MOCVD行星式腔體之進氣系統創新設計及熱流分析

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姓名

薛峻岳(Jyun-Yue Syue) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

MOCVD行星式腔體之進氣系統創新設計及熱流分析

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摘要(中)

有機金屬化學氣相沉積法(Metal-Organic Chemical Vapor Deposition, MOCVD)為工業上製作半導體元件最重要的技術之一。而各個開發者之目標皆為透過對於MOCVD進氣系統進行改良，使腔體內可以獲得穩定的熱流場與良好的薄膜成長條件。本研究使用COMSOL Multiphysics軟體進行運算與分析，研究內容主要可分為兩個部分：第一部分為對於行星式腔體內部熱流場與質傳現象進行探討，並於探討腔體進氣系統前選取適當的製程參數，接著透過更改噴射器內部間隔板擺放方式來優化進氣系統流道，藉此提升晶圓上之薄膜成長速率；第二部分則為改善行星式腔體因顆粒堆積於晶圓自旋機構所造成之停機清理問題，藉由於腔體上壁增加噴流進氣口，可對於氣體流動過程中所消耗的TMG進行補充，進而提升晶圓末端之薄膜成長速率。此外，本研究亦透過檔板設計來解決晶圓前端位置薄膜成長速率過高之問題，最終可使晶圓在不自旋情況下即可獲得良好的薄膜成長速率與均勻性。

摘要(英)

Metal-Organic Chemical Vapor Deposition, MOCVD, is one of the most important technology to produce the Semiconductor device in the industry. The goals of all the developers are to get the stable thermal-flow field and great condition of depositing the thin film. The way to achieve the goals is to improve the original inlet system of MOCVD. In this study, the numerical software COMSOL was used to calculate and analyze the MOCVD system. In first part, the numerical method was applied to investigate the thermal-flow field and the phenomenon of the mass transfer inside the reactor. Besides, the numerical method was also applied to find the best range of the process parameter before this study start to investigate the inlet system. In the end, this study try to improve the growth rate by adjust the barrier inside the Injector. In second part, our goal is to overcome the issue of the accumulation inside the rotate component for the wafer. By adding the gas inlet on the top of the reactor, the flow can supply the TMG and improve the growth rate at the end of the wafer. In addition, this study also using the barrier to reduce the exorbitant growth rate at the front of the wafer. In the end, the new design can get the great growth rate and uniformity without the wafer rotate.

關鍵字(中)

★ 化學氣相沉積
★ 進氣設計
★ 數值模擬

關鍵字(英)

★ MOCVD reactor
★ simulation
★ inlet design

論文目次

摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VII
表目錄 XII
符號說明 XIII
第一章緒論 1
1.1前言 1
1.2 MOCVD簡介 3
1.2.1磊晶技術發展歷程 3
1.2.2磊晶技術簡介與比較 4
1.2.3 MOCVD磊晶機台簡介 7
1.3 MOCVD反應腔體與進氣系統種類 10
1.3.1垂直式反應腔體 10
1.3.2水平式反應腔體 12
1.3.3 結合水平與垂直進氣之反應腔體 13
1.4文獻回顧 17
1.5研究動機與內容 21
第二章基礎理論 22
2.1腔體內部熱流場與質傳理論 22
2.1.1腔體內部熱傳理論 22
2.1.2熱流場穩定性相關理論 23
2.1.3腔體內部質傳理論 25
2.2薄膜沉積理論 27
2.2.1薄膜反應機制 27
2.2.2反應氣體傳輸機制 28
2.2.3薄膜成長速率相關理論 30
2.3薄膜成長速率與均勻性計算 31
第三章數值模擬方法 34
3.1數值模擬軟體介紹 34
3.1.1 數值模擬軟體簡介 34
3.1.2有限元素法(Finite Element Method, FEM) 34
3.1.3求解方法 35
3.2幾何模型 37
3.3模擬基本假設與統御方程式 39
3.3.1基本假設 39
3.3.2統御方程式 39
3.4邊界條件 41
3.5混合氣體之物理性質 44
3.6數值模擬流程圖 46
3.7網格獨立分析 47
第四章結果與討論 53
4.1行星式腔體內部熱流場模擬分析與進氣系統探討 54
4.1.1進氣配比對於行星式腔體之影響 55
4.1.2進氣流率對於行星式腔體之影響 62
4.1.3腔體壓力對於行星式腔體之影響 70
4.1.4噴射器內部間隔板擺放方式對於行星式腔體之影響 79
4.1.5小結 88
4.2腔體上壁噴流裝置探討 89
4.2.1噴流進氣口排列方式對於腔體之影響 90
4.2.2不同入口狹縫數量對於腔體之影響 99
4.2.3入口前端檔板對於腔體之影響 105
4.2.4進氣流率對於新型腔體之影響 114
4.2.5載盤轉速對於新型腔體之影響 124
4.2.6小結 128
第五章結論 129
參考文獻 131

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指導教授

蕭述三(Shu-San Hsiau)

審核日期

2018-7-27

推文