| 摘要(英) |
Metal organic chemical vapor deposition (MOCVD) is a source of reactants using precursors. The precursor is vaporized by a heater, and then transported by a carrier gas to generate a chemical reaction on the surface of the substrate, thereby forming a layer and a neat array. The densely packed film has become the main technology for producing large-size, composite semiconductor components. Therefore, in today′s diverse LED or semiconductor industries, the quality (non-uniformity, growth rate) of the grown film is more stringent.
This study will use the basic theoretical knowledge of the chemical mechanism and transport phenomena of GaN thin films to solve the factors affecting film quality (non uniformity, growth rate) by simulating software numerical values (including: length and diameter of the inlet, reactor pressure and rotational speed, etc.), respectively, to explore the relationship between process parameters and reactor geometry for film quality, and
analyze the chemical reactions, species transport and heat flow fields involved, and determine the parameters as control variables through the analysis results. The
optimization method ultimately found the optimal growth environment conditions for the GaN film.
Firstly, a steady-state model is established in which the reaction gases TMGa, NH3 and carrier gas H2 are mixed at the inlet, and the experimental results are compared with the experimental results. The relationship between the process parameters and the cavity geometry for the film quality can be known. The pressure, the intermediate inlet diameter and the inlet diameter have a significant influence on the non-uniformity and the growth rate. Therefore, it is decided to use these three parameters as the control variables. Finally, through the COMSOL simulation software and the Nelder-Mead algorithm-based optimization. Program integration to get the best value for the control variables. Non-uniformity decreased from 12.48% to 5.67%, film uniformity increased by 54%; growth rate decreased from 1.83 um/h to 1.52 um/h, and film growth rate decreased by 17%. Since the goal of optimization is to consider both the film uniformity and the growth rate, an optimum growth environment of the film is obtained on the overall objective function. |
| 參考文獻 |
[1]羅文雄, "半導體製造技術," 滄海圖書資訊股份有限公司, 2011.
[2]E.M.McCash,"Surface chmistry," 2001.
[3]Keunjoo Kim and Sam Kyu Noh," Reactor design rules for GaN epitaxial layer growths on sapphire in metal–organic chemical vapour deposition,"Vol 15,pp.868–874,May 2000.
[4]M. Dauelsberg,E.J. Thrush, B. Schineller,J.Kaeppeler," Technology of MOVPE Production Tools,"Elsevier Ltd,(2004)
[5]E Raj, Z Lisik, P Niedzielski, L Ruta, M Turczynski, X Wang, and A Waag,"Modelling of MOCVD Reactor: New 3D Approach," Journal of Physics, Vol 494,pp.211-215, 2014.
[6]Li Hui," Mass transport analysis of a showerhead MOCVD reactor," Journal of Semiconductors,Vol 32(3),March 2011.
[7] C.Theodoropoulos,T.J. Mountziaris, H.K. Moffat, J. Han," Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy,"Journal of Crystal Growth,vol. 217,pp. 65–81, 2000.
[8]D. Sengupta, S. Mazumder, W. Kuykendall, and S. A. Lowry," Combined ab initio quantum chemistry and computational fluid dynamics calculations for prediction of gallium nitride growth," Journal of Crystal Growth, vol. 279, pp. 369-382, 2005
[9]C. Martina , M. Dauelsberga, H. Protzmanna," Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor," Journal of Crystal Growth,vol 303 ,pp318–322,(2007)
[10] R.P. Pawlowski, C. Theodoropoulos, A.G. Salinger, T.J. Mountziaris,H.K. Moffat,J.N. Shadid, E.J. Thrush," Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design,"Journal of Crystal Growth,vol.221,pp.622–628, 2000.
[11] J.C. Hsieh,C.W. Cheng,T.F. Lin," Suppression of buoyancy-driven vortex flow resulting from a low speed jet impinging onto a heated disk in a vertical cylinder by cylinder top tilting," Journal of Heat and Mass Transfer,vol. 47,pp. 3031–3045, 2004.
[12] W.V. Lundin et. al," Effects of reactor pressure and residence time on GaN MOVPE growth efficiency," Journal of Crystal Growth,vol. 287,pp. 605–609, 2006.
[13] Jiandong Meng, Yogesh Jaluria," Numerical Simulation of GaN Growth in MOCVD Process," IMECE2011-63040, 2011.
[14] J. E. Dennis Jr.2 Daniel J. Woods3," Optimization on Microcomputers The NelderMead Simplex Algorithm1," Technical Report 85-9, December 1985
[15]S. Abedi et al," Integration of CFD and Nelder–Mead algorithm for optimization of MOCVD process in an atmospheric pressure vertical rotating disk reactor," International Communications in Heat and Mass Transfer 43 (2013) 138–145
[16]林瑤，「考量氣體分子吸附性質之 MOCVD 垂直反應腔體模擬分析」，國立中央大學，碩士論文，民國 104 年。
[17]林暐捷， 「MOCVD 行星式腔體之模型建立與傳輸現象分析」，國立中央大學，碩士論文，民國 107 年。
[18] K. Deb (2014) Multi-objective Optimization.In:Burke E., Kendall G. (eds) Search Methodologies.Springer, Boston, MA |
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