蕭特基能勢對矽電化學與光電效應之影響

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姓名

鄭霖(Lin Cheng) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

蕭特基能勢對矽電化學與光電效應之影響
(The effect of schottky baiirier on silicon electrochemical and photoelectric effect)

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摘要(中)

N型的多孔矽製作的共識是需要光照，由於N型半導體的主要載子是電子，在暗室中需要一些特殊裝置才可以生產N型多孔矽，例如利用磁場、側向電場、PN接面等。本實驗發現金屬與半導體接面所生成的以及半導體及液體接面所生成的的蕭特能障，能使電洞在電化學蝕刻中導向蝕刻液接面以進行多孔矽蝕刻，完成在無光源蝕刻N型多孔矽。此實驗中也同時探討可見光雷射對於蝕刻的影響，利用光電效應所產生的電子電洞對配合蕭特機能障的趨勢，使得加速表面的蝕刻，並且得到特殊的蝕刻表面結構。

摘要(英)

The common sense for the fabricating N-type porous silicon is that illumination is required. Since the major carrier in a N-type semiconductor is electrons, some special devices are needed in the dark room to produce N-type porous silicon, such as magnetic field, lateral electric field, PN junction, etc. In this experiment, it was found that the Schottky barrier formed by the junction of metal and N-type semiconductor and the junction of N-type semiconductor and HF electrolyte can drive holes to the silicon/electrolyte junction to perform an electrochemical etching. In this experiment, the effect of visible laser on the electrochemical etching is also discussed. The electron-holes generated by photo-electronic effect matches the Schottky barrier that accelerates the etching of the surface and obtains a special surface nanostructure.

關鍵字(中)

★ 多孔矽
★ 蕭特基能障
★ 光電化學蝕刻
★ 奈米晶體
★ 光致發光

關鍵字(英)

★ porous silicon
★ schottky barrier
★ photoelectrochemical
★ nanocrystal
★ photoluminescence

論文目次

目錄
摘要..............................................................................................................................i
Abstract........................................................................................................................ii
致謝............................................................................................................................iii
目錄............................................................................................................................iv
圖目錄.......................................................................................................................viii
表目錄.......................................................................................................................xii
第一章緒論................................................................................................................1
1-1 研究背景.......................................................................................................1
1-2 多孔矽製程....................................................................................................2
1-2-1乾式蝕刻.................................................................................................3
1-2-2 濕式蝕刻................................................................................................4
1-2-3 電化學蝕刻............................................................................................4
1-3多孔矽的應用................................................................................................5
1-3-1 ELTRANR................................................................................................5
1-4研究動機與目的...........................................................................................7
第二章原理與文獻回顧...........................................................................................9
2.1多孔矽理論模型...........................................................................................9
2-1-1貝爾模型................................................................................................9
2-1-2 量子模型..............................................................................................10
2-1-3 擴散限制模型......................................................................................10
2-2多孔矽形成機制..........................................................................................11
2-3 製作N型多孔矽........................................................................................13
2-3-1 光照法..................................................................................................13
2-3-2 霍爾效應法.........................................................................................14
2-3-3 PN接面法.............................................................................................14
2-4 光電效應......................................................................................................15
2-5蕭特基能勢...................................................................................................16
2-5-1蕭特基能障...........................................................................................16
2-5-2蕭特基能勢...........................................................................................18
第三章實驗方法與步驟..........................................................................................20
3-1試片清洗流程........................................................................................20
3-2實驗器材................................................................................................22
3-2-1雷射光源、偏振片、雷射功率計..............................................22
3-2-2電化學實驗器材............................................................................23
3-2-3實驗分析製備及檢測儀器...........................................................23
3-3實驗步驟................................................................................................25
3-3-1電化學蝕刻....................................................................................26
3-3-2光電化學蝕刻................................................................................27
第四章結果與討論..................................................................................................29
4-1宏觀尺度................................................................................................29
4-1-1電化學蝕刻....................................................................................29
4-1-2光電化學蝕刻................................................................................33
4-1-3電化學蝕刻及光電化學蝕刻比較..............................................37
4-2介觀及微觀尺度...................................................................................37
4-2-1電化學蝕刻....................................................................................37
4-2-1-1電化學俯視SEM照片...........................................................37
4-2-1-2電化學側視SEM照片...........................................................43
4-2-2光電化學蝕刻...............................................................................49
4-2-2-1光電化學俯視SEM照片.......................................................50
4-2-2-2光電化學側視SEM照片.......................................................55
4-2-3奈米晶粒........................................................................................59
4-3光譜分析................................................................................................61
4-3-1XRD....................................................................................................61
4-3-2光激發光光譜..................................................................................63
4-5N型矽晶生成多孔矽理論...................................................................65
4-6驗證理論...............................................................................................66
第五章結論................................................................................................................69
第六章參考文獻.......................................................................................................70
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參考文獻

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指導教授

李天錫(Tein-Hsi Lee)

審核日期

2018-7-20

推文