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姓名 廖宜銘(Yi-Min Liao) 查詢紙本館藏 畢業系所 物理學系 論文名稱 紫外穿透低應力氮化矽鼓膜的研究與應用
(The study and application of low stress SiNxHy membrane)相關論文 檔案 [Endnote RIS 格式]
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摘要(中) 本實驗主要目的為以電漿輔助化學氣象沉積系統(Plasma Enhanced Chemical Vapor Deposition : PECVD)在矽基板上成長低應力氮化矽薄膜(low stress silicon nitride film)並研究探討低應力氮化矽薄膜的物理特性,並進一步將低應力氮化矽薄膜應用於微光機電系統,製作一種靜電控制的光衰減器。在我們的實驗中,薄膜應力可隨著成長工作壓力(working pressure)作微調,工作壓力越大,應力朝張應力(tensile stress)發展。利用這個關係,我們成功的調製出應力值為+170MPa與折射率為1.8的氮化矽薄膜。利用矽基板經過KOH溶液於背面開孔蝕刻移除後,厚度1um與面積5 x 5 mm²的平整氮化矽鼓膜(membrane)能成功的編製,並成功的在薄膜上製作光柵(grating)。除此之外,研究比較電漿輔助化學氣象沉積與低壓化學氣相沉積(Low Pressure Chemical Vapor Deposition : LPCVD)兩種低應力氮化矽薄膜的材料特性差異,發現電漿輔助化學氣象沉積的氮化矽鼓膜在紫外光UV波段有極佳的穿透效率,在240nm波段仍有50%的穿透效益,低壓化學氣相沉積的氮化矽鼓膜在400nm以下的短波長光幾乎被收,所以電漿輔助化學氣象沉積的氮化矽鼓膜較適合應用於紫外光波段。 摘要(英) Silicon nitride is one of the most common dielectric materials because it can be synthesized by various methods. In this work, SiNx films deposited on silicon by a Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor was investigated as an alternative method for low stress membrane fabrication. In our experiments, the stress of silicon nitride film is as a decreased function of working pressure. The low tensile stress 170 MPa and refractive index 1.8 of the film can be obtained at working pressure 750 mTorr. After KOH wet etching from backside of silicon substrate, a 5 x 5 mm² flat square membrane with thickness of 1µm was successfully fabricated. The UV transmittance of the free standing membrane was measured, which showed that UV light is transmissible down to 200nm wavelength. The chemical composition of the film analyzed by using X-ray photoelectron spectroscopy ( XPS ) and Fourier Transform Infrared Spectroscopy ( FTIR) showed it is a SiNxHy film. 關鍵字(中) ★ 低應力
★ 鼓膜
★ 氮化矽關鍵字(英) ★ low stress
★ membrane
★ silicon nitride論文目次 摘要
誌謝
第一章 簡介-----------------------------------------------------------------------8
第二章 低應力氮化矽薄膜---------------------------------------------------10
2.1 低應力薄膜--------------------------------------------------------------10
2.1.1 薄膜應力的定義----------------------------------------------------10
2.1.2 薄膜應力的成因----------------------------------------------------10
2.2 電漿輔助化學氣象沉積(Plasma Enhanced Chemical Vapor Deposition : PECVD)的基本原理------------------------------------11
2.3 電漿輔助化學氣象沉積(PECVD)氮化矽薄膜介紹--------------13
2.3.1電漿輔助化學氣象沉積(PECVD)氮化矽薄膜特性-----------13
2.3.2使用電漿輔助化學氣象沉積(PECVD)的原因----------------14
2.3.3影響薄膜應力的參數----------------------------------------------15
第三章 氮化矽鼓膜製作與薄膜量測分析---------------------------------22
3.1 氮化矽鼓膜製作--------------------------------------------------------22
3.1.1 薄膜成長-------------------------------------------------------------22
3.1.2 曝光顯影-------------------------------------------------------------23
3.1.3 乾蝕刻----------------------------------------------------------------25
3.1.4 矽晶片的非等向性蝕刻-------------------------------------------25
3.2 薄膜材料分析-----------------------------------------------------------25
3.2.1 薄膜應力(stress)----------------------------------------------------25
3.2.2 折射率(refractive index : n)、消光係數(extinction coefficient : k)、介電常數(dielectric constant:ε)與膜厚--------------------26
3.2.3 化學鍵(chemical bond)分析--------------------------------------26
