| 摘要(英) |
In mask manufacture,“Contact Hole Layer” is a hole layer which has square shape used for pattern design. Sometimes it is not well exposed because of particle issue come from exposure, develop or etching process, and we call it “Missing Contact Hole”.
Although the Critical Dimension(CD) value for the repaired defect meets mask shipping specification after repaired the missing contact hole by specific repair tools, it is still a main issue to find a suitable Energy-Defocus Window(E-D Window) for wafer exposure in wafer fabrication(Fab). The impacts will lead to extra mask remaking needed, mask scrapped, cost increased, and wafer production delay.
In the thesis we brought up an ”Over-Repair” idea. By means of increasing repair times or repair energy to improve repaired missing contact hole profile, the idea also solve the existing problem on failing to provide expected function as normal pattern by repaired missing contact hole.
We use two different Focus Ion Beam(FIB) repair tools, and apply “Over-Repair”(The repair frequency or dosage is more than “Normal Repair” which is calculated and defined by repair tool itself.) method on programmed defects, to study the characteristics of different repair conditions. Then we use Aerial Image Measurement System (AIMS) simulation tool to confirm the difference of CD, intensity and E-D window, and find out the best condition for missing contact hole repairing in mask manufacture. This condition will provide ample space for wafer exposure process window in Fab.
According to the experiment result, we have a conclusion as follows: For SEIKO/SIR-3000X repair tool, we could get the best E-D Window condition by increasing repair frequency about 74%. For FEI/Accura 850 repair tool, the repair condition calculated and defined by repair tool itself is already the best condition for missing contact hole repairing, it is no need to implement over repair method.
In the future we will apply our conclusion on missing contact hole repairing, to improve repair result for specific FIB repair tool, then enhance the efficiency of repair tools.
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| 參考文獻 |
1.莊達人，VLSI製造技術，三版二刷，高立圖書有限公司，台北市，235~258頁，1996年。
2.Feicke, “Evaluation of e-beam sensitive CARs for advanced mask making”, 24th Annual BACUS Symposium on Photomask Technology, pp.474~483, Monterey, California, USA, October 2004
3.龍文安，半導體奈米技術，二版，五南圖書出版股份有限公司，台北市，167~173、269~270、313~314、350~356、493~495
頁，2006年。
4.儀器總覽5 材料分析儀器，初版，行政院國家科學委員會精密儀
器發展中心(現改為：國家實驗研究院儀器科技研究中心)，新竹
市，22~24頁，1998年。
5.Mohamed S. El-Morsi, et al., “Gas flow modeling for focused ion beam(FIB) repair processes”, 24th Annual BACUS Symposium on Photomask Technology, pp.467~476, Monterey, California, USA, October 2004
6.李正中，薄膜光學與鍍膜技術，五版，藝軒出版社，台北市，
285~287頁，2006年。
7.Colbert Lu, et al., “AIMS-fab Spec for Defect Repair and Better Repair Profile”, 24th Annual BACUS Symposium on Photomask Technology, pp.1024~1034, Monterey, California, USA, October 2004
8.張勁燕，半導體製程設備，初版，五南圖書出版股份有限公司，
台北市，59~105頁，2000年。
9.Peter Van Zant, Microchip Fabrication, 4th Edition，姜庭隆譯，美商麥格羅．希爾國際股份有限公司，293~332頁，2001年。
10.柯富祥、蔡輝嘉，「光學微影術中光阻的發展趨勢」，奈米通訊，第五卷第三期國家奈米元件實驗室(NDL)，42~53頁。資料
來自網頁：http://www.ndl.org.tw/cht/ndlcomm/P5_3/42.htm
11.邱璨賓、施敏，「電子束微影技術」，科學發展月刊，第28卷第6期，行政院國家科學委員會，423~434頁，2000年。
12.Chris A. Mack, KLA-Tencor,「光學微影的新限制」，資料來自台灣半導體產業協會(Taiwan Semiconductor Industry Association, TSIA)網頁：
http://www.tsia.org.tw/Files/ShortMsg/200651118226.DOC
13.呂浩行，「數值孔徑和同調性的意義」，奈米通訊，第三卷第三期，國家奈米元件實驗室(National Nano Device Laboratories, NDL)，22~23頁。資料來自網頁：
http://www.ndl.org.tw/cht/ndlcomm/P3_3/22.htm
14.曾金池，「環形偏軸發光與調細式相移光罩最適化模擬與應用」，國立交通大學，碩士論文，1994年。
15.張俊彥主編，鄭晃忠審校，積體電路製程及設備技術手冊，初版，中華民國產業科技發展協進會與台灣電子材料與元件協會(現改
為：台灣電子材料與元件協會)出版，新竹市，353~374頁，1997
年。
16.B.J. Lin,“New λ/ NA scaling equation for resolution and depth-of-focus”, SPIE-BACUS Optical Microlithography XIII, pp. 759~764, Santa Clara America, March 2000
17.Jo Finders, Jan van Schoot, Peter Vanoppen, “KrF lithography for 130nm”, SPIE-BACUS Optical Microlithography XIII, pp. 192~205, Santa Clara America, March 2000
18.周岳霖，「0.35微米新型相轉移光罩之研究」，國立交通大學，碩士論文，1992年。
19.郭貴琦，「次微米鉻膜及相轉移光罩之研究」，國立交通大學，碩士論文，1992年。
20.鄭雋瀚，「相位光罩設計、製作與光學上的應用」，國立清華大學，碩士論文，2001年。
21.Colbert Lu, C.H. Lin, C.F. Wang, “Utilize AIMS Simulation to Estimate Profile Side-Wall Angle”, Photomask Technology 2006, Volume 6349 pp.634943-1~634943-10, Monterey, California, USA, September 2006
22. Hidemitsu Hakii, et al., “An evaluation of a new side-wall-angle measurement technique for mask patterns by CD-SEM”, SPIE-BACUS, Photomask and Next-Generation Lithography Mask Technology XVI, Volume 7379 pp.737922-1~737922-12, Yokohama, Japan, April 2009
23. S.W. Paek, et al., “Validation of Repair Process for DUV Attenuated Phase Shift Mask”, SPIE-BACUS Optical
Microlithography XIII, pp.612~620, Santa Clara America, March 2000
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