氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光偵測器之製作與特性分析

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黃冠凱(Kuan-Kai Huang) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光偵測器之製作與特性分析
(The study of AlGaN/GaN heterojunction metal-semiconductor-metal photodetector)

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摘要(中)

摘要
本論文係利用有機金屬氣相沉積技術分別成長氮化鋁鎵/氮化鎵
異質接面蕭特基二極體結構試片和金屬－半導體－金屬光偵測器結
構試片，對試片製作蕭特基二極體，量測金屬與試片接觸的蕭特基位
障及理想因子，最後將蕭特基二極體的研究結果應用於金屬-半導體-
金屬光偵測器之製作，並量測元件暗電流及光頻譜響應度等特性。
論文中，在氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光偵測
器的光頻譜響應度中看出異質接面有抑制光電子－電洞被電極吸收
的情形，為確定原因，試著將試片中的氮化鋁鎵披覆層利用光電化學
氧化方法去除，再製作成金屬-半導體-金屬光偵測器，分析具有披覆
層及無披覆層光偵測器特性之差異。
最後藉由量測於不同偏壓下之光頻譜響應度與霍爾量測結果，確
定在光響應度抑制及連續暗電流中的峰值為氮化鋁鎵/氮化鎵異質接
面能帶不連續，在氮化鎵側產生一位阱，並有一很高濃度的電子侷限
在小範圍的位阱內，稱為二維電子氣，所造成的結果。

關鍵字(中)

★ 光偵測器
★ 金屬-半導體-金屬
★ 異質接面
★ 氮化鋁鎵/氮化鎵

關鍵字(英)

★ heterojunction
★ AlGaN/GaN
★ photodetector
★ MSM

論文目次

II
目錄
第一章緒論………………………………………………………1
第二章原理………………………………………………………5
2.1 金屬－半導體接面理論…………………….….…………5
2.1.1 蕭特基接面理論…………………….……………………5
2.2 金屬－半導體－金屬光偵測器工作原理………......……...8
2.3 量測技術原理………………………….……………………9
2.3.1 暗電流與光電流之特性量測…………………………….9
第三章元件設計製作與量測結果……………………...……12
3.1 元件設計……………………………..…….………………12
3.1.1 磊晶結構………………………...…………………..13
3.2 元件製作……………………………..….…...……….….14
3.2.1 元件結構………………………………………….….14
3.2.2 蕭特基二極體元件製程………………….……….…….14
3.2.3 金屬－半導體－金屬光偵測器製程…………...…..16
3.3 量測與實驗結果……………………....…………………17
3.3.1 蕭特基二極體電流－電壓特性量測………….……18
3.3.2 金屬－半導體－金屬光偵測器電流－電壓特性量測.19
III
3.3.3 金屬－半導體－金屬元件暗電流衰減量測…….…21
3.4 利用光電化學氧化方法成長氧化層於光偵測器………24
第四章結論…………………………………………………26
參考文獻…………………..……………………………………28
圖………………………………………..………………………36

參考文獻

28
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指導教授

李清庭(Ching-Ting Lee)

審核日期

2003-7-9

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