to the diffusion of Zn into GaN. If confirmed, IQE of the semi-polar quantum wells can be further enhanced through a p-side-down structure, our simulation results show P-side down structure reduces Spillover current ratio of 0.1 or less, and can increase IQE to 0.7 to enhance light efficiency.

關鍵字(中)

★ 奈米異質磊晶術
★ 半極性
★ 氮化銦鎵
★ 氮化鎵

關鍵字(英)

★ nanoheteroepitaxy
★ GaN

論文目次

論文摘要 I

ABSTRACT II

誌謝 III

目錄 IV

圖目錄 V

表目錄 VII

英文名詞縮寫對照表 VIII

第一章、簡介 - 1 -

1.1 發光二極體工作原理 - 1 -

1.2研究動機 - 4 -

1.2.1 材料與基板 - 4 -

1.2.2 氮化鎵成長於矽基板 - 5 -

1.2.3 氧化鋅奈米緩衝層 - 8 -

1.3章節簡介 - 13 -

第二章、儀器介紹與試片製程分析 - 14 -

2.1儀器介紹 - 14 -

2.1.1濺鍍(SPUTTERING) - 14 -

2.1.2掃描式電子顯微鏡(SEM) - 14 -

2.1.3有機金屬化學氣相沉積(MOCVD) - 15 -

2.1.4拉曼光譜儀 - 16 -

2.2試片製程 - 17 -

2.2.1氧化鋅奈米柱製程介紹. - 19 -

2.2.2水熱法成長氧化鋅奈米柱原理 - 20 -

2.2.3濺鍍條件對氧化鋅奈米柱之分析 - 22 -

2.3.有機金屬化學氣相沉積(MOCVD)成長氮化鎵於氧化鋅奈柱....... ...- 32 –

2.3.1掃描電子顯微鏡(SEM)與X光繞射(XRD)分析 ............... - 35 –

2.3.2高解析度穿透式電子顯微鏡(HRTEM)分析 .................. - 38 –

2.3.3拉曼光譜分析 .........................................- 41 –

2.3.4. MOCVD成長多層量子井結構及LED元件.... ...............- 42 –

第三章、結構分析與討論 - 44 -

3.1氮化鎵光激發螢光光譜(PL)量測分析 - 44 -

3.2鋅元素擴散於氮化鎵分析 - 47 -

3.2.1能量散佈分析儀(EDS)與二次離子質譜儀(SIMS)量測分析 - 47 -

3.3 P-SIDE DOWN 與 P-SIDE UP 結構分析 - 51 -

3.4半極性氮化鎵/氮化銦鎵多層量子井特性 - 57 -

3.4.1六方晶系之纖維礦(WURTZITE) 結構極性分析 - 57 -

3.4.2 極性與半極性氮化鎵/氮化銦鎵能帶圖分析 - 57 -

3.5結構與優缺點分析 - 59 -

第四章、結論與未來發展 - 65 -

4.1 結論 - 65 -

4.2 未來發展 - 65 -

參考文獻 - 67 -

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指導教授

賴昆佑(Kun-yu Lai)

審核日期

2014-7-16

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