以RF濺鍍法沉積鈮酸鋰薄膜之研究

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姓名

黃富財(Fu-Tsai Hwang) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

以RF濺鍍法沉積鈮酸鋰薄膜之研究
(The Study of Lithium Niobate Thin Films by RF Sputtering Method)

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摘要(中)

摘要
很高品質的鈮酸鋰薄膜以高頻磁控濺鍍法被沉積在矽及石英基板上可作為聲表面波及光波導的應用。我們探討過表面形態、紋理、結晶性、膜厚、折射率、消光係數等特性和濺鍍參數及退火過程之依存關係。我們由熱差分析儀測量最佳的濺鍍溫度。利用x光及低撂角x光繞射儀測試薄膜的結晶性。利用原子力顯微鏡測試薄膜表面的粗糙度。借助於原子力顯微鏡和x光繞射量測，以探討鈮酸鋰表面形態和結晶特性變化之機制。透過本研究發現最佳的濺鍍溫度約為575℃，最佳的氣體流量比Ar/O2 為1：1。同時發現較合適的RF濺鍍功率為100W。由橢圓儀量測鈮酸鋰薄膜之膜厚、折射率、消光係數，發現薄膜之折射率為2.2(波長為632.8奈米)它與發表的折射率值符合。同時我們量測到薄膜之消光係數約為零，這代表本研究沉積的薄膜適合作為光波導。

摘要(英)

Abstract
Very high quality LiNbO3 films were deposited on both silicon and quartz substrates for the applications of surface acoustic wave and optical waveguide by RF magnetron sputtering. We have investigated the dependence of the surface morphology, texture, crystallinity, thickness, refractive index, extinction coefficient properties with the sputtering parameters and annealing process. The optimum deposition temperature was measured by differential thermal analysis. The crystallinity was examined by x-ray and low angle x-ray diffractometer (XRD). The roughness of LiNbO3 thin films was examined by atomic force microscopy (AFM). AFM and XRD measurements were used to investigate the mechanisms of the variation in the surface morphology and crystallinity of LiNbO3 thin films.The optimum deposition temperature was found to be about 575℃. In this investigation the optimum ratio of the mass flow Ar/O2 was found to be about 1:1. Simultaneously, the RF power necessary for texture was found to be about 100W. The thickness, refractive index and extinction coefficient of LiNbO3 thin films were examined by ellipsometer. We have found the refractive index (n) is 2.2 (at 632.8nm), which is identical with the parameter of LiNbO3 ever reported. At the same time, the extinction coefficient of LiNbO3 thin films approachs to zero , represents that these thin films are suitable for optical waveguides.

關鍵字(中)

★ 鈮酸鋰薄膜

關鍵字(英)

