參考文獻 |
[1]International Institurte for Applied Systems Analysis, 2012.
[2]"Gloable warning science", Union of Concerned Scientists,2013
[3]Paul Maycock, Bloomberg New Energy Finance, 2013
[4] D. S. Kim, "Development of a Phosphorus Spray Diffusion System for Low-Cost Silicon Solar Cells", Journal of The Electrochemical Society, 153(7), A1391-A1396, 2006,
[5] S. Pizzini, "Towards solar grade silicon: Challenges and benefits for low cost photovoltaics", Solar Energy Materials & Solar Cells, Vol. 94, pp. 1528-1533, 2010
[6]Daniel Macdonald, "PHOSPHORUS GETTERING IN MULTICRYSTALLINE SILICON STUDIED BY NEUTRON ACTIVATION ANALYSIS", IEEE, vol.2, 0-7803-7471-1, 2002
[7] V. D. Mihailetchi, “Screen printed n-type silicon solar cells for industrial application,” in Proc. 25th Eur. Photovoltaic Sci. Eng. Conf., pp. 1446–1448, 2010.
[8]Izete Zanesco," Development and Comparison of Small and Large Area Boron Doped
Solar Cells in n-type and p-type Cz-Si", IEEE, 2011, 6, 978-1-4673-0066, 2011.
[9] Gajendra Singh, Fabrication of c-Si solar cells using boric acid as a spin-on dopant for back surface field" , The Royal Society of Chemistry, 4, 4225–4229, 2014.
[10] LIBAL, J., et al., “Record efficiencies of solar cells based on n-type multi crystalline silicon”, In:Proceedings of the 22th European Photovoltaic Solar Energy Conference, pp. 1382-1386, Milão,Sep. 2007.
[11] J. Y. Lee and S. W. Glunz, “Boron-back surface field with spin-on dopants by rapid thermal processing,” in Proc. 19 th EU-PVSEC, pp. 998-1001, 2004.
[12] G. Bueno, “Simultaneous Diffusion of Screen Printed Boron and Phosphorous Paste for Bifacial Silicon Solar Cells,” in Proc. 20 th EU-PVSEC, pp. 1458-1461, 2005.
[13] PV News, Paul Maycock, 1997.
[14] European Photovoltaic Industry Association, 2010.
[15] European Photovoltaic Industry Association, 2014.
[16] A. Richter,“Improved parameterization of Auger recombination in silicon”, Energy Procedia, vol. 27, pp. 88-94, 2012
[17]Schimpe, R., Theory of reflection at the facet of a semiconductor-laser. Aeu-Archiv
Fur Elektronik Und Ubertragungstechnik-International Journal of Electronics and Communications. 46(2): p. 80-85, 1992.
[18]Sharma, S.K., et al., Determination of solar-cell parameters - an analytical approach.
Journal of Physics D-Applied Physics. 26(7): p. 1130-1133, 1993.
[19] A. Richter, F. Werner, A. Cuevas, J. Schmidt, and S. Glunz, et al., “Improved parameterization of auger recombination in silicon”, Energy
Procedia, vol. 27, pp. 88-94, 2012.
[20]Choi, S.J., et al., The electrical properties and hydrogen passivation effect in monocrystalline silicon solar cell with various pre-deposition times in doping process.Renewable Energy, 2013. 54: p. 96-100.
[21]M. Kerr and A. Cuevas, “General parameterization of Auger recombination in crystalline silicon”, Journal of Applied Physics,Vol. 91, pp. 2473-2481, 2002.
[22]W. Shockley and W. Read, “Statistics of the recombinations of holes and electrons”, Physical Review,Vol. 87, pp. 835–842, 1952.
[23] R. Hall, “Electron-hole recombination in germanium”, Physical Review, Vol. 87, pp. 387–387, 1952.
[24] I. Martín, a M. Vetter, M. Garín, A. Orpella, C. Voz, J. Puigdollers, and R.
Alcubilla et al., “Crystalline silicon surface passivation with amorphous SiCx:H
films deposited by plasma-enhanced chemical-vapor deposition”, Journal of
Applied Physics, Vol. 98, pp. 114912-114921, 2005.
[25]M. Kerr and A. Cuevas, “General parameterization of auger recombination in crystalline silicon”, Journal of Applied Physics,Vol. 91, pp. 2473-2481, 2002.
[26]S. Dauwe, Low-temperature surface passivation of crystalline Silicon and its application to the rear side of solar cells, harderberg, 2004.
[27]Hyomin Park et al, “Effect of the phosphorus gettering on si heterojunction solar cells“, International Journal of Photoenergy.Article ID 794876, 7 pages, 2012
[28]Gajendra Singh et al, “Fabrication of c-Si solar cells using boric acid as a spin-on dopant for back surface field“, The Royal Society of Chemistry, Vol.4 , pp. 4225–4229, 2014
[29] Arnab Das, "Development of high-efficiency boron diffused silicon solar cells", PhD dissertation, Atlanta, Georgia, Georgia: Institute of Technology, School of Electrical and Computer Engineering, 2012
[30]Peter J, "The influence of diffusion-Induced dislocations on high efficiency silicon solar cells", IEEE Transactions on electron devices, VOL. 53, NO. 3 , 2006.
[31]F.Gaisean, "Analysis of the generation of the misfit dislocations during the boron prediffusion in silicon", Proc. SPIE Conf. Process, Equipment, Mater. Control Integr. Circuit Manufact. IV, pp. 281-285, 1998.
[32]M.Oriowski, "Unified model for impurity diffusion in silicon", Appl.Phys.Lett, 53(14), 1988.
[33]R.W. Gregor,"Studies of effective gettering techniques using segregation annealing for complementary metal-oxide-semiconductor technologies", J.Appl.Phys, 64(4),1988.
[34]S. Bowden," Implied-Voc and suns-Voc measurements in multicrystalline solar cella", IEEE , 371 - 374, 2002 |