| 摘要(英) |
In this paper, we use the epitaxy wafer of InP Substrates to make the PIN structure of the Mesa-type light detector, and the surface of the element was treated with a solution of ammonium sulfide ((NH4) 2Sx), to further explore the effect of Vulcanization characteristics on the characteristics of the element.. After the element in the paper by vulcanization treatment, showing some good component characteristics, such as low leakage current, low capacitance and better high frequency characteristics. In order to block the leakage current, we further use silicon nitride (SiN) plus silicon dioxide (SiO2) multilayer passivatio. Calculate, measure and analyze trends and eye pattern of I-V and C-V.
Compared with the planar structure, the advantages of mesa-type structure are low parasitic capacitance, because the parasitic area around the element is removed during the manufacturing process. So in the same light area, the mesa-type structure has a lower capacitance value.
First of all, we explore the use of ammonium sulfide solution, made of indium phosphide light detector on the surface passivation treatment, to study its effect on component characteristics, and to compare the results with those without vulcanization. From the experimental results we know that the surface of indium phosphide after vulcanization treatment, in addition to remove the original oxide layer of the surface,
the abler to form a sulfur bond on the surface of the semiconductor to prevent re-oxidation, and therefore can effectively reduce the surface bonding Charge and the corresponding capacitance. When the dark current is reduced from 6.46 × 10-11 A to 4.56 × 10-11 A at -10 V, the capacitance value is reduced from 0.534 pF to 0.313 pF at a voltage of 0 V; reduced from 0.294 pF to 0.169 at bias -5V PF. Thus, the vulcanized element has better electrical characteristics.
On the other hand, in order to more effectively block the leakage current, we use silicon nitride (SiN) has a good ladder coverage, and silicon dioxide (SiO2) has the characteristics which can grow to a certain thickness without cracking, the silicon nitride superimposed on silicon dioxide is formed into a multilayer passivatio passivation layer and is compared with a single layer of silicon nitride passivation layer.
If the element is treated with ammonium sulfide ((NH4) 2Sx) solution, the dark current is reduced from 4.56 × 10-11 A to 2.37 × 10-11A at -10 V. It is proved that the multilayer passivatio can effectively combine the advantages of the two materials and effectively block the leakage current. And in the eye pattern to verify the production of the element data transmission can reach 12.5Gbit / sec and clearly see the eye pattern (no error). |
| 參考文獻 |
[1] H. J. R. Dutton, Understanding Optical Communications, IBM, 1998
[2] P. Chakrabarti, Optical Fiber Communication, 2015
[3] 李揚漢等編著，光纖通信網路Optical Communication Networks，五南出版社, 2007
[4] Jeong-Ju Yoo , et al. “A WDM-Ethernet hybrid passive optical network architecture”;IEEE Advanced Communication Technology, 2006
[5] https://www.fiberoptictel.com/difference-between-gpon-and-epon-ii/
[6] FS.COM, “Comparison of EPON and GPON”, 2015
[7] 朱洪，下一代PON技术打造Gigaband千兆全光网络，中国通信网，2016
[8] http://hyperphysics.phy-astr.gsu.edu/hbase/solids/pnjun.html
[9] https://www.coursehero.com/file/8285990/Lect12-photodiode-detectors
[10] Z. Z. Bandic, et al. “High voltage (450 V) GaN Schottky rectifiers”, Appl. Phys. Lett., Vol.74, pp.1266, 1999
[11] J. W. Johnson, et al. “Breakdown Voltage and Reverse Recovery Characteristics of Free-Standing GaN Schottky Rectifiers”, IEEE Transactions on Electron Devices, 2002
[12] 汪建民，材料分析，中國材料科學學會，2001
[13] https://en.wikipedia.org/wiki/File:Stylus_Instrument.svg
[14] A. P. Zhang, et al. “Vertical and lateral GaN rectifiers on free-standing GaN substrates”, Appl. Phys. Lett., 2001
[15] J. Z. Zheng, D. Tan, P. Chew, and L. Chan, “Characterization and in-line control of UV-transparent silicon nitride films for passivation of FLASH devices”, Place of Publication: Austin, TX, USA Country of Publication: USA, 1996
[16] Lee, “Characterization of UV Transparent Films for FLASH devices,” DCMIC conference Feb. 25 2002.
[17] D. Haiping, et al. “Mechanisms of Plasma-Enhanced Silicon Nitride Deposition Using SiH4/N2 Mixture,” Journal of the Electrochemical Society, vol. 128, pp. 1555, 1981.
[18] K. Maeda and I. Umezu, “Atomic microstructure and electronic properties of a-SiNx:H deposited by radio frequency glow discharge,” Journal of Applied Physics, vol. 70, pp. 2745, 1991.
[19] Shreepad Karmalkar, “Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors”, Appl. Phys. Lett., Vol.82, pp.3976, 2007
[20] P. W. Bohn and R. C. Manz, “a multiresponse factorial study of reactor parameters in plasma-enhanced CVD growth of amorphous-silicon nitride,” Journal of the Electrochemical Society, vol. 132, pp. 1981, 1985.
[21] Takuma Nanjo, “Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high electron mobility transistor characteristics”, Appl. Phys. Lett., Vol. 88, pp. 043503, 2006
[22] Junji Kotani, “Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures”, Appl. Phys. Lett., Vol.91, pp.093501, 2007
[23] E. J. Miller, “Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope”, Journal of applied Physics, Vol. 91, pp. 9821, 2002
[24] N. I. Kuznetsov, “Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates”, Appl. Phys. Lett., Vol. 75, pp.3138, 1999
[25] J. B. Webb, “Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy”, Appl. Phys. Lett., Vol. 75, pp.953, 1999
[26] Sten Heikman, “Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition”, Appl. Phys. Lett., Vol. 81, pp.439, 2002 |
[Endnote RIS 格式]
[相關文章]
[文章引用]
[完整記錄]
[館藏目錄]
[檢視]
plurk
funp
live
udn
HD
myshare
netvibes
friend
youpush
delicious
baidu
Google bookmarks
del.icio.us
hemidemi
facebook
twitter
google
reddit