★ Lithium Niobate Thin Films

論文目次

目錄
摘要
第一章前言……………………………………………………………..1
1-1 RF電漿濺鍍法…………………………………………………..8
(Radio-Frequency Plasma Sputtering method)
1-2 脈衝雷射沉積法………………………………………………..23
(Pulsed Laser Deposition method)
1-3 液相磊晶法……………………………………………………..28
(Liquid Phase Epitaxy method)
1-4 溶膠-凝法…………………………………………...……….32
(Sol-Gel method)
1-5 有機金屬化學氣相沉積法……………………………………..37
(MOCVD method)
第二章 RF電漿濺鍍沉積法之工作原理…………………………......44
2-1 電漿理…………………………………………………………....44
2-1-1電漿的定義…...……………………………………………..44
2-1-2電漿的成份…...…………………………………………..…45
2-1-3電漿的參數………...……………………………………..…46
2-1-3-1平均自由路……..……………………………………...46
2-1-3-2 磁場…………………………………………………....47
2-1-3-3 加速度及熱速度……………………………………....50
2-1-4射頻電漿 (Radio Frequency Plasma, RF Plasma) ………52
2-1-5離子轟擊………………………………...………………..…53
2-1-6直流偏壓……………………………………...…………..…55
2-1-7電漿的輝光………………………………….…..………..…58
2-2濺鍍原理………………………………………….…………......62
2-2-1 RF-射頻磁控式濺鍍法………………………………….....65
2-3 RF濺鍍機之基本結構…………………………………..……....68
2-3-1 RF濺鍍機結構說明………………………………………....68
2-3-2 濺鍍機操作步驟…………………………………..……....69
第三章 Si(100)基板上沉積鈮鋰薄膜之研究………………………….71
3-1預備工作…………………………………………………....…….71
3-1-1 樣品之準備…………………………………..…………....71
3-1-2 鉬舟之準備…………………………………..…………....71
3-1-3 蒸鍍源(LiNbO3)粉末之準備…………………………......72
3-1-4 熱蒸鍍機之準備……………………………..…………....72
3-2 蒸鍍製程(Evaporation process) ………………………………74
3-2-1 抽真空……………………………..………………........74
3-2-2 基板加熱………………………………..……………......74
3-2-3 蒸鍍………………………………..……………..........75
3-3 關機與繕後處理……………………………………............76
3-3-1關機(shut down) ………………………………….........76
3-3-2 繕後……………………………………..................76
3-4 特殊處理(晶化處理) ……………………….................78
3-4-1 醋酸鎳處理………………………......................78
3-4-2 高溫爐熱退火處理(Annealing process) ..............78
3-5 薄膜特性之量測...........................................................80
3-5-1 膜厚之量測...........................................................80
3-5-2 粗糙度之量測...........................................................80
3-5-3 結晶特性之量測...........................................................80
3-5-4 薄膜折射率(n)及消光係數(k)之量測..................80
3-6 以蒸鍍法在Si(100)基板上沉積鈮酸鋰薄膜之實驗...........81
3-7 以RF濺鍍法在Si(100)基板上沉積鈮酸鋰薄膜之實驗.........85
第四章以RF濺鍍法在Si(111)基板上沉積鈮酸鋰薄膜之研究.......89
4-1 LiNbO3 粉末晶化溫度之探討.............................90
4-2基板溫度與薄膜晶化特性之探討...........................92
4-3氣體流量Ar/O2之比例與薄膜結晶特性之影響................93
4-4 RF濺鍍功率與沈積薄膜粗糙度相關性之探討........…......94
4-5基板溫度與薄膜表面粗糙度相關性之探討...................95
4-6以低撂角XRD探討薄膜之結晶特性..........................96
4-7以低撂角XRD探討RF濺鍍功率與薄膜結晶性之相關性…........97
4-8薄膜折射率(n)、消光係數(k)及薄膜厚度之量測.............98
第五章以RF濺鍍法在石英基板上沉積鈮酸鋰薄膜之研究………....101
第六章結論及未來展望......................................107
第七章參考文獻............................................110

