磷化銦鎵/砷化鎵平面摻雜異質接面雙極性電晶體之研製

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曾勝揚(Sheng-Yang Zeng) 查詢紙本館藏

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光電科學與工程學系

論文名稱

磷化銦鎵/砷化鎵平面摻雜異質接面雙極性電晶體之研製
(磷化銦鎵/砷化鎵平面摻雜異質接面雙極性電晶體之研製)

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摘要(中)

摘要
本論文利用分子束磊晶(Molecular Beam Epitaxy, MBE)成長磷化銦鎵/砷化鎵平面摻雜異質接面雙極性電晶體(InGaP/GaAs δ doped HBT)，利用平面摻雜(δ doped)技術提昇基極的金屬-半導體之歐姆接觸特性，降低基極之串聯阻抗，進而提高功率增益截止頻率或最大振盪頻率(fmax)，並利用平面摻雜技術對基極區域電位的調變(potential modulation)，內建基極區域之加速電場，降低載子穿越基極之傳輸時間，進而提高截止頻率(cut-off frequency, ft)。
首先比較具有空間層(spacer)及平面摻雜的磷化銦鎵/砷化鎵異質接面雙極性電晶體(InGaP/GaAs HBT)與一般磷化銦鎵/砷化鎵異質接面雙極性電晶體之直流特性差異，並針對基極之歐姆接觸做進一步的探討。
在基極與未摻雜(undoped)之空間層間加入平面摻雜，調變基極金屬電極與基極半導體間之電位與雜質濃度，可以有效改善基極金屬電極的特徵電阻值(ρC)，其值約在10-4 ~ 10-5 (Ω-cm2)，證明平面摻雜對金屬與半導體接面歐姆接觸特性有顯著的提昇。
由射極-基極接面的電特性量測，具有空間層及平面摻雜之磷化銦鎵/砷化鎵異質接面雙極性電晶體(A結構)之起始電壓(Vturn-on)約1.45V，而一般不具空間層及平面摻雜的磷化銦鎵/砷化鎵異質接面雙極性電晶體(B結構)只有1.1V，可了解平面摻雜對此異質接面具有顯著的電位調變作用；此外，A結構明顯有較高的漏電流，在-2V時約數十個nA，而B結構只有數個nA。
於梗美樂-普恩繪圖(Gummel-Poon Plot)量測中，由於A結構之射極-基極有較大的漏電流，所以其電流增益約只有4，而B結構之電流增益約40；A結構主要是靠載子穿隧(tunneling)效應為電流成分，故理想因子η > 2，而B結構η接近於1，是以晶體復合電流(IB,bulk)為主要成分。
而在共射極電流增益(IC-VCE)量測中，兩個結構都不受歐利效應(Early effect)之影響，表示基極-集極接面濃度分佈相當陡峭(abrupt)。萃取補償電壓(VCE,offset)可以得到A結構約0.55V，B結構約0.15V，平面摻雜之電位調變在此得到應證。

關鍵字(中)

★ 磷化銦鎵
★ 砷化鎵
★ 平面摻雜
★ 脈衝摻雜
★ 脈波摻雜
★ 原子層摻雜
★ 突尖型摻雜
★ 歐姆接觸
★ 異質接面
★ 異質接面雙極性電晶體

關鍵字(英)

★ atomic layer doping
★ pulse doping
★ delta doping
★ planar doping
★ GaAs
★ InGaP
★ heterojunction
★ HBT
★ spike doping
★ Ohmic contact

論文目次

目錄
圖目錄 III
表目錄 VI
第一章導論 01
1.1 研究動機 01
1.2 異質接面雙極性電晶體簡介 03
第二章異質接面雙極性電晶體的基本原理及平面摻雜技術與應用 05
2.1 異質接面雙極性電晶體的基本原理 05
2.2 平面摻雜技術的基本原理 10
2.2-1 平面摻雜基本觀念 10
2.2-2 平面摻雜之成長技術 11
2.3 平面摻雜技術的應用 14
2.3-1 電位和電場的分析 15
2.3-2 平面摻雜於異質接面雙極性電晶體之應用 17
第三章異質接面雙極性電晶體結構與製作流程 19
3.1 異質接面雙極性電晶體的磊晶結構 19
3.2 異質接面雙極性電晶體的製程步驟 23
第四章異質接面雙極性電晶體元件特性的量測與分析 30
4.1 異質接面雙極性電晶體的直流特性量測 30
4.2-1 特徵接觸電阻的量測與分析 31
4.2-2 射極與基極異質接面的量測與分析 32
4.2-3 基極與集極接面的量測與分析 33
4.2-4 梗美樂-普恩繪圖量測與分析 34
4.2-5 共射極輸出特性及補償電壓之量測與分析 35
第五章結論與未來展望 38
參考資料 41

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指導教授

李清庭(Ching-Ting Lee)

審核日期

2002-7-12

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