鍺銻碲相變化奈米薄膜之奈米尺度光熱性質的研究

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姓名

徐豪汶(Hao-Wen Hsu) 查詢紙本館藏

畢業系所

物理學系

論文名稱

鍺銻碲相變化奈米薄膜之奈米尺度光熱性質的研究
(Study of Nanoscale Optical-thermal Properties of Ge2Sb2Te5 Phase-change Nano Thin Film)

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摘要(中)

本論文利用雷射光泵探系統(pump and probe laser system)在Ge2Sb2Te5相變化薄膜上寫入記錄點，並研究在不同雷射光強度與脈衝時間的條件下，形成記錄點的過程並在此過程中，透過讀持續探測雷射光得到的反射強度變化，可用來分析記錄點寫入過程中，相變化記錄層的光學與熱學變化過程，鑑定與判別所形成的記錄點狀態。為了解析小於繞射極限的記錄點，並瞭解實際的記錄點大小，實驗中也採用導電式原子力顯微儀(C-AFM)來研究記錄點的電性及記錄點的表面形貌圖像，由導電式原子力顯微儀的結果，計算Ge2Sb2Te5相變化薄膜之有效作用比熱。在起始狀態為初始化狀態時，以雷射光功率為3mW，脈衝時間為50ns寫入紀錄點的實驗中，所計算出的薄膜之有效作用比熱為1.381 J/g-℃。

摘要(英)

The purpose of the study is to utilize a pump-probe laser system, a static tester, to analyze the formation mechanism and the thermal properties of recorded marks on the thin film of the phase-change material Ge2Sb2Te5. The variation of reflectance on the phase-change recording layer can be acquired simultaneously as the recorded mark is being written. The information of optical reflectance on the interface of the phase-change recording layer can help observe marks written with either different powers or durations, respectively. The detailed change of reflectance provide us criterion to analyze both the formation mechanism of recorded marks and the state of recorded area on the recording layer. With the help of conductive-atomic force microscopy (C-AFM), not only the crystalline, as-deposited, and amorphous states can be characterized but also the area of recorded marks can be determined especially for the size of marks below diffraction limit. The area of recorded marks with respect to laser writing power or laser duration suggest that both writing power and laser duration have strong influence on the size of recorded marks. The effective specific heat can also be estimated by analyzing the relation between absorption power and area of recorded marks.

關鍵字(中)

★ 相變化光碟
★ 記錄點
★ 導電式原子力顯微儀
★ 雷射光泵探系統
★ 相變化材料
★ 硫屬合金

關鍵字(英)

★ conductive AFM
★ recording mark
★ phase-change disk
★ phase-change material
★ Chalcogenide
★ pump and probe laser system

論文目次

論文摘要………………………………………………………………....I
Abstract…………………………………………………………………..II
致謝……………………………………………………………………..III
目錄……………………………………………………………………..IV
圖目錄…………………………………………………………………..VI
表目錄………………………………………………………………….XII
第一章緒論
1.1. 相變化過程....................................................................................1
1.2. 結晶相與非晶相的轉換................................................................1
1.3. 相變化光碟之記錄原理................................................................3
1.5. 相變化記錄材料............................................................................9
1.6. 相變化材料之結晶模型..............................................................11
1.7. Ge-Sb-Te 的材料特性..................................................................12
第二章實驗儀器架構
2.1. 光學薄膜製作..............................................................................16
2.2. 光學寫入系統..............................................................................19
2.3. 記錄點檢測系統..........................................................................26
2.4. 薄膜光譜測量..............................................................................32
第三章、實驗結果與分析
3.1. 相變薄膜材料之光學性質研究..................................................36
3.2. 相變化記錄點之 C-AFM量測....................................................42
3.3. C-AFM 導電性質影像與 CCD光學影像的比較......................52
第四章、記錄點尺寸之分析與討論................... 57
4.1. 記錄點尺寸之計算方式..............................................................57
4.2. 反射強度與記錄點大小的相關性..............................................61
4.3. 熱學量的估算..............................................................................63
第五章、結論..................................... 67
參考文獻........................................ 69

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指導教授

陳宣毅、蔡定平
(Hsuan-Yi Chen、Din-Ping Tsai)

審核日期

2006-7-6

推文