參考文獻

1.G. Griffel, S. Ruschin, and N. croitoru, “Linear electro-optic effect in
sputtered polycrystalline LiNbO3 films, “Appl. Phys., Lett. 54（15）, 1989.
2.K.-S Ho, J. Lin, J. Chen, T. A. Rabson and R. Higgins, “Thin film lithium
niobate on sapphire for SAW applications, “ Integrated Ferroelectrics,.
vol.11,pp-201-211,1995.
3.R. S. Weis and T. K. Gaylord, “Lithium niobate:summary ofphysical properties
and crystal structure,” Appl. Phys A, vol. 37,pp.191-203,1995.
4.T. A. Rost, T. A. Rabson, B. A. Stone, D. L. Callhan and R. C. Baumann,
“Physical structure of lithium niobate thin films,” IEEE Trans. Ultrason.,
Ferroeled., Freq. Contr., vol. 38 pp.640-843,1991.
5.B. C. Grabmaier, W. Wersing, W.Kowstler, J. Crystal Growth vol.110, p339,
1991.
6.B. E. A. Saleh, M. C. Teich, Fundamentals of photonis, wiley. Interscience, P
736 1991.
7.F. J. Leonberger, C. E. Wood ward, R. A. Becker Digest of Topical Meeting on
Integrated and guided wave optics,WA3 , 1982.
8.M. Izutsu, A. Enokihara, N. Mekada, etal. Proc. Of Scond Eruopean Conference
on Integrated optics,.p144-147, 1983.
9.何世賢 , 超薄異質複合晶圓製程技術 , 機械工業雜誌 251期 , 121-125.2004.
10.Timothy A. Rost, HeLin, and Thomas A. Rabson, Deposition and analysis of
Lithium niobate and other Lithium niobium oxides by RF magnetron sputtering,
J. Appl. Phys. Vol. 72, No. 9, 1992.
11.Charles Hung-Jia Huang, Herman Chung-Kang Chui, Barbara A. Stone, Timothy A.
Rost and Thomas A. Rabson, Optical Characterization of Lithium Niobate Thin
Films, IEEE ,P726-720,1991.
12.Jiun-Ting Lee, Neil Little, Thomas Rabson and Marc Robert. Thin-Film Lithium
niobate on Diamond-Coateel Silicon Substrates for Surface Acoustic Wave
Applications, IEEE Ultrasonics symposium, P269-272,1999.
13.M. Ishihara, T. Nakamura, F. Kokai, Y. Koga, preparation of AIN and LiNbO3
thin films on diamond substrates by sputtering Method, Diamond and Related
Materials, p408-412, 2002.
14.M. Ishihara, T. Nakamura, F. Kokai, Y. Koga, preparation of Lithium Niobate
thin films on Diamond-Coated Silicon substrate for surface acoustic devices
Diamond and Related Materials, vol.12, 1809-1813,2003.
15.V. Bornand, B. Gautier, Ph. Papet, Growth and nanoscale ferroelectric
investigation of radiofrequency-sputtered LiNbO3 thin films, Materials
chemistry and Physics vol.86, p340-346, 2004.
16.R.I. Tomov, T.K. Kabadjova, P.A. Atanasov, S. Tonchev, M. Kaneva, A.
Zherikhin,R. W. Eason, “LiNbO3 optical waveguides deposited on sapphire by
electric-field-assisted pulsed laser deposition ”, Vacuum vol.58, p396-403,
2000.
17.D. Ghica, C. Ghica, M. Gartner, V. Nelea, C. Martin, A. Cavaleru, I. N.
Mihailesc“Pulsed laser deposition of lithium niobate: a parametric
study.”, Applied Surface Science vol.138-139, p617-621, 1999.
18.D.B. Chrisey, G.K. Hubler （Eds.）, Pulsed Laser Deposition of Thin Films,
Wiley, New York, 1994.
19.H. Tamada, A. Yamada, M. Sayito, J. Appl. Phys. 70 （1991） 2536.
20.D. Callejo, S. Manotas, M. D. Serrano, V. Bermudez, F. Agullo-Rueda, E.
Dieguez, “Compositional study of LiNbO3 Thin films grown by liquid phase
epitaxy” Journal of Crystal Growth vol.226, p488~492, 209.
21.T.Kawaguchi, K.Mizuuchi, T.Fuknda, J.crystal Growth vol.203, p173, 1999.
