IV族半導體基板鈍化層研究

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姓名

黃鼎育(Ding-yu Huang) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

IV族半導體基板鈍化層研究
(Research on the Passivation of IV Group Semiconductor Substrates)

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摘要(中)

本研究可以分為兩個部份來討論，其一是矽基板與鍺基板上鈍化層的分析，第二是比較分析兩種不同基板上鈍化效果。利用沉積四種不同鈍化層薄膜，分別是SiO2/SiNx、Ta2O5、TiO2、Al2O3，鍍製在IV族基板上，期望藉此改善太陽能電池基板的載子表面復合。鈍化層的分析主要分成電性分析以及薄膜成分的分析，觀察對不同鈍化薄膜於不同基板鈍化效果。在電性分析上量測少數過量載子生命週期值與電流電壓特性曲線，在成份分析上量測X-ray光電子能譜儀。
根據本實驗的分析結果，在矽基板上SiO2/SiNx堆疊結構有最好的鈍化效果，少數過量載子生命週期值為127.97 μs，樣品漏電流為5.8×10-8 A(0.5V)，是四種鈍化層中表現最佳。而在鍺基板上則是Ta2O5薄膜具有最好的鈍化效果，少數過量載子生命週期值為9.41μs，樣品漏電流值為9.77×10-5 A(0.5V)，亦是四種鈍化材料中表現最佳。

摘要(英)

There are two main parts in this research. One is the analysis of the passivation layers on the silicon substrates or germanium substrates. Another one is the compare of the passivation effect on the different substrates (crystalline silicon and germanium). Four different materials were used to be the passivation layers of the group IV semiconductor substrates to reduce the recombination of the substrate surface. They are SiO2/SiNx, Ta2O5, TiO2 and Al2O3, the electrical and stoichiometric properties of the passivation layers are including their leakage current, excess minority carrier lifetime and atomc content ratio on the group IV semiconductor substrates.
According to the experimental results, the SiO2/SiNx layers on the silicon substrate, achieved the best passivation effect. The minority lifetime is 127.97 μs, and the leakage current is 5.8×10-8 A (0.5 V). And the Ta2O5 layer on the germanium substrates also achieved the best passivation effect. The minority lifetime is 9.41μs and the leakage current is 9.77×10-5 A (0.5 V).

關鍵字(中)

★ 鈍化
★ 五氧化二鉭
★ 氮化矽
★ 三氧化二鋁
★ 二氧化鈦
★ 載子生命週期
★ 電性分析

關鍵字(英)

★ passivation
★ Ta2O5
★ SiNx
★ Al2O3
★ TiO2
★ carrier lifetime
★ electric properties analysis

論文目次

目錄
第一章緒論 1
1.1 太陽能電池簡介與分類 1
1.2 太陽能電池IV族基板及其鈍化介紹 4
1.3 研究動機 5
1.4 論文架構 6
第二章文獻回顧 7
第三章基本理論 10
3.1 IV族基板內傳輸載子的復合(Recombination)機制 10
3.1.1輻射復合(Radiative recombination) 11
3.1.2歐傑復合(Auger recombination) 13
3.1.3 缺陷所造成的缺陷(Trap –assisted recombination) 15
3.2 對基板鈍化的機制與原理 19
3.2.1化學鈍化(Chemical passivation) 19
3.2.2場效應鈍化(Field effect passivation) 20
3.3 少數載子生命週期量測準穩態光導(QSSPC)量測法 22
3.4 鍺基板載子遷移率模型基礎 24
第四章實驗儀器與製程設備 27
4.1 元件結構 27
4.2 製程步驟與流程 28
4.2.1基板清洗 28
4.2.2薄膜沉積 31
4.2.3通氣退火 32
4.2.4正電極沉積 33
4.3 實驗儀器介紹 34
4.3.1少數載子生命週期量測儀(WCT-120) 34
4.3.2電流-電壓(I-V)電性量測儀 36
4.3.3 X-ray光電子能譜儀(X-ray Photoelectron Spectroscopy) 36
4.4 製程設備 38
4.4.1雙電子槍蒸鍍機(E-gun evaporator) 38
4.4.2原子層沉積(Atomic layer deposition) 38
4.4.3電漿輔助化學氣相沉積(PECVD) 40
第五章 IV族基板鈍化研究分析 41
5.1 氧化物鈍化層過程與參數 41
5.1.1三氧化二鋁(Al2O3)製程 41
5.1.2二氧化矽(SiO2)、二氧化鈦(TiO2)與五氧化二鉭(Ta2O5)製程 41
5.1.3氮化矽(SiNx)製程 42
5.2 少數過量載子生命週期量測分析 43
5.2.1矽基板上鈍化層分析 43
5.2.2鍺基板上鈍化層分析 45
5.2.3少數過量載子生命週期分析結論 46
5.3 電流-電壓(I-V)特性曲線量測分析 48
5.3.1鈍化層於不同基板上I-V分析 48
5.4 光電子能譜儀(XPS)材料分析 52
5.4.1 Al2O3薄膜元素分析 52
5.4.2 TiO2薄膜元素分析 53
5.4.3 Ta2O5薄膜元素分析 54
5.4.4 SiO2/SiNx薄膜元素分析 56
5.4.5 本節結論 59
第六章結論與未來工作 60
參考文獻 62

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指導教授

陳昇暉(Sheng-hui Chen)

審核日期

2014-7-31

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