鍺銻碲相變化奈米薄膜之奈米尺度光熱性質的研究

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：61

、訪客IP：18.218.234.83

姓名

徐豪汶(Hao-Wen Hsu) 查詢紙本館藏

畢業系所

物理學系

論文名稱

鍺銻碲相變化奈米薄膜之奈米尺度光熱性質的研究
(Study of Nanoscale Optical-thermal Properties of Ge2Sb2Te5 Phase-change Nano Thin Film)

相關論文

★ 波在一維系統中的傳播與局域化	★ 生物膜黏著引發的相分離—等效膜勢與數值模擬
★ 非平衡生物膜上的區塊形成	★ 液滴上的彈性網絡
★ 受體配體叢集在外力下的理論研究	★ 兩板間黏著叢集的強度
★ 粒子黏著於生物膜所引發的細胞攝入作用之物理研究	★ 黏著叢集在時變外力下的強度
★ 滲透壓對單層巨型微胞的影響	★ 模擬被clathrin蛋白質覆蓋的板塊狀胞吞作用
★ T細胞受體活化反應之模型	★ Modeling geometrical trajectories of actin-based motility
★ 隨機布耳網路在多連線且臨界情形下的特性	★ 模擬脂質雙層膜上的分子機器
★ 組織動力學之建模	★ Seeking bistabilities in toy models of epithelial tissues

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

至系統瀏覽論文 ( 永不開放)

摘要(中)

本論文利用雷射光泵探系統(pump and probe laser system)在Ge2Sb2Te5相變化薄膜上寫入記錄點，並研究在不同雷射光強度與脈衝時間的條件下，形成記錄點的過程並在此過程中，透過讀持續探測雷射光得到的反射強度變化，可用來分析記錄點寫入過程中，相變化記錄層的光學與熱學變化過程，鑑定與判別所形成的記錄點狀態。為了解析小於繞射極限的記錄點，並瞭解實際的記錄點大小，實驗中也採用導電式原子力顯微儀(C-AFM)來研究記錄點的電性及記錄點的表面形貌圖像，由導電式原子力顯微儀的結果，計算Ge2Sb2Te5相變化薄膜之有效作用比熱。在起始狀態為初始化狀態時，以雷射光功率為3mW，脈衝時間為50ns寫入紀錄點的實驗中，所計算出的薄膜之有效作用比熱為1.381 J/g-℃。

摘要(英)

The purpose of the study is to utilize a pump-probe laser system, a static tester, to analyze the formation mechanism and the thermal properties of recorded marks on the thin film of the phase-change material Ge2Sb2Te5. The variation of reflectance on the phase-change recording layer can be acquired simultaneously as the recorded mark is being written. The information of optical reflectance on the interface of the phase-change recording layer can help observe marks written with either different powers or durations, respectively. The detailed change of reflectance provide us criterion to analyze both the formation mechanism of recorded marks and the state of recorded area on the recording layer. With the help of conductive-atomic force microscopy (C-AFM), not only the crystalline, as-deposited, and amorphous states can be characterized but also the area of recorded marks can be determined especially for the size of marks below diffraction limit. The area of recorded marks with respect to laser writing power or laser duration suggest that both writing power and laser duration have strong influence on the size of recorded marks. The effective specific heat can also be estimated by analyzing the relation between absorption power and area of recorded marks.

關鍵字(中)

★ 相變化光碟
★ 記錄點
★ 導電式原子力顯微儀
★ 雷射光泵探系統
★ 相變化材料
★ 硫屬合金

關鍵字(英)

★ conductive AFM
★ recording mark
★ phase-change disk
★ phase-change material
★ Chalcogenide
★ pump and probe laser system

論文目次

論文摘要………………………………………………………………....I
Abstract…………………………………………………………………..II
致謝……………………………………………………………………..III
目錄……………………………………………………………………..IV
圖目錄…………………………………………………………………..VI
表目錄………………………………………………………………….XII
第一章緒論
1.1. 相變化過程....................................................................................1
1.2. 結晶相與非晶相的轉換................................................................1
1.3. 相變化光碟之記錄原理................................................................3
1.5. 相變化記錄材料............................................................................9
1.6. 相變化材料之結晶模型..............................................................11
1.7. Ge-Sb-Te 的材料特性..................................................................12
第二章實驗儀器架構
2.1. 光學薄膜製作..............................................................................16
2.2. 光學寫入系統..............................................................................19
2.3. 記錄點檢測系統..........................................................................26
2.4. 薄膜光譜測量..............................................................................32
第三章、實驗結果與分析
3.1. 相變薄膜材料之光學性質研究..................................................36
3.2. 相變化記錄點之 C-AFM量測....................................................42
3.3. C-AFM 導電性質影像與 CCD光學影像的比較......................52
第四章、記錄點尺寸之分析與討論................... 57
4.1. 記錄點尺寸之計算方式..............................................................57
4.2. 反射強度與記錄點大小的相關性..............................................61
4.3. 熱學量的估算..............................................................................63
第五章、結論..................................... 67
參考文獻........................................ 69

