具備簡單垂直共振腔的紫外光發光二極體

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姓名

宋俊毅(Jun-Yi Song) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

具備簡單垂直共振腔的紫外光發光二極體
(The Ultraviolet Light Emitting Diode with a Simple Vertical Cavity)

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摘要(中)

共振腔發光二極體(Resonant Cavity Light emitting Diodes, RCLED)是一種介於面射型雷射(Vertical Cavity Surface Emitting Laser, VCSEL)與發光二極體(Light-Emitting Diode, LED)之間的特別元件。相較於LED，RCLED有更好的方向性、光譜純度和溫度可靠性，也有更高的光萃取效率和調制帶寬。

為了形成共振腔，在 RCLED 的上、下介面，通常需要高反射率的分散式布拉格反射 (distributed Bragg reflector, DBR) 結構，才能在元件表面發出半高寬極窄(< 10 nm)的光訊號。目前與 RCLED 相關的文獻，多為可見光範圍的研究結果，紫外光 RCLED 由於磊晶、製成難度較高，相關文獻較少，電激發的紫外光 RCLED 就更少了。

本研究利用簡單的磊晶、製程步驟，在藍寶石基板上成長氮化鋁鎵 (AlGaN) 量子井，並利用空氣分別與氮化鎵(GaN)、藍寶石形成的介面，作為元件的共振腔，最後在磊晶片表面得到波長 340 nm 的RCLED。雖然操作電壓高達70 V，且光譜也出現明顯的缺陷光，但此種新式的 RCLED 結構，可大幅簡化磊晶、製程步驟，有潛力提升深紫外光LED的發光效率。

摘要(英)

Resonant Cavity Light emitting Diodes (RCLED) can be regarded as the combination of Vertical Cavity Surface Emitting Laser (VCSEL) and Light-Emitting Diode (LED). It has the advantages of LED and VCSEL. Comparing with the typical LED, RCLED has higher power, efficiency and modulation bandwidth, as well as better directionality, spectral purity and temperature reliability. In order to form the resonant cavity, RCLED often requires highly reflective upper and bottom interfaces, like distributed Bragg reflector (DBR), to enable the surface emission peak with narrow full width at half maximum. Most of the relevant literatures focus on the research results of visible RCLEDs. The results on ultraviolet (UV) RCLEDs, particularly by electrical-pumping, are scarcely found because of the challenges in growth and fabrication.

In this study, we attained an electrical-pumping RCLED spectrum with the peaks centering at 340 nm, without resorting to the DBR interfaces. Although the spectrum comes with a high bias of 70 V and noticeable impurity emission, this unique UV RCLED greatly simplifies the growth/fabrication processes, benefiting the development of UV emitters.

關鍵字(中)

★ 二極體
★ 共振腔
★ 紫外光

關鍵字(英)

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 v
一、緒論 1
1-1 深紫外光簡介 1
1-2 三五族半導體雷射的原理及應用 1
1-2-1 DUV-LED 2
1-2-2 RC-LED與共振腔的工作原理 5
1-3 研究動機與論文架構 10
二、實驗儀器與方法 11
2-1 MOCVD磊晶 11
2-2 黃光微影製程 13
2-3 EL量測 18
三、討論與分析 20
3-1 不同結構對光譜的影響 20
3-2 不同金屬電極的IV特性曲線 24
3-3 不同金屬電極對EL強度的影響 27
四、結論與未來展望 32
4-1 結論 32
4-2 未來展望 33
參考文獻 34

圖目錄
▲圖 1.1 紫外光的應用[5] 1
▲圖 1.2 UV-LED的應用[1] 2
▲圖 1.3 紫外光波段的外部量子效率[1] 2
▲圖 1.4 面射型雷射二極體[25] 4
▲圖 1.5 一般VCSEL的製作過程[22] 4
▲圖 1.6 典型RC-LED架構圖[26] 5
▲圖 1.7 建設性干涉與破壞性干涉[32] 6
▲圖 1.8 光學共振腔[38] 7
▲圖 1.9 對稱共振腔中穿透率與反射率的關係[38] 9
▲圖 1.10 光模態與激發光光譜[37] 9
▲圖 2.1 Aixtron200 RF/4 MOCVD系統 11
▲圖 2.2 Aixtron200 RF/4 MOCVD水平腔體式系統的架構 12
▲圖 2.3 基本的黃光微影製程 13
▲圖 2.4 磊晶完後的兩吋片子 14
▲圖 2.5 切割後的小片子 14
▲圖 2.6 旋轉塗布機 14
▲圖 2.7 曝光機 15
▲圖 2.8 高真空電子束暨熱阻式蒸鍍機 16
▲圖 2.9 相隔兩個電極的間距和尺寸 16
▲圖 2.10 快速退火爐 17
▲圖 2.11 退火後的成品 17
▲圖 2.12 EL量測系統示意圖 18
▲圖 2.13 EL量測1 19
▲圖 2.14 EL量測2 19
▲圖 3.1 編號5477的結構 20
▲圖 3.2 編號5484的結構 21
▲圖 3.3 編號5477的EL光譜圖 22
▲圖 3.4 編號5484的EL光譜圖 22
▲圖 3.5 功函數小的金屬和半導體接觸前後的情況[41] 24
▲圖 3.6 功函數大的金屬和半導體接觸前後的情況[41] 24
▲圖 3.7 Ni/Au退火後的結果[44] 25
▲圖 3.8 Ni/Au和Ni/Al的IV特性曲線 26
▲圖 3.9 Ni/Al中的Ni厚度15nm和25nm的IV特性曲線 27
▲圖 3.10 電極鍍Au和Al的波長對EL強度的比較 28
▲圖 3.11 Ni/Au的光譜隨電壓的變化 29
▲圖 3.12 Ni/Al的光譜隨電壓的變化 29
▲圖 3.13 各種金屬反射率對波長的關係[49] 30
▲圖 3.14 Ni/Au在短波長的光譜 31
▲圖 3.15 Ni/Al在短波長的光譜 31

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指導教授

賴昆佑(Kun-Yu Lai)

審核日期

2021-7-21

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