22.T. Kawaguchi, D.Yoon, M. Minakata, Y. Okada, M. Imaeda, T. Fukuda, J.
Crystal Growth , vol.152, p87, 1995.
23.A.Yamada, H.Tamada, Appl.phys.Lett.61, 24, 2848, 1992.
24.Y. Knodo, T. Fukuda, Y. Yamashita, K. Yokyama, K. Arita, M. Watanabe, Y.
Knodo, T. Fukuda, Y. Yamashita, K. Yokyama, K. Arita, M. Watanabe, Y.
Furukawa, K. Kitamura, H. Nakajima, Jpn. J. Appl. phy. 39, 1477, 2000.
25.S.Hirano, K.Kato, J.Non-Cryst. Solids 100, 538, 1988.
26.S.Ono, O.Bose, W.Unger, Y.Takeichi, S.Hirano, J.Am. Ceram. Soc.81 , 1749,
1998.
27.H.Kozuka, M.Kajimura, Chem, Lett. 1029, 1996.
28.S.Takenaka, H.Kozuka, Appl. Phys. Lett. 79, 3485, 2001.
29.M.Yuki, T.Oka, H.Yamauchi, H.Nakajima, S.Kurimura and K.Kitamura, IEICE
Technical Report, OPE 2001-111, 200143（In Japanese） .
30.J.L.Jackel, C.E.Rice, J.J.Veselka, Appl. phys. Lett, 41, 607, 1982.
31.M.Takahashi, K.Yamauchi, T.Yagi, A.Nishiwaki, K.Wakita, N.Ohnishi, K.Hotta,
I.Sahashi, Thin Solid Films 458, p108~114, 2004.
32.H. M. Manasevit and W. I. Simpson. J. Electrochem. Soc. 12, 156, 1968.
33.R. Hiskes, S. A. Dicarolis, J. L. Young, S. S. Laderman, R. D. Jacowitz and
R. C. Taber, Appl, Phys. Lett. 59, 869, 1991.
34.R. S. Feigelson, Epitaxial growth of lithium niobate thin films by the Solid
Source MOCVD method, Jounal of crystal Growth 166, p1~16, 1996.
35.Strem chemicals Inc., Dexter Industrial Park, 7 Mulliken way, Newburry port,
Massachusetts, USA.
36.S. Y. Lee, R. K. Route an R. S. Feigelson, MRS Proc, Spring Meeting in pres.
37.Z. Lu, R. Hiskes, S. A. Dicarolis, R.K. Route, R. S. Feigelson, F.
Leplingard and J. E. Fouguet, J. Mater, Res. 9, 2258,1994.
38.Z. Lu, R. S. Feigelson, R. K. Route, S. A. Di Carolis, R. Hiskes and R. D.
Jacowitz, J. Crystal Growth 128, 788, 1993.
39.J. J. Kingston, Fo Leplingard and D. K. Fork, MRS proc. Fall meeting,
Boston, USA, 1993.
40.J. J. Kingston, D. K. Fork, F. Leplingard and F. A. Pance, MRS proc,
springmeeting ,San Francisco USA, 1994.
41.Zh. Lu. PhD Thesis, Stanford university , 1995.
42.G. Griffel, S. Ruschin, and N. Croitiru, Appl. phys. Lett. 54, 1385, 1989.
43.Hong Xiao, 羅正忠譯著, 張鼎張譯著, 半導體製程技術導論, 台灣培生教育出版股份有
限公司, Chapter 7, 2001.
44.施敏原著, 黃調元譯,半導體元件物理與製作技術(第二版),國立交通大學出版社, P97,
2002.
45.Michael Quirk, Julian Serda, Semiconductor Mannfacturing Technology,
prenticer (a), chapter 12 2001.
46.Critical Reviews of Optical Science and Technology, Overview of Variable
Angle Spectroscopic Ellipsometry (VASE), the Society of Photo-Optical
Instrumentation Engineers, 18-19 July 1999.
47.H. Akazawa, M. Shimada, correlation between interfacicl structure
and c-axis-orientation of LiNbO3 films grown on Si and SiO2 by electron
cyclotron resonance plasma sputtering, Jurnal of crystal Growth 270, p560-
567, 2004.
48.Makoto Takahashi, Keiko Yamauchi, Toura Yagi, Akira Nishiwaki, Koichi
Wakita, Naoxuki Ohnishi, Kzautoshi Hotta, Ietaka Sahashi, preparation and
characterization of high-guality stoichiometric LiNbO3 tick films prepared
by the sol-gel method, Thin solid Films 458, 108-113, 2004.

指導教授

李清庭、張正陽
(Ching-Ting Lee、Jenq-Yang Chang)

審核日期

2006-7-24

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