溫度效應對矽基板上的氮化鎵有機金屬氣相沉積法之探討

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傅國榮(Guo-Rong Fu) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

溫度效應對矽基板上的氮化鎵有機金屬氣相沉積法之探討
(Study of temperature effect on the growth of GaN-on-Si with metal-organic chemical vapor deposition)

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摘要(中)

近年來，氮化鎵成長於矽基板對於製作光電半導體元件是個非常重要的技術，然而氮化鎵成長於矽基板面臨了幾個重大的問題，其一為氮化鎵跟矽基板的晶格差異過大，導致磊晶完成後氮化鎵內部會含有大量的缺陷，而這些缺陷對高電子遷移率電晶體來說會降低電子在二維電子氣內的遷移率，此外缺陷也會降低發光二極體及太陽能電池的效率；其二為氮化鎵跟矽基板之間的熱膨脹係數差異過大，在磊晶過程升降溫中會導致基板彎曲最終氮化鎵會發生龜裂，影響之後原件的製程。
為了提升氮化鎵半導體於矽基板上的磊晶品質，本研究探討基板溫度對氮化鎵表面平整度的影響。我們先以低溫的氮化鋁薄膜作為磊晶成核層，以幫助氮化鎵在高溫時的橫向癒合。使用低溫的目的，是要避免腔體表面的氮化物雜質裂解，因而污染矽基板與氮化鎵的界面。成核層完成後，再以高、低溫交錯的方式，成長氮化鋁與氮化鋁鎵，作為氮化鎵的應力緩衝層。我們發現，氮化鋁/氮化鋁鎵應力緩衝層的磊晶溫度，對氮化鎵的晶格癒合與最終的表面平整度，有很密切的關聯。

摘要(英)

In recent years, the growth of GaN-on-silicon has attracted much research interests because of its low cost. However, some issues remain to be solved: (1) There is a large lattice mismatch between GaN and silicon, and this leads to high density of crystal defects, reducing the electron mobility in transistors. In addition, the defects also hamper the quantum efficiencies of LEDs and solar cells; (2) The huge mismatch in thermal expansion mismatch between the two materials even causes cracks, making epilayers unsuitable for device fabrication.
To address the issues, we adopted low-temperature AlN as the nucleation layer for the growth of GaN-on-Si. The low-temperature AlN not only provides the nucleation seeds for the subsequent GaN growth, but also prevent the thermo-decomposition of the impurities formed on the reactor wall. The low-temperature AlN buffer is followed by a AlN/AlGaN layer grown at varied temperatures to release the lattice strain. We found the substrate temperature of the AlN/AlGaN strain-engineering layer plays a decisive role in the surface morphology of subsequent GaN layer. Details characterization results and discussions will be presented.

關鍵字(中)

★ 氮化鎵
★ 矽基板
★ 有機金屬氣相沉積儀

關鍵字(英)

★ GaN
★ Silicon substrate
★ MOCVD

論文目次

中文摘要 IV

ABSTRACT V

誌謝 VI

目錄 VII

圖目錄 IX

表目錄 XI

中英文名詞縮寫對照表 XII

第一章、緒論 1
1.1氮化物材料結構與特性 1
1.2矽基板的優勢 5
1.3 矽基板的挑戰 7
1.4研究動機與章節架構 9
第二章、實驗方式與儀器介紹 10
2.1有機金屬化學氣相沉積儀簡介 10
2.2 掃描式電子顯微鏡簡介 13
2.3 X光繞射儀簡介....... ...14
第三章、氮化鎵成長於矽基板製備 16
3.1於不同溫度成長氮化鋁之緩衝層 16
3.2於不同溫度成長氮化鎵 22
3.3氮化鎵成長於不同參雜之矽基板比較 30
第四章、結論與未來改進方向 33
參考文獻 35

參考文獻

[1] T. Takayama, et al., "Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model," Journal of Applied Physics 90, 2358-2369 (2001).
[2] H. Otte, et al., "Crystallographic Formulae for Hexagonal Lattices," physica status solidi (b) 9, 441-450 (1965).
[3] H. Masui, et al., "Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges," IEEE Transactions on Electron Devices 57, 88-100 (2010).
[4] O. Ambacher, et al., "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures," Journal of Applied Physics 85, 3222-3233 (1999).
[5] P. Bhattacharya, "Semiconductor Optoelectronic Devices 2nd ed.", New
Jersey: Prentice Hall, 23(1997).
[6] U. Mishra, et al., "AlGaN/GaN HEMTs-an overview of device operation and applications," Proceedings of the IEEE 90, 1022-1031 (2002).
[7] J. Ibbetson, et al., "Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors," Applied Physics Letters 77, 250-252 (2000).
[8] 網路資料︰郭子菱，矽基LED量產在即　藍寶石基板價格戰醞釀開打
http://www.mem.com.tw/article_content.asp?sn=1208310013&page=2
[9] A. Krost, et al., "GaN-Based Devices on Si," physica status solidi (a) 194, 361-375 (2002).
[10] A. Krost, et al., "In situ monitoring of the stress evolution in growing group-III-nitride layers," Journal of Crystal Growth 275, 209-216 (2005).
[11] D. Zhu, et al., "Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates," Journal of Applied Physics 109, 014502 (2011).
[12] R. Clos, et al., "Wafer curvature in the nonlinear deformation range," physica status solidi (a) 201, R75-R78 (2004).
[13] K. Seshan, Handbook Of Thin-Film Deposition Processes And Techniques (Noyes Publications/William Andrew Pub., 2002).
[14]蔡勝傑，「提升氮化銦鎵/氮化鎵多重量子井發光二極體之光學表現」，國立成功大學材料科學及工程學系，博士論文，民國105年
[15] J. Hus, et al., "Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si," Advanced Materials 27, 4845-4850 (2015).
[16] J. Bläsing, et al., "The origin of stress reduction by low-temperature AlN interlayers," Applied Physics Letters 81, 2722-2724 (2002).
[17] A. Able, et al., "Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers," Journal of Crystal Growth 276, 415-418 (2005).
[18] S. Fujikawa, et al., "284–300 nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) Substrates," Applied Physics Express 4, 061002 (2011).
[19] K. Köhler, et al., "Growth and electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content," physica status solidi (a) 206, 2652-2657 (2009).
[20] S. Jang, et al., "Investigation of Buffer Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Using a Simple Test Structure," JSTS:Journal of Semiconductor Technology and Science 14, 478-483 (2014).

指導教授

賴昆佑(Kun-Yu Lai)

審核日期

2017-7-11

推文