利用濕式蝕刻製作圖樣化藍寶石基板於發光二極體之研究

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：39

、訪客IP：3.12.152.102

姓名

李克濤(Ko-Tao Lee) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

利用濕式蝕刻製作圖樣化藍寶石基板於發光二極體之研究
(A study on patterned sapphire substrates light-emitting diodes by using wet etching)

相關論文

★ 富含矽奈米結構之氧化矽薄膜之成長與其特性研究	★ 導波共振光學元件應用於生物感測器之研究
★ 具平坦化側帶之超窄帶波導模態共振濾波器研究	★ 低溫成長鍺薄膜於單晶矽基板上之研究
★ 矽鍺薄膜及其應用於光偵測器之研製	★ 低溫製備磊晶鍺薄膜及矽基鍺光偵測器
★ 整合慣性感測元件之導波矽基光學平台研究	★ 矽基光偵測器研製與整合於光學波導系統
★ 光學滑鼠用之光學元件設計	★ 高效率口袋型LED 投影機之研究
★ 在波長為532nm時摻雜鉬之鈦酸鋇單晶性質研究	★ 極化繞射光學元件在高密度光學讀取頭上之應用研究
★ 不同溫度及波長之摻銠鈦酸鋇單晶性質研究	★ 經氣氛處理之鈦酸鋇單晶其光折變性質及電荷移轉與波長的關係
★ 在不同溫度時氣氛處理鈦酸鋇單晶性質之比較	★ 摻銠鈦酸鋇單晶的氧化還原與光折變性質

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

[檢視]

[下載]

本電子論文使用權限為同意立即開放。
已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。
請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。

摘要(中)

本論文主要探討使用化學濕式蝕刻法來蝕刻藍寶石基板及其在雷射剝落法製作垂直式藍色發光二極體上之應用。化學濕式蝕刻其優點在於製程快速、成本低廉、選擇性佳且蝕刻之晶面光滑。圖樣化藍寶石基板可以降低氮化鎵磊晶層之錯位密度，提升磊晶品質，不同線寬之光柵式圖形對發光效率有不同之影響。圓洞狀圖樣化藍寶石基板可將發光二極體之電激發光強度提升2倍強。另外，使用晶片鍵合技術及雷射剝落法將氮化鎵磊晶層由散熱差的藍寶石基板移轉至散熱好的矽基板上製作之垂直式藍色發光二極體，並藉由在單一雷射脈衝區域內不同位置之光激發光光譜品質改變，了解脈衝雷射轟擊對氮化鎵磊晶層之影響。最後我們結合濕式蝕刻、晶片鍵合及雷射剝落技術製作出高品質氮化鎵磊晶之垂直式發光二極體。此一製程可在雷射剝落製程後完成垂直式之出光側之光柵圖形轉印，直接製作出光表面處理，提升其光激發光強度達2.86倍。

摘要(英)

In this study, we prepared a patterned sapphire substrate by chemical wet etching for the fabrication of vertical type blue light-emitting diode by laser lift-off process. The advantages of chemical wet etching are fast process, low cost, good selectivity and smooth etching surface. The patterned sapphire substrate can decrease the dislocation density of GaN epilayer and improve the luminous efficacy, which is also a function of the line-width of stripe grating patterns. The intensity of electroluminescence of the circular patterned sapphire substrate light-emitting diode is 2 times large than the conventional LED. The wafer bonding and laser lift-off techniques were used to transfer GaN epilayer from sapphire substrate to silicon substrate to form the vertical type light-emitting diode. In addition, we investigated the impact of pulsed excimer laser epilayer by examining the photoluminescence spectra on different sites of GaN after the laser lift-off process. We will combine chemical wet etching, wafer bonding and laser lift-off techniques to fabricate the light-emitting diode with high quality GaN epilayers. Thd pattern can be transferred after laser lift-off process and increase the photoluminence intensity to 2.86 times large than conventional structures.

