退火Ge薄膜的性能研究

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姓名

陳妙美(Tran Dieu My) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

退火Ge薄膜的性能研究
(Research on the properties of the annealed Ge thin films)

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摘要(中)

由於高效率III-V族太陽能電池的性能優越，近來受到廣泛注意。而晶格匹配的基板在太陽能電池製造中被認為是非常重要的。本研究在Si基板上成長Ge磊晶薄膜，作為製造高效率III-V族太陽能電池的虛擬鍺基板。我們使用的兩種主要方法是射頻磁控濺射和迴圈熱退火。在Si基板上利用射頻磁控濺射沉積鍺磊晶薄膜與其它技術相比具有成本低的優點，也是一種安全的製造方法。為了降低螺紋狀差排密度（TDD）和減少缺陷，在Si表面沉積Ge磊晶薄膜後進行迴圈熱退火。由於Si和Ge在熱膨脹係數上的不匹配，退火後Ge薄膜的平面應力由壓縮變為拉伸。然後，我們將利用X光繞射（XRD）、拉曼光譜、原子力顯微鏡（AFM）和掃描電子顯微鏡（SEM）分析迴圈退火的影響以及TDD的還原機制。

摘要(英)

III-V solar cells are becoming more widely known for their high efficiency and performance. Hence, a lattice - matched substrate is considered very important in their manufacturing. In this thesis, Ge epitaxial films on Si substrates are used as a virtual Ge substrate to manufacture highly efficient III-V solar cells. The two main methods employed are RF magnetron sputtering and cyclic thermal annealing. Ge epitaxial film will be deposited on the Si substrate via the RF magnetron sputtering method due to its lower cost and safety. Cycle thermal annealing is carried out after the deposition of Ge film on Si with the aim of reducing the threading dislocation density (TDD) and defects. Due to the mismatch between Si and Ge in terms of the thermal expansion coefficient, after the annealing process, the plane strain of the Ge film will be changed from compression to tension. We analyzed the effects of the cycle annealing as well as the TDD reduction mechanism via X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), and scanning electron microscopy (SEM).

關鍵字(中)

★ 虛擬鍺基板
★ III-V族太陽能電池
★ 射頻磁控濺射
★ 迴圈熱退火

關鍵字(英)

★ Virtual Germanium Substrate
★ III-V solar cell
★ RF Magnetron Sputtering
★ Cycle Thermal annealing

論文目次

ABSTRACT I
ACKNOWLEDGEMENT III
Table of Content IV
List of Figures VI
List of Tables VIII
List of Abbreviations IX
CHAPTER 1 - INTRODUCTION 1
1.1. Introduction 1
1.2. Motivations 1
1.3. Purpose and method 2
CHAPTER 2 - PRINCIPLES 5
2.1. Material lattice constant 5
2.1.1. Material characteristics 5
2.1.2. Lattice dislocations 6
2.2. Thin films fabrication 9
2.2.1. Thin film structure 9
2.2.2. Surface properties 9
2.2.3. Deposition 10
2.2.4. Sputtering 10
2.3. Annealing principle 15
CHAPTER 3 - EXPERIMENTS 17
3.1. Experiment step 17
3.2. Device operation 18
3.2.1. Atomic force microscope (AFM) 18
3.2.2. Raman system 20
3.2.3. X-ray diffractometer 23
3.2.4. Annealing System 25
3.2.5. Cluster sputter system 25
3.2.6. Scanning electron microscopy 27
CHAPTER 4 – RESULTS AND DISCUSSION 29
4.1. Annealing temperature 29
4.2. Annealing time 45
4.3. Annealing cycle 57
CHAPTER 5 - CONCLUSION 63
REFERENCE 64

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指導教授

陳昇暉(Chen, Sheng-Hui)

審核日期

2020-1-17

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