在SOI基板上以快速熱熔法製造高品質鍺及近紅外線光偵測元件之研製

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姓名

王上明(Shang-ming Wang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

在SOI基板上以快速熱熔法製造高品質鍺及近紅外線光偵測元件之研製
(High-Quality Ge on SOI for Near Infrared Photodetector by Rapid-Melting-Growth Technique)

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摘要(中)

隨著高速通訊快速的發展，光傳輸是許多團隊研究的重點，本論文所呈獻之成果為高品質鍺製作成的光偵測器和特性量測，及其在光通訊上的應用潛力。我們利用SOI wafer蝕刻出許多矽長條型結構後，由國家奈米元件中心(NDL)進行離子佈值分別以BF2、As摻雜成為P型以及N型相間的陣列，在P型和N型矽上方鍍上一層鍺膜，再將試片在爐管中進行超過鍺熔點溫度的快速熱退火後，利用拉曼光譜儀以及穿透式電子顯微鏡等分析鍺膜，發現鍺的品質提升。藉由鍺材料在可見光及近紅外光波長下具有較矽為佳的光吸收特性，並搭配P型和N型矽形成P-I-N結構的光偵測器，將可得到和現今矽製程相容的光電元件，並具有良好的光電轉換效率與光響應。

摘要(英)

With the rapid development of high-speed communication, light transmission has been the mainstream in academic researches due to its better light absorption characteristics at near-infrared wavelength and potential applications in optical communications. This thesis presents the high-quality germanium on SOI for photodetectors as well as its characteristics and measurement. The Ge was made by rapid-melting-growth technique and investigated by Raman spectroscopy and standard electron microscopy analysis. The high-quality Ge was integrated with P-type and N-type silicon pillars for the PIN photodetector. This work demonstrated that high-quality Ge can be obtained by COMS-compatible process with good photoelectric conversion efficiency and photoresponsity.

關鍵字(中)

★ 矽鍺
★ 快速熱熔法
★ 近紅外光

關鍵字(英)

論文目次

摘要…………………………………………………………………………………………………I
Abstrate……………………………………………………………………………………II
致謝………………………………………………………………………………………………III
目錄………………………………………………………………………………………………IV
圖表目錄………………………………………………………………………………………V
第一章研究動機………………………………………………………………1
1-1 簡介………………………………………………………………………………1
1-2 鍺/矽異質結構簡介………………………………………………1
1-3 鍺光偵測器研究動機………………………………………………3
第二章鍺光偵測器製作現況與實驗動機…………………7
2-1 前言……………………………………………………………………………7
2-2 光二極體及PIN光偵測器種類和操作原理…7
2-2-1 P-I-N光偵測器操作原理……………………8
2-3 光偵測器之光響應度與截止波長……………………8
2-3-1 光的種類..………………………………………………8
2-3-2 光響應度 (Photoresponsivity)……………………9
2-3-3 截止波長 (Cut-off Wavelength)…………………9
2-4 製作出良好的單晶鍺材料………………………………………………9
第三章 P-I-N光偵測器設計與關鍵製程……………11
3-1 前言……………………………………………………………………11
3-2 鍺光偵測設計構想…………………………………………11
3-3 光偵測器的關鍵製程……………………………………11
3-3-1 關鍵製程-形成良好的單晶鍺材料………12
3-4 單晶鍺光偵測器製作完整流程…………………………………………12
第四章 P-I-N光偵測量測分析與探討………………………22
4-1 前言…………………………………………………………………………………………22
4-2 鍺膜在高溫退火後的拉曼光譜量測分析……………………22
4-3 HRTEM鍺膜退火後影像分析……………………………………………23
4-4 光偵測器光電特性量測分析……………………………………………24
4-4-1 光偵測之波長相依特性…………………………………………24
4-4-2 光偵測之功率相依特性…………………………………………26
第五章結論與未來展望…………………………………………………………33

參考文獻……………………………………………………………………………34

參考文獻

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指導教授

辛正倫(Cheng-lun Hsin)

審核日期

2015-1-20

推文