參考文獻 |
[1] 饒瑞佶 and 方煒 and 李登華,「超高亮度發光二極體做為組培苗栽培人工光源之燈具製作與應用」,中國園藝,3, pp301-302, 2001
[2] 廖竑瑋,「小發散角的發光二極體照明器之設計」,國立交通大學光電工程研究所,碩士論文,pp.12,民國101年6月。
[3] T. A. EDISON, "Manufacture of filaments for incandescent electric lamps, "(US Patent 470, 925, 1892).
[4] C.-J. Weng, "Advanced thermal enhancement and management of LED packages,"International Communications in Heat and Mass Transfer 36,245-248 (2009)
[5] Schubert, E Fred, "Light-emitting diodes," (2018) E. Fred Schubert.
[6] H. J. Round, "A note on carborundum," Electrical world 49,309 (1970).
[7] N. Holonyak, and S. Bevacqua, "Coherent (visible) light emission from Ga (Asl- xPx) junctions," Applied Physics Letters 1,82-83 (1962).
[8] 藍光LED https://zh.wikipedia.org/wiki/藍光LED
[9] "Nobel Shocker: RCA Had the First Blue LED in 1972". IEEE Spectrum. October 9, 2014.
[10] "Oregon tech CEO says Nobel Prize in Physics overlooks the actual inventors". The Oregonian. October 16, 2014
[11] Major Business and Product Milestones 網際網路檔案館的存檔,存檔日期2011-04-13..Cree.com. Retrieved on March 16, 2012.
[12] H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, "Metalorganic vapor phase epitaxialGrowth of a high quality Gan film using an AlN buffer layer," Applied Physics Letters 48, 353 (1986)
[13] S. Nakamura, T. Mukai, and M. Senoh, "Candela-class high-brightness InGaN/AlGaNDouble-heterostructure blue-light-emitting diodes," Applied Physics Letters 64, 1687(1994)
[14] S. Nakamura, "The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes," Science 281, 956-961 (1998).
[15] J. Redwing, and M. A. Tischler, "High brightness electroluminescent device emitting inthe green to ultraviolet spectrum and method of making the same," (US Patent 5, 874, 747, 1999).
[16] F. Hide, P. Kozodoy, S. P. DenBaars, and A. J. Heeger, "White light from InGaN/conjugated polymer hybrid light-emitting diodes,"APPlied Physics Letters 70,2664-2666 (1997).
[17] L. Vriens, G. Acket, and C. Ronda, "UV/blue led-phosphor device with efficientConversion of UV/blues light to visible light," (US Patent 5,813,753, 1998).
[18] E. F. Schubert, and J. K. Kim, "Solid-state light sources getting smart," Science 308,1274-1278 (2005).
[19] Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, "White light emittingdiodes with super-high luminous efficacy," Journal of Physics D: Applied Physics 43,354002 (2010).
[20] M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, "Status and future of high-power light-emitting diodes for solid-state lighting," Display Technology, Journal of 3, 160-175 (2007).
[21] B. G. Streetman, and S. Banerjee, Solid state electronic devices (Prentice Hall, New Jersey,2000).
[22] A. Zukauakas, M. Shur, R. Gaska, Introduction to Solid-State Lighting, (John Wiley &Sons, New York, 2002).
[23] 蘇驊,“LED照明系統創新設計知易行難”,新電子2010年2月號。
[24] N. Narendran, and Y. Gu, "Life of LED-based white light sources," Display Technology, Journal of 1,167-171 (2005).
[25] Cree_Standards_Reglations.pdf
[26] N. Narendran, et. al., Journal of Crystal Growth , 268, pp452-454, 2004
[27] Nadarajah Narendran and Yimin Gu., IEEE/OSA Journal Of Display Technology , 1, Pp170, September 2005
[28] Matteo Meneghini, et. al., Microelectronics Reliability, 27 July (2011)
[29] C. Tsai, Y. Hsu, M. Chen, Y. Lo, Y. Lin, J. Kuang, H. Hu, S. Huang, C. Lee, and Y. Su, "Decay of radiation pattern and spectrum of hight-power LED modules in aging test," in IEEE Laser and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting Of the, (IEEE,2008),pp. 658-659.
[30] C.-C. Tsai,M.-H. Chen, Y.-C. Huang, Y.-C. Hsu, Y-T. Lo, Y.-J Lin, J.-H. Kuang, S.-B. Huang, H.-L. Hu, and Y.-I. Su, "Decay mechanisms of radiation pattern and optical spectrum of hight-power LED modules in aging test," Selected Topics in Quantum Electronics, IEEE Journal of 15, 1156-1162 (2009).
[31] M. Arik, and S. Weaver, "Chip-scale thermal management of high-brightness LED packages," in Optical Science and Technology, the Spie 49th Annual Meeting, (International Society for Optics and Photonics,2004),pp.214-223.
[32] Y. Gu, N. Narendran, and J. P. Freyssinier, "White LED performance," in Optical Science and Technology, the Spie 49th Annual Meeting, (International Society for Optics and Photonics, 2004),pp.119-124.