參考文獻

[1] R. Zallen, The Physics of Amorpous Solids (John Wiley and Sons, New York,
1983)
[2] T. Ohta , “Phase-Change Optical Memory Promotes the DVD Optical Disk,” J.
Opt. Adv. Mat. 3, 609 (2001).
[3] M. Libera, M Chen, “Multilayered Thin-Film Materials for Phase-Change
Erasable Storage,” MRS. Bulletin 15, 40 (1990)
[4] Henk van Houten and Wouter Leibbrandt, “Phase change recording,”
communications of the acm, 43, 64 (2000).
[5] Noboru Yamada, Mayumi Otoba, Katsumi Kawahara, Naoyasu Miyagawa,
Hiroyuki Ohta, Nobuo Akahira and Toshiyuki Matsunaga, “Phase-change
optical disk having a nitride interface layer,” Jpn. J. Appl. Phys. 37,
2104(1998
)
[6] M. Chen, K. A. Rubin, V. Marrello, U. G. Gerber, V. B. Jipson, “Reversibility
and Stability of Tellurium Alloys for Optical Data Storage Applications,” Appl.
Phys. Lett. 46, 734 (1985).
[7] M. Okada, S. Ohkubo, T. Ide, M. Murahata, H. Honda and T. Matsui,
“High-density phase-change optical disk with a Si reflective layer,” Proc.
SPIE. 2514, 329 (1995).
[8] S.R. Ovshinsky, “Reversible Electrical Switching Phenomena in Disordered
Structures,” Phys. Rev. Lett. 21, 1450 (1968).
[9] J.Feinleib, J.deNeufville, S.C. Moss, and S.R.Ovshisky, “Rapid reversible
light-induced crystallization of amorphous semiconductors,” Appl. Phys.
Lett. 18, 254 (1971).
[10] J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman, and B. A. J. Jacobs,
“Laser-induced crystallization phenomena in GeTe-based alloys. I.
Characterization of nucleation and growth,” J. Appl. Phys. 78, 4096 (1995).
[11] G. F. Zhou, H. J. Borg, J. C. N. Rijpers, and M. Lankhorst, “Crystallization
behavior of phase change materials: comparison between nucleation- and
growth-dominated crystallization,” Optical Data Storage, 2000. Conference
Digest, 2000
[12] N. Kh. Abrikosov and G. T. Danilova-Dobryakova, Izv. Akad. Nauk SSSR,
69
Neorg. Mater. 1, 204 (1965)
[13] Benno Tieke, Martijn Dekker, Nicola Pfeffer, Roel van Woudenberg, Guo-Fu
Zhou, and Igolt P. D. Ubbens, “High data-rate phase-change media for the
digital video recording system,” Jpn. J. Appl. Phys. 39, 762 (2000)
[14] R. Kojima, S. Okabayashi, T. Kashihara, K. Horai, and N. Yamada, Proc. Symp.
on Phase-Change Recording 8, 35 (1996) (in Japanese)
[15] Noboru Yamada, Eiji Ohno, Kenichi Nishiuchi, Masatoshi Takao, and Nobuo
Akahira, “Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous
thin films for an optical disk memory,” J. Appl. Phys. 69, 2849 (1991)
[16] Noboru Yamada, Toshiyuki Matsunaga, “Structure of laser-crystallized
Ge Sb Te sputtered thin films for use in optical memory,” J. Appl. Phys. 88,
2 2+x 5
7020 (2000)
[17] Toshiyuki Matsunaga, Noboru Yamada, and Yoshiki Kubot, “Structures of
stable and metastable Ge
Sb Te , an intermetallic compound in GeTe-Sb Te
2 2 5 2 3
pseudo-binary systems,” Acta Cryst. B 60, 685 (2004)
[18] Toshiyuki Matsunaga, and Noboru Yamada, “Crystallographic studies on
high-speed phase-change materials used for rewritable optical recording
disks,” Jpn. J. Appl. Phys. 43, 4704 (2004)
[19] 高宗聖，氧化鋅複合材料奈米薄膜之近場超解析結構，碩士論文，台灣大
學物理學研究所，(2004)
[20] Masud Mansuripur, J. Kevin Erwin , Warren Bletscher, Pramod Khulbe,
Kayvan Sadeghi, Xiaodong Xun, Anurag Gupta, and Sergio Bj. Mendes,
“Static tester for characterization of phase-change, dye-polymer, and
magneto-optical media for optical data storage,” Appl. Opt. 38, 7095 (1999).
[21] Pramod K. Khulbe, Xiaodong Xun, and M. Mansuripur, “Crystallization and
Sb Te thin-film sample under pulsed laser
