近紅外光單晶鍺薄膜光偵測器

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姓名

林宗孝(Tsung-Hsiao Lin) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

近紅外光單晶鍺薄膜光偵測器
(Near Infrared Crystal Germanium film Photodetector)

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摘要(中)

本論文主旨為製作近紅外光之金屬-鍺-金屬光偵測器(metal-germanium-metal photodetector)並加以量測及分析。鍺的吸收波段恰可應用於光通訊常用之近紅外光波長850nm、1310nm與1550nm，但因為鍺本身價格昂貴，故本實驗先利用濺渡方式在矽基板上長出單晶鍺薄膜後再製作光偵測器，藉由此方式不僅可以保留鍺在近紅外光出色的表現也可以大大降低生產成本。
　　本研究使用指叉狀電極(Interdigitated electrode)做為光偵測器之電極，其目的是利用簡單的製程做出高頻的元件並希望可將其應用於IC設計當中。本實驗主要使用三種不同基板製作光偵測器，分別是矽基板、鍺基板與鍍在矽基板上的鍺薄膜，除了響應度(responsivity)及頻率響應(frequency response)的量測與分析外，還會分析膜品質對於元件的影響。本實驗矽基板之光偵測器響應度最高可達0.46A/W，頻率響應可達43.35MHz，而鍺基板跟鍺薄膜的響應度則分別為0.257A/W及2.71mA/W。

摘要(英)

The particular metal-germanium-metal photodetector (PD) is investigated in this research. Germanium has good absorption coefficient in near infrared such as 850nm, 1310nm and 1550nm which are commonly used in optics communication. Unfortunately, the prohibitive cost of germanium wafer makes it difficult to popularize. Radio frequency (RF) sputtering system is used to deposit single crystal intrinsic germanium film to fabricate the photodetector. It not only keeps performance of Ge but also reduces the cost more than a factor of five.
In this investigation, interdigitated electrodes are used on the devices with the purposes of a relative easy process for high-speed devices and a comparable process for the integrated circuit. Three different substrates are used to fabricate photodetectors including n-Si, p-Ge and i-Ge/n-Si. Responsivities and frequency responses are measured and analyzed. Besides, the effect of the Ge thin film on the device was also discussed. The responsivity of PDs are 0.46A/W, 0.257A/W and 2.71mA/W for n-Si, p-Ge and i-Ge/n-Si respectively. The frequency response can be achieved 43.35MHz for Si-based MSM PD.

關鍵字(中)

★ 光偵測器
★ 鍺薄膜
★ 濺鍍
★ 鈍化
★ 金屬-半導體-金屬
★ 蕭特基接觸

關鍵字(英)

★ photodetector
★ germanium thin film
★ suputtering
★ passivation
★ metal-semiconductor-metal
★ schottky

論文目次

摘要 I
Abstract II
致謝 III
Table of Contents IV
List of Figures VI
List of Tables IX
Chapter 1 Introduction 1
1.1 Introduction 1
1.2 Literatures Review 2
1.3 Motivations 5
Chapter 2 Device Operation Principles 6
2.1 Schottky Contact and Ohmic Contact 6
2.2 Current Transport Processes 10
2.3 Operation Principles 12
2.3.1 Principles 12
2.3.2 Responsivity 15
2.3.3 Response Time 15
2.4 Surface Passivation 16
2.4.1 Chemical Passivation 16
2.4.2 Field Effect Passivation 17
2.4.3 Passivation of Germanium 18
Chapter 3 Experiments 21
3.1 Design of Interdigitated electrode 21
3.2 Simulation of Responsivity 23
3.3 Simulation of Response time 24
3.4 Device Fabrication processes 32
Chapter 4 Equipment 35
4.1 Cluster Sputter system 35
4.2 Dual E-gun evaporation System 37
4.3 Equipment of measuring Responsivity 38
4.4 Measurement system of frequency response 39
Chapter 5 Results and Discussions 40
5.1 SiO2:50nm/ Au:80nm/ Cr:20nm/ n-Si:325um 40
5.1.1 Responsivity 41
5.1.2 Response time (Frequency Response) 45
5.1.3 Passivation 48
5.2 Ta2O5:50nm/ Al:100nm /p-Ge 50
5.2.1 Responsivity 50
5.2.2 Response time (simulation) 54
5.2.3 Passivation 55
5.3 Al:100nm/Ta2O5:50nm/i-Ge film:550nm/n-Si and Al:100nm/SiO2:50nm /i-Ge film:550nm /n-Si 57
5.3.1 Responsivity 58
5.3.2 Response time (simulation) 65
5.3.3 Passivation 67
Chapter 6 Conclusions 69
References 71

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指導教授

陳昇暉(Sheng-Hui Chen)

審核日期

2015-8-21

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