[33] Y. Xi, and E. Schubert, "Junction-temperature measurement in Gan ultraviolet Light-emitting diodes using diode forward voltage method," Applied Physics 85,2163 (2004).
[34] 世界上第一個電晶體居然是鍺做的,那麼矽又是怎麼成功「上位」的 https://kknews.cc/zh-tw/news/299nl5g.html
[35] 2013應用材料創新科技種子營學員讀物 https://webcache.googleusercontent.com/search?q=cache:ZEQeOg6ZGM0J:https://apps.nknush.kh.edu.tw/ZeroBB/Download%3Fupfileid%3D12707+&cd=1&hl=zh-TW&ct=clnk&gl=tw
[36] D. A. Neamen, Semiconductor Physics and Devices: Basic Principles 108 (McGraw-Hill, New York, 2003).
[37] E. Yablonovitch, "Photonic band-gap structures," in Confined Electrons and Photons "(Springer, 1995), pp. 885-898.
[38] D. A. Neamen, and B. Pevzner, Semiconductor physics and devices: basic principles (McGraw-Hill New York, 2003).
[39] L. E. Brus, "Electron-electron and electron-hole interactiona in small semiconductor crystallites: The size dependence of the lowest excited electronic state," The Journal of chemical physics 80,4403 (1984).
[40] S. Chhajed, Y. Xi, Y.-L. Li, T. Gessmann, and E. Schubert, "Influence of junctiontemperature on chromaticity and color-rendering properties of trichromatic white-lightsources based on light-emitting diodes," Journal of Applied Physics 97, 054506-054506-05408 (2005).
[41] Y. Gu, and N. Narendran, "A noncontact method for determining junction temperature of phosphor-converted white LEDs, " in Optical Science and Technology, SPIE’s 48th Annual Meeting, (International Society for Optics and Photonics, 2004),pp.107-114.
[42] J. Cho, C. Sone, Y. Park, and E. Yoon, "Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift, " physica status solidi(a) 202, 1869-1873 (2005).
[43] D. Hall, L. Goldberg, and D. Mehuys, "Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe, " Applied Physics Letters 61, 384-386 (1992).
[44] S. Todoroki, M. Sawai, and K. Aiki, cTemperature distribution along the spriped active region in high-power GaAlAs visible lasers, " Journal of Applied Physics 58, 1124-1128 (1985).
[45] W. B. Bridges, "Laser oscillation in singly ionized argon in the visible spectrum, " Applied Physics Letters 4, 128-130 (1964).
[46] A. D. McNaught, and A. Wilkinson, Compendium of chemical terminology (Blackwell Science Oxford, 1997).
[47] https://www.ies.org/product/electrical-and-photometric-measurements-of-solid-state-lighting-products/
[48] https://www.linkedin.com/pulse/led-tests-lm-79-lm-80tm-21-chun-ken
[49] Newport, Inc., https://www.newport.com/t/integrating-sphere-fundamentals-and-applications.
[50] https://www.ies.org/product/measuring-luminous-flux-and-color-maintenance-of-led-packages-arrays-and-modules/
[51] http://www.edison-opto.com.tw/files/doc/LM-80%20Test%20Report_4786297166-1a_v1.pdf
[52] https://www.ies.org/product/projecting-long-term-lumen-maintenance-of-led-light-sources/
[53] https://www.ledinside.com.tw/knowledge/20121016-23429.html
[54] Labsphere, inc., Duraflect reflectance coating, http://www.labsphere.com.cn/uploads/datasheets/duraflect-product-sheet.pdf.
[55] 周虹宇,「發光二極體發光光普特性之模型建立與維持穩定」,國立中央大學光電科學與工程學系,博士論文,民國100年11月。
[56] 紀詔元,「高功率LED光電熱色特性整合模型之研究」,國立中央大學光電科學與工程學系,碩士論文,民國101年6月。
[57] 唐健碩,「高功率LED光電熱色動態行為特性之研究」,國立中央大學光電科學與工程學系,碩士論文,民國103年1月。
[58] ProLight PK2N-3LxE-Rx, 3 W High CRI Power LED, Technical Datasheet, Version: 1.8 , http://www.prolightopto.com/upload/DS-0011_3W_PK2N-3LxE-Rx_v1.8.pdf
[59] ProLight PK2N-3LWE-SD, 3W High CRI Power LED, Technical Datasheet, Version: 1.8, http://www.prolightopto.com/upload/DS-0011_3W_PK2N-3LxE-Rx_v1.8.pdf
[60] ProLight PK2N-3LxE-SD, 3W Power LED, Technical Datasheet, Version: 1.6, http://www.prolightopto.com/upload/DS-0008_3W_PK2N-3LxE-SD_v1.6.pdf
[61] 台灣光電科技研討會暨國科會光電學門研究成果發表會, 國立清華大學台達館&旺宏館, December 2015. |