氮化鎵緩衝層磊晶跟場效電晶體直流和動態特性關聯之研究

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湯順偉(Shun-Wei Tang) 查詢紙本館藏

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論文名稱

氮化鎵緩衝層磊晶跟場效電晶體直流和動態特性關聯之研究
(DC and Transient Performance of AlGaN/GaN HEMTs with Different Buffer Layers)

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摘要(中)

本論文主要在低阻值矽 (111) 基板上進行氮化鋁鎵/氮化鎵高電子遷移率場效電晶體的製作，並探討不同緩衝層結構之元件直流與動態/暫態電性。實驗之磊晶試片於MOCVD腔體中採用不同的長晶條件成長緩衝層與氮化鎵層，研究不同緩衝層與氮化鎵層磊晶品質對製作成元件後之崩潰電壓與電流崩塌的效應。
本實驗在製作電晶體前，先對磊晶試片做一系列的材料分析與探討，其中藉由光激發致螢光頻譜 (PL) 儀探討兩種長晶條件下所成長的緩衝層之YL/BE ratio，也利用二次離子質譜儀解析磊晶結構的摻雜離子縱深對應，並有X射線繞射儀量測磊晶。
低YL/BE ratio、高XRD半高寬值與低碳摻雜濃度的磊晶所製作之元件擁有較高水平崩潰電壓、高垂直崩潰電壓及高三端元件崩潰電壓。接續為了降低元件漏電流，而製作金氧半場效電晶體並探討其直流電性。
本實驗針對蕭特基閘極場效電晶體與金氧半場效電晶體進行暫態量測分析，實驗結果指出structure B磊晶 (低YL/BE ratio、高XRD半高寬值與低碳摻雜濃度的磊晶) 的元件於高偏壓與高電場作用下，電流崩塌效應均明顯降低。此外觀察個別元件在施予不同偏壓後的回復狀況，並再搭配改變溫度的方式以探討個別對應的陷阱活化能階位置。

摘要(英)

This study investigates the DC and transient performance of AlGaN/GaN high electron mobility transistors with different buffer layers, which were deposited on the low-resistivity Si (111) substrate. Based on the distinct buffer layers and i-GaN layer, we investigated the device breakdown characteristics and current collapse phenomenan. The main targets of this thesis is to analyze the device performance that correlated to the quality of buffer layers.
For the evaluation of the epitaxial layer’s quality, photoluminescence(PL) spectroscopy was used to study the YL/BE ratio that corresponds to different buffer layers, followed by the secondary ion mass spectroscopy and XRD measurement.
　　The epitaxial layers with lower YL/BE ratio, higher XRD FWHM, and lower Carbon concentration can result in high horizontal and vertical material breakdown and device breakdown voltages. In order to suppress the gate leakage current, the devices with MIS structure has been fabricated and the gate leakage characteristic were improved.
　　In this study, the transient measurements to analyze the performance of schottky and MIS HEMTs have been carried out. According to the experiments, the results indicate the epilayers with low YL/BE ratio, higher XRD FWHM, and lower Carbon concentration have significiently suppressed the current collapse effect when the devices were operated at high stress and high electric field.

關鍵字(中)

★ 氮化鎵
★ 光激發致螢光頻譜
★ 二次離子質譜儀
★ 電流崩塌

關鍵字(英)

★ GaN
★ Photoluminescence
★ SIMS
★ Current collapse

論文目次

中文摘要 I
Abstract II
致謝 III
圖目錄 VI
表目錄 XII
第一章緒論 1
1.1 前言 1
1.2 氮化鎵高電子遷移率場效電晶體之發展 3
1.3 氮化鎵黃光頻譜與能帶邊緣放射比值之相關發展 6
1.4 論文之研究動機與目的 10
1.5 論文架構 10
第二章氮化鋁鎵/氮化鎵場效電晶體於矽基板之磊晶結構 12
2.1 前言 12
2.2 氮化鋁鎵/氮化鎵於矽基板之磊晶結構設計與材料特性分析 12
2.2.1 霍爾量測與分析 19
2.2.2光激發致螢光頻譜量測之磊晶分析 20
2.2.3 緩衝層X射線繞射儀量測磊晶之分析 31
2.2.4 二次離子質譜儀量測分析 34
2.3 結論 38
第三章氮化鋁鎵/氮化鎵閘極場效電晶體與金氧半場效電晶體之特性分析與比較 39
3.1 前言 39
3.2 氮化鋁鎵/氮化鎵場效電晶體與金氧半場效電晶體之製作流程 39
3.3 氮化鋁鎵/氮化鎵場效電晶體之直流特性分析 45
3.3.1 氮化鋁鎵/氮化鎵蕭特基閘極場效電晶體之直流特性分析 45
3.3.2 氮化鋁鎵/氮化鎵金氧半場效電晶體之直流特性分析 62
3.4 結論 72
第四章氮化鋁鎵/氮化鎵場效電晶體之電流崩塌效應量測分析 74
4.1 前言 74
4.2 電流崩塌效應之探討 74
4.3 氮化鋁鎵/氮化鎵場效電晶體之脈衝與變溫暫態量測之分析 78
4.3.1 氮化鋁鎵/氮化鎵蕭特基閘極場效電晶體與金氧半場效電晶體之動態電阻量測 84
4.3.2 氮化鋁鎵/氮化鎵蕭特基閘極場效電晶體之變溫動態電阻量測分析 92
4.4 結論 103
第五章結論與未來展望 105
參考文獻 107

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指導教授

辛裕明(Yue-Ming Hsin)

審核日期

2016-8-30

推文