amorphization studies of a Ge
2 2.3 5
irradiation,” Appl. Opt. 39, 2359 (2000)
[22] Xiaodong Xun, James K. Erwin, Warren Bletscher, Jinhan Choi, Senta
Kallenbach, and Masud Mansuripur, “Crystallization Studies on Phase-Change
Optical Recording Media by Use of a Two-Dimensional Periodic Mark Array,”
Appl. Opt. 40, 6535 (2002)
[23] Pramod K. Khulbe, Terril Hurst, Michikazu Horie, and Masud Mansuripur,
Te Films in Optical
“Crystallization Behavior of Ge-Doped Eutectic Sb
70 30
70
Disks,” Appl. Opt. 41, 6220 (2002)
[24] J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman, and B. A. J. Jacobs,
“Laser-induced crystallization phenomena in GeTe-based alloys. I.
Characterization of nucleation and growth,” J. Appl. Phys. 78, 4096 (1995).
[25] Y.-C. Hsien, M. Mansuripur, J. Volkmer, and A. Brewen, “Measurement of the
thermal coefficients of nonreversible phase-change optical recording films,”
Appl. Opt. 36, 886 (1997)
[26] Gerd M. Fischer, Briian Medower, Robert Revay, and Masud Mansuripur,
“Thermal properties and crystallization dynamics of a phase-change alloy of
write-once optical data storage,” Appl. Opt. 41, 1998 (2002)
[27] 劉宏威，相變化記錄層與奈米近場光學多層膜結構之光熱反應研究，碩士
論文，台灣大學物理學研究所，(2005)
[28] Mortimer Abramowitz, “Microscope: Basics and Beyond,” Olympus Microscopy
Resource Center (2003
[29] “MediaTest-I_manual,” Toptica Phonetic AG (2003)
[30] G. Binnig, C. F. Quate, and Ch. Gerber, “Atomic Force Microscope,” Phys. Rev.
Lett. 56, 930 (1986)
[31] Noboru Yamada, Eiji Ohno, Kenichi Nishiuchi, Masatoshi Takao, and Nobuo
Akahira, “Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous
thin films for an optical disk memory,” J. Appl. Phys. 69, 2849 (1991)
[32] Pramod K. Khulbe, Ewan M. Wright, and Masud Mansuripur, “Crystallization
behavior of as-deposited, melt quenched, and primed amorphous states of
Ge2Sb2.3Te5 films,” J. Appl. Phys. 88, 3926 (2000)
[33] Yoshiaki Nakayoshi, Yoshihiko Kanemitsu, Yasuaki Masumoto and Yoshihito
Maeda, “Dynamics of Rapid Phase Transformations in Amorphous GeTe
Induced by Nanosecond Laser Pulses,” Jpn. J. Appl. Phys. 31, 471 (1992)
[34] Masud Mansuripur, J. Kevin Erwin, Warren Bletscher, Pramod Khulbe, Kayvan
Saseghi, Xiaodong Xun, Anurag Gupta, and Sergio B. Mendes, “Static tester
for chatacterization of phase-change, dye-polymer, and magneto-optical media
for optical data storage,” Appl. Opt. 38, 7095 (1999)
[35] Gerd M. Fischer, Brian Medower, Robert Revay, and Masud Mansuripur,
“Thermal properties and crystallization dynamics of a phase-change alloy for
write-once optical data storage,” Appl. Opt. 39, 1998 (2002)
71
[36] 《ImageJ》是由美國國家人體健康研究所(NIH)所發展的科學影像處理軟體。
[37] Shih Kai Lin, I Chun Lin, and Din Ping Tsai, “Characterization of nano
recorded marks at different writing strategies on phase-change recording layer
of optical disks,” Optical Express 14, 4452 (2006)
[38] Noboru Yamada, Eiji Ohno, Kenichi Nishiuchi, Masatoshi Takao, and Nobuo
Akahira, “Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous
thin films for an optical disk memory,” J. Appl. Phys. 69, 2849 (1991)
[39] V. Weidenhof, N. Pirch, I. Friedrich, S. Ziegler, and M. Wuttig, “Minimum
time for laser induced amorphization of Ge2Sb2Te5 films,” J. Appl. Phys. 88,
657 (2000)
[40] Chubing Peng, Lu Cheng, and M. Mansuripur, “Experimental and theoretical
investigations of laser-induced crystallization and amorphization in
phase-change optical recording media,” J. Appl. Phys. 82, 4183 (1997).

指導教授

陳宣毅、蔡定平
(Hsuan-Yi Chen、Din-Ping Tsai)

審核日期

2006-7-6

推文