關鍵字(中)

★ 圖樣化藍寶石基板
★ 發光二極體
★ 垂直式發光二極體
★ 雷射剝落法
★ 濕蝕刻

關鍵字(英)

★ patterned sapphire substrate
★ light-emitting diode
★ vertical-type LED
★ chemical wet etching
★ laser lift-off

論文目次

第一章前言．．．．．．．．．．．．．．．．．．．．．．．1
1.1 發光二極體目前之發展．．．．．．．．．．．．．．1
1.2 研究動機．．．．．．．．．．．．．．．．．．．．3
1.3 論文簡介．．．．．．．．．．．．．．．．．．．．3
第二章實驗原理及文獻回顧．．．．．．．．．．．．．．．．5
2.1 藍寶石基板之材料特性．．．．．．．．．．．．．5
2.2 氮化鎵磊晶與錯位的產生．．．．．．．．．．．．6
2.3 圖樣化藍寶石基板對氮化鎵磊晶之影響．．．．．．．7
2.4 濕式蝕刻製作圖樣化藍寶石基板之優缺點．．．．．10
第三章製作流程及步驟．．．．．．．．．．．．．．．．．．11
3.1 濕式蝕刻製作藍寶石基板之實驗方法及步驟．．．．11
3.2 發光二極體製程．．．．．．．．．．．．．．．．13
3.3.1 蝕刻平台之製作．．．．．．．．．．．．．．13
3.3.2 P型透明電極導電層區域製作．．．．．．．．．13
3.3.3 N型電極導電層及P型銲墊區域製作．．．．．．14
3.3 製程儀器簡介．．．．．．．．．．．．．．．．．15
3.4 量測系統簡介．．．．．．．．．．．．．．．．．16
第四章圖樣化藍寶石基板發光二極體之結果與討論．．．．．．20
4.1 藍寶石基板之濕式蝕刻面及磊晶．．．．．．．．．20
4.2 直條狀圖樣化藍寶石基板．．．．．．．．．．．．22
4.2.1 寬度對發光效率之影響．．．．．．．．．．22
4.2.2 深度對發光效率之影響．．．．．．．．．．25
4.3 圓洞狀圖樣化藍寶石基板．．．．．．．．．．．．．27
第五章圖樣化藍寶石基板用於垂直式發光二極體．．．．．．．30
5.1 垂直式發光二極體之結構．．．．．．．．．．．．30
5.1.1 製程之優點．．．．．．．．．．．．．．．30
5.1.2 製作流程．．．．．．．．．．．．．．．．31
5.2 脈衝雷射對氮化鎵層之影響．．．．．．．．．．．33
5.2.1 脈衝雷射轟擊之破壞．．．．．．．．．．．33
5.2.2 光激發光之影響．．．．．．．．．．．．．36
5.3 圖樣化藍寶石基板用於垂直式發光二極體．．．．．39
5.3.1 圖樣化藍寶石基板與垂直式結合之優點．．．39
5.3.2 高品質氮化鎵磊晶之垂直式發光二極體製程．39
5.3.3 高品質氮化鎵磊晶垂直式發光二極體之量測．40
第六章結論與未來展望．．．．．．．．．．．．．．．．．．44
參考資料．．．．．．．．．．．．．．．．．．．．．．．．46

