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姓名	劉鎮瑋(Zhen-Wei Liu)  查詢紙本館藏	畢業系所	電機工程學系
論文名稱	氮化鎵異質接面場效電晶體之電流崩塌和熱儲存研究
相關論文	★ 電子式基因序列偵測晶片之原型 ★ 增強型與空乏型砷化鋁鎵/砷化銦鎵假晶格高電子遷移率電晶體: 元件特性、模型與電路應用 ★ 使用覆晶技術之微波與毫米波積體電路 ★ 注入增強型與電場終止型之絕緣閘雙極性電晶體佈局設計與分析 ★ 以標準CMOS製程實現之850 nm矽光檢測器 ★ 600 V新型溝渠式載子儲存絕緣閘雙極性電晶體之設計 ★ 具有低摻雜Ｐ型緩衝層與穿透型Ｐ＋射源結構之600V穿透式絕緣閘雙極性電晶體 ★ 雙閘極金氧半場效電晶體與電路應用 ★ 空乏型功率金屬氧化物半導體場效電晶體 設計、模擬與特性分析 ★ 高頻氮化鋁鎵/氮化鎵高速電子遷移率電晶體佈局設計及特性分析 ★ 氮化鎵電晶體 SPICE 模型建立 與反向導通特性分析 ★ 加強型氮化鎵電晶體之閘極電流與電容研究和長時間測量分析 ★ 新型加強型氮化鎵高電子遷移率電晶體之電性探討 ★ 氮化鎵蕭特基二極體與高電子遷移率電晶體之設計與製作 ★ 整合蕭特基p型氮化鎵閘極二極體與加強型p型氮化鎵閘極高電子遷移率電晶體之新型電晶體 ★ 垂直型氧化鎵蕭特基二極體於氧化鎵基板之製作與特性分析
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摘要(中)	氮化鎵材料因為具有快速的電子飽和速度與高崩潰電場，使得氮化鎵元件非常適合製作低串聯電組與高崩潰電壓的元件，主要應用在商業化 RF power amplification 和 HV power switching中。但氮化鋁鎵/氮化鎵在磊晶過程中會產生一些缺陷，這些缺陷會造成電流崩塌現象，對電晶體做為切換開關或是不同頻率操作下，是非常嚴重的問題。本論文將利用商業製程元件進行一系列元件的電流崩塌現象測量分析，並進一步深入討論缺陷所在跟元件特性關聯。 本論文選用穩懋半導體且其閘極長度為0.25 µm的HEMT元件進行研究。建立等校電路模型以萃取小訊號參數，並以動態量測方法經過關閉狀態後進入開啟狀態，觀察發生電流崩塌時小訊號參數變化，可以發現到其中源極電阻(Rs)、閘極與汲極間電容(CGD) 等內部元件參數在偏壓後有顯著的變化。 最後除了進行不同溫度下的小訊號參數測試研究外，進一步討論電流崩塌跟溫度的關聯性。還設計了在高溫下(150°C)進行熱儲存(Thermal Storage)，改變熱儲存之時間以觀察元件電性的改變。
摘要(英)	GaN based devices are suitable candidates of low on resistance and high breakdown device because of high electron velocity and breakdown field in GaN materials. The major applications include RF power amplifiers and power switching. However, there is a serious current collapse problem when transistor operated as a switch in high frequencies. The main cause is due to epitaxial layer quality, which effects in AlGaN/GaN and buffer layers act like traps which traps carriers and results in current collapse leading to a great impact on the DC and RF characteristics. This study analyzes device current collapse phenomenon using commercial GaN HEMT in small-signal model and gate-lag/drain-lag measurement. In small signal equivalent circuit modeling, extracted values of intrinsic elements in leaner and saturation regions were compared after different high-voltage off-state biases. The significant change in the intrinsic elements after high-voltage off-state biases are channel resistance (Rds) and gate-drain capacitance (Cgd), which may attribute to the GaN channel and buffer layers. Besides, small signal equivalent circuit model after high-voltage off-state was investigated under different temperatures. Gate-lag and drain-lag were measured at different temperatures to study the trapping effect. Because of temperature effect, trapping effect is alleviated at higher temperature thus current collapse is less severe. . Finally, a thermal storage was carried out on GaN HEMTs at 150 C under room temperature ambient. No degradation was found after 55 hours storage.
關鍵字(中)	★ 氮化鎵 ★ 場效電晶體	關鍵字(英)
論文目次	中文摘要 I Abstract II 目錄 III 圖目錄 VI 表目錄 VIII 第一章緒論 1 1.1 前言 1 1.2 氮化鎵材料特性 2 1.3 氮化鎵功率元件發展概況 4 1.4 本論文研究動機與架構 5 第二章 電流崩塌效應與可靠度分析 6 2.1 前言 6 2.2 電流崩塌效應 6 2.3 可靠度分析 14 2.4 結論 25 第三章 氮化鋁鎵/氮化鎵HEMTs之動態特性分析 26 3.1 前言 26 3.2 電流崩塌效應分析 26 3.2.1建立小訊號等效模型 27 3.2.2 線性區與飽和區之動態特性 35 3.2.3 變溫之動態特性量測 42 3.3 變溫之脈衝量測與分析 49 3.4 結論 56 第四章 熱儲存分析 58 4.1前言 58 4.2熱儲存（Thermal Storage）分析 58 4.3 結論 62 第五章 結論與未來展望 63 參考文獻 64
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指導教授	辛裕明(Yue-Ming Hsin)	審核日期	2016-10-20
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