| 參考文獻 |
[1] I. Vurgaftman and J. R. Meyer, Band parameters for III–V compound semiconductors and their alloys, J. Appl. Phys. 89, 5815 (2001)
[2] S. Strite*, M. E. Lin and H. Morkoq, Progress and prospects for GaN and the III-V nitride semiconductors, Thin Solid Films, 231 (1993)
[3] K. Kubota, Y. Kobayashi, and K. Fujimoto, Preparation and properties of III‐V nitride thin films, J. Appl. Phys. 66, 2984 (1989)
[4] N. Grandjean, J. Massies, and M. Leroux, Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers, Appl. Phys. Lett. 69, 2071 (1996)
[5]張育嘉,圖形化藍寶石基板應用於氮化鎵發光二極體之研究, 國立中央大學光 電科學研究所碩士論文,(2008)
[6] S. Yoshida, S. Misawa, and S. Gonda, Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates, Appl. Phys. Lett. 42, 427 (1983)
[7]游宏偉,蘇俊榮,張翼,磊晶成長砷化(銦)鎵通道層於矽基板上對高效率低耗能電晶體之應用, nano communication 25卷N0.1 (2018)
[8] S. A. Nikishin. et al. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, Appl. Phys. Lett. 75, 2073 (1999)
[9] F.Wu. et al. Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures, J. Appl. Phys.117, 155701 (2015)
[10] J. Bai and M. Dudley, Reduction of threading dislocation densities in AlN/sapphire epilayers driven by growth mode modification, Appl. Phys. Lett. 88, 051903 (2006)
[11] Kazumasa Hiramatsu, Epitaxial lateral overgrowth techniques used in group III nitride epitaxy, J. Phys. Condens. Matter 13,6961–6975 (2001)
[12] Nurul Diyanah Samsuri. et al. Synthesis methods of gold nanoparticles for Localized Surface Plasmon Resonance (LSPR) sensor applications, EPJ Web of Conferences 162, 01002 (2017)
[13]百科知識, 纖鋅礦結構圖https://www.easyatm.com.tw/wiki/%E7%BA%96%E9%8B%85%E7%A4%A6%E5%9E%8B%E7%B5%90%E6%A7%8B
[14] Ahmed Fadil. et al. Surface plasmon coupling dynamics in InGaN/GaN quantum-well structures and radiative efficiency improvement, scientific reports,
4 : 6392,(2014)
[15] 成功大學,陳品承,表面電漿增強奈米矽發光元件之發光效率研究(2009)
[16] Andriy Shevchenko et al. Optical wave parameters for spatially dispersive
and anisotropic nanomaterials, optic express,25(8),8005 (2017)
[17]吳民耀,劉威志,表面電漿子理論與模擬,物理雙月刊（廿八卷二期）(2006)
[18]蔡定平,金屬表面電漿簡介,物理雙月刊 (2006)
[19] Shuwen Zeng. et al. A Review on Functionalized Gold Nanoparticles
for Biosensing Applications, Plasmonics,6,491-506 (2011)
[20] Jean-Claude Tinguely, et al. Gold Nanoparticles for Plasmonic Biosensing: The Role of Metal Crystallinity and Nanoscale Roughness, BioNanoSci,1,128-135 (2011)
[21]黃凱麟,氮化物表面電漿生醫感測之理論分析, 國立中央大學光電科學與工程學系碩士論文(2016)
[22] Hana Tzu-Han Lin. et al. A Large-Area Nanoplasmonic Sensor Fabricated by
Rapid Thermal Annealing Treatment for Label-Free and Multi-Point Immunoglobulin Sensing, Nanomaterials, 7,100 (2017)
[23] K. Watanabe, Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN, Appl. Phys. Lett. 82, 718 (2003).
[24] 王凱弘,“多層氮化銦鎵/氮化鎵量子井光學特性之研究”,國立中山大
學電機工程學系研究所,碩士論文 (2003)
[25] 林坤宏’’不同量子井厚度下之氮化銦鎵/氮化鎵多層量子井光學與結構特性之研究’’義守大學, 電子工程學系,碩士論文 (2009)
[26] S. Mahanty. et al.V-shaped defects in InGaNrGaN multiquantum wells and radiative efficiency improvement, Mater. Lett. 41(1999)
[27] 柯宗憲,王德忠,盧廷昌,郭浩中,先進光電材料─非極性氮化鎵磊晶的發展,光連雙月刊,Vol. 69,頁51-55 (2007)
[28] Yulin Meng. et al. Red Emission of InGaN/GaN Multiple-Quantum-Well
Light-Emitting Diode Structures With Indium-Rich Clusters, Phys. Status Solidi A (2018)
[29] Chiao Yun Chang, et al. Boosting brightness with V-shaped pits (2015)
www.compoundsemiconductor.net
|
[Endnote RIS 格式]
[相關文章]
[文章引用]
[完整記錄]
[館藏目錄]
[檢視]
plurk
funp
live
udn
HD
myshare
netvibes
friend
youpush
delicious
baidu
Google bookmarks
del.icio.us
hemidemi
facebook
twitter
google
reddit