參考文獻

[1] S. Nakamura, T. Mukai and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes,” Appl. Phys. Lett., vol. 64, pp. 1687 (1994).
[2] Hung-Wen Huang, C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang and C. C. Yu, “Improvement of InGaN–GaN Light-Emitting Diode PerformanceWith a Nano-Roughened p-GaN Surface”, IEEE Phot. Tech. Lett., vol. 17, 983 (2005).
[3] Chao-Chih Yang, Ray-Hua Horng, Chia-En Lee, Wen-Yu Lin, Kuan-Fu Pan, Ying-Yong Su and Dong-Sing Wuu, “Improvement in Extraction Efficiency of GaN-Based Light-Emitting Diodes with Textured Surface Layer by Natural Lithography”, Jap. Soc. Appl. Phys., vol.44, 2525 (2005).
[4] J. Shakya, J. Y. Lin and H. X. Jiang, “Time-resolved electroluminescence studies of III-nitride ultraviolet photonic-crystal light-emitting diodes”, Appl. Phys. Lett., vol.85, 2104 (2004).
[5] Chih-Chiang Kao, Hao-Chung Kuo, Hung-Wen Huang, Jung-Tang Chu, Yu-Chun Peng, Y.-L. Hsieh, C.Y. Luo, Shing-Chung Wang, Chang-Chin Yu and Chia-Feng Lin, “Light-output enhancement in a nitride-based light-emitting diode with 22 degree undercut sidewalls”, IEEE Phot. Tech. Lett., vol.17, 19 (2005).
[6] 吳麗雲，國立中央大學機械工程研究所碩士論文 (2006)。
[7] S. K. Hong, B. J. Kim, H. S. Park, Y. Park, S. Y. Yoon and T. I. Kim, ‘‘Evaluation of nanopipes in MOCVD grown（0001）GaN/Al2O3 by wet chemical etching’’, J. Cryt. Grow., vol. 191, 275 (1998).
[8] S. Nakamura, T. Mukai and M. Senoh, “Candela-class high-brightness InGaN/AlGaN double-heterostructure blue light-emitting diodes” , Appl. Phys. Lett., vol. 64, 1687 (1994).
[9] B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. Denbaars and J. S. Speck, “Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films”, Appl. Phys. Lett., vol. 68, 643 (1996).
[10] Bhattacharya , “Semiconductor Optoelectric Devices”, Prentice Hall
[11] D.Hull , ‘‘Introduction to Dislocations’’, 2nd Edition.Pergamon Press, Oxford.
[12] X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck and S. J. Rosner, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells”, Appl. Phys. Lett., vol. 72, 692 (1998).
[13] S. Keller, G. Parish, J. S. Speck, S. P. DenBaars and U. K. Mishra, “Dislocation reduction in GaN films through selective island growth of InGaN“, Appl. Phys. Lett., vol. 77, 2665 (2000).
[14] J.W.Matthews,‘‘Epitaxial Growth’’,Academic, New York.
[15] Michael Kneissl, Thomas L. Paoli, Peter Kiesel, David W. Treat, Mark Teepe, Naoko Miyashita and Noble M.Johnson, “Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator”, Appl. Phys. Lett., vol. 80, 3283 (2002).
[16] S. M. Sze, “Physics of Semiconductor Devices,” 2nd ed., Ch. 2, Wiley, New York, (1981).
[17] Woei-Kai Wang, Dong-Sing Wuu, Shu-Hei Lin, Pin Han, Ray-Hua Horng, Ta-Cheng Hsu, Donald Tai-Chan Huo, Ming-Jiunn Jou, Yuan-Hsin Yu and Aikey Lin, “Efficiency Improvement of Near-ultraviolet InGaN LEDs Using Patterned Sapphire Substrates,” IEEE J. Ouan. Elec., vol. 41, 1403-1409 (2005).
[18] Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo and S. C. Wang, “Enhancing the Output Power of GaN-Based LEDs Grown on Wet-Etched Patterned Sapphire Substrates,” IEEE Phot. Tech. Lett., vol. 18, 1152 (2006).
[19] Ching-Cherng Sun,Chao-Ying Lin and Tsung-Xian Lee, “Enhancement of light extraction of GaN-based light-emitting diodes with a microstructure array”, Opt. Eng., vol. 43, pp. 1700 (2004).
[20] J. T. Chu, H. W. Huang, C. C. Kao, W. D. Liang, F.I Lai, C. F. Chu, H. C. Kuo and S. C. Wang, “Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate”, Jap. J. Appl. Phys., vol. 44, 2509 (2005).
[21] W. S. Wong and T. Sands, N. W. Cheung, M. Kneissi, D. P. Bour, P. Mei, L. T. Romano and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett., vol. 75, 1360 (1999).
[22] W. S. Wong and T. Sands, N. M. Cheung, M. Kneissi, D. P. Bour, P. Mei, L. T. Romano and N. M. Johnson, “InxGa1-xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off,” Appl. Phys. Lett., vol. 77, 2822-2824 (2000).
[23] X. A. Cao and S. D. Arthur, “High-power and reliable operation of vertical light-emitting diodes on bulk GaN,” Appl. Phys. Lett., vol. 85, 3971-3973 (2004).
[24] C. F. Chu, F. I Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys., vol. 95, 3916 (2004).
[25] V. T. Nikolai, R. Lasse, Y. T. Andrei, H. Juho, H. H. Passv, L. Helge, “Photoinduced electron transfer in phytochlorin-[60] fullerene dyads,” J. Am. Chem. Soc., vol. 121, 9378 (1999).
[26] Stjepan Lugomer, “Laser Technology: Laser Driven Processes,” Prentice Hall, NJ, p.74 (1990).

指導教授

張正陽(Jeng-Yang Chang)

審核日期

2007-7-6

推文