摘要(英) |
Silicon carbide, with stable chemical properties, will not react with almost any substance at room temperature, whereas chemical etching is usually performed at high temperature, which increases the manufacturing cost. In this experiment, electrochemical etching of silicon carbide (4H-SiC) was carried out at room temperature with an etching solution of hydrofluoric acid (HF) and alcohol (C2H5OH) with a volume ratio of 1:1.
In this study, we observed the relationship between the difference in etching rate at different currents and the films produced after etching. The relationship between the etched films and the etched films was observed by Transmission and scanning electron microscopy (TEM & SEM), and by X-ray diffraction (XRD), Raman spectroscopy (Raman) and energy dispersive X-ray spectroscopy (EDS). The difference in roughness between the etched film and the original specimen was scanned by AFM. The results showed that as the current increased, the film generation time shortened and the thickness of film increased, which indicate that the thickness of the silicon carbide substrate thinned in a relatively short period of time as the current increased. |
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