3.2.4 化學成分(chemical composition)分析--------------------------27
3.2.5 薄膜穿透光譜(transmission spectrum)--------------------------27
第四章 SiNxHy薄膜之物理特性---------------------------------------------34
4.1 薄膜應力-----------------------------------------------------------------34
4.2 沉積速率-----------------------------------------------------------------35
4.3 折射率--------------------------------------------------------------------36
4.4 化學成分分析-----------------------------------------------------------36
4.5 化學鍵分析--------------------------------------------------------------38
4.6 光學能帶(optical band gap)-------------------------------------------39
4.7 BOE蝕刻率--------------------------------------------------------------42
第五章 低應力氮化矽薄膜的元件特性------------------------------------61
5.1 簡介-----------------------------------------------------------------------61
5.2 元件設計原理-----------------------------------------------------------61
5.3實驗與模擬---------------------------------------------------------------61
5.4結果與討論---------------------------------------------------------------62
第六章 結論---------------------------------------------------------------------69
參考資料--------------------------------------------------------------------------72參考文獻 參考資料
[1] J.Hui Et al, IEEE Trans. Electron Dev. ED-29, P554, 1982
[2] C. Van Rijn, Van der Wekken, W. Nijdam, M. Elwenspoek, “IEEE J.MEMS”, 48, (1997).
[3] Jinho Ahn and Katsumi Katsumi Suzuki, Appl. Phys. Lett.64(1994)
[4] Marc Madou, Fundamentals of microfabrication (CRC Press, 1997), 468-482.
[5] For an overview of the recent developments in optical MEMS, Dig. IEEE/LEOS
[6] M. Mawda. K. Lkeda, J. Appl. Phys. Vol 83, NO. 7,1 April 1998
[7] P. J. French et al, Sensors and Actuators A 58 (1997) 149-157
[8] James. M. Olson, Materials Science in Semiconductor Processing 5 (2002) 51-60
[9] M. A. El Khakani, J. Vac. Sci. Technol.B, 2930, 1993
[10] Tsuneaki Ohta, J. Vac. Sci. Technol.B, 585, 1994
[11]Philip FK, Graydon BL. Characterization of solid surface. New York: Plenum Press.
[12] Moon J, Ito T, Hiraki A. Thin Solid Films 1993;229:93
[13] Hirohata Y, Shimamoto N, Yamashima T, Yabe K. Thin Films 1994;253:425-9
[14] Mirsch S, Bauer J, Phys Stat Sol (a) 1974;26:579-84
[15] F. Giorgis et al. Thin Solid Films 307 (1997) 298-305
[16] W. A. P. Classen. J. Electrochem. Soc. April. 1985. vol.123. no4. p893.
[17]W. A. Lanford and M. J. Rand, J. Appl. Phys 49,2473(1978)
[18]C. Popov et al, Thin Solid Films, 337-378(2000)156-162
[19]Row Chow et al,J. Apl. Phys. Vol. 53, No. 8, Agust 1982.
[20]G. Lavareda et al, Thin Solid Films, 427(2003)71-76。
[21] Optical properties of solid, NATO Advanced Study Institute(1996 Freiburg im Breisgau), New York : Plenum Press, 1969.
[22]Z. Yin and F. W. Smith, Physical Review B, Vol42 No6, 1990.
[23]M. Ohring, The Material Science of Thin Films(Academic Press, New Jersey, 1992)
[24]M. Madou, Fundamentals of Microfabrication(CRC Press, New York, 1997)
[25]L. Smith et al, Mat. Res. Symp. Proc, Vol165, 1990
[26]Schuegraf, Klaus K. ed,Thin Film Deposition Process and Techniques(Park Ridge, NJ/Noyes Publications/1988)
[27]Azzam, R. M. A, Ellipsometry and polarized light(Amsterdam, New York, 1977)指導教授 紀國鐘(Gou-Chung Chi) 審核日期 2004-6-21 推文 plurk
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