垂直式有機發光電晶體 之點矩陣式微米尺寸面板設計與製作

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姓名

邱盈蒼(Ying-Cang Qiu) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

垂直式有機發光電晶體之點矩陣式微米尺寸面板設計與製作
(Vertical Organic Light-emitting Transistors of the Micron Size Panel Design and Fabrication)

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摘要(中)

本論文以製作微米尺寸垂直式有機發光電晶體(Vertical organic light-emitting transistors, VOLETs)陣列為主，除了詳細說明8×8點矩陣式面板的設計與製作流程之外，還清楚解釋其背後原因。
透過原子層沉積(ALD)及曝光顯影等技術，製作出垂直式有機發光電晶體面板。使用ALD沉積高介電係數的三氧化二鋁與氧化鉿作為雙層介電層，並以ALD沉積N-type半導體材料氧化鋅，同時搭配綠光有機材料PFO:F8BT作為發光層。藉由顯影蝕刻方式將氧化鋅做微小圖案化，以達到單一像素尺寸最小可達到10μm×15μm的發光面積。透過光學微影技術，將每一道光罩圖案精準製作在元件上，使微小面積下有64個單一垂直式有機發光電晶體。同時發現電荷下注入式的垂直有機發光電晶體結構中，裸露出的氧化鋅面積與發光面積是一致的，利用此現象來定義發光面積。最後利用Arduino微控制器對面板進行驅動並成功發出10μm×15μm面積的綠光。

摘要(英)

In this thesis, micro-sized Vertical organic light-emitting transistors (VOLETs) arrays, in addition to explaining the design and manufacturing process of 8 × 8 dot matrix panel in detail, the reasons behind it are also explained clearly.
Through the technologies of atomic layer deposition (ALD) and exposure development, a vertical organic light-emitting transistor panel is fabricated. ALD was used to deposit aluminum oxide and hafnium oxide with a high dielectric constant as a double-layer dielectric layer, and ALD was used to deposit an N-type semiconductor material, zinc oxide, and a green organic material, PFO: F8BT, was used as a light-emitting layer. The zinc oxide is micro-patterned by a development etching method, so as to achieve a minimum light emitting area of a single pixel size of 10 μm × 15 μm. Through optical lithography technology, each photomask pattern is accurately fabricated on the substrate
, so that there are 64 cell of the vertical organic light-emitting transistors under the micro size area. At the same time, it was found that in the vertical organic light-emitting transistor structure of the downward injection type of charge, the area of the exposed zinc oxide and the light-emitting area are consistent, and this phenomenon is used to define the light-emitting area. Finally, the panel is driven by an Arduino microcontroller and a 10μm × 15μm area is successfully radiant green light.

關鍵字(中)

★ 垂直式有機電晶體
★ 垂直式有機發光電晶體
★ 高介電常數介電層
★ 面板設計
★ 微影製程

關鍵字(英)

★ Vertical Organic Transistors
★ Vertical Organic Light-emitting Transistors
★ High-k Dielectric Layer
★ Panel Design
★ photolithography

論文目次

摘要 I
Abstract II
目錄 III
圖表目錄 VI
第一章緒論 1
1-1 前言 1
1-2 傳統有機薄膜電晶體 2
1-3 蕭特基基底垂直電晶體 4
1-4 有機發光二極體顯示器 10
1-5 研究目的與動機 11
第二章基本理論 12
2-1 垂直式電晶體之工作原理 12
2-1-1 垂直式電晶體-關狀態操作機制 14
2-1-2 垂直式電晶體-開狀態操作機制 17
2-1-3 垂直式電晶體-轉換特性曲線與開/關電流比 20
2-2 有機發光二極體之工作原理 21
第三章元件材料與實驗儀器 24
3-1 介電層材料 25
3-1-1 三氧化二鋁 25
3-1-2 二氧化鉿 26
3-1-3 雙層介電層 28
3-1-4 有機發光層材料介紹 29
3-1-5 金屬電極材料與能階 30
3-2 實驗儀器 31
3-2-1 原子層沉積(Atomic Layer Deposition, ALD) 31
3-2-2 熱蒸鍍機(Thermal Evaporation Coater) 37
3-2-3 阻抗分析儀(LF Impedepance Analyzer) 38
3-2-4 手套箱(Glove Box) 39
3-2-5 旋轉塗佈機(Spin Coater) 40
3-2-6 紫外光/可見光譜儀(Ultraviolet-Visible Spectroscopy) 40
3-2-7 紫外光臭氧清洗機(UV-Ozone) 41
3-2-8 表面輪廓儀(Alpha-Step profile meter) 41
3-2-9 半導體參數分析儀(Semiconductor Parameter Analyzer,
SPA) 42
3-2-10 手動光罩對準曝光儀(Mask and Bond Aligner) 43
3-2-11 Arduino Uno開發板 44
第四章實驗方法 46
4-1 氧化銦錫(ITO)導電膜玻璃圖案設計 46
4-2 定義金屬膜對準鑰匙(Alignment key) 49
4-3 氧化銦錫(ITO)導電膜玻璃圖案蝕刻 55
4-4 ALD製作雙層介電層與半導體層 58
4-5 氧化鋅半導體層圖案蝕刻 59
4-6 定義金屬源極區域 62
4-7 源極絕緣層氧化矽(SiOx)鍍製 68
4-8 倒置結構有機發光二極體之陣列製程 71
第五章結果與討論 75
5-1 高電容密度雙層介電層 75
5-2 點矩陣式微米尺寸面板之光罩設計 77
5-2-1 定義金屬膜對準鑰匙(Alignment key)圖案之光罩設計 77
5-2-2 定義氧化銦錫(ITO)圖案之光罩設計 78
5-2-3 定義半導體層圖案之光罩設計 81
5-2-4 定義金屬源極圖案之光罩設計 82
5-2-5 定義金屬源極絕緣層圖案之光罩設計 83
5-2-6 定義金屬共汲極圖案之金屬遮罩設計 84
5-2-7 點矩陣式微米尺寸面板製作總結 85
5-3 點矩陣式面板程序控制 86
5-4 點矩陣式微米尺寸面板量測方法與結果 92
第六章結論與未來展望 96
參考文獻 97

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指導教授

張瑞芬(Jui-Fen Chang)

審核日期

2